Method of manufacturing a semiconductor device

• US 20050106874A1
• Filed: 09/08/2004
• Published: 05/19/2005
• Est. Priority Date: 09/12/2003
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Matsui, Yukiteru, Yano, Hiroyuki, Minamihaba, Gaku, Shigeta, Atsushi
• Granted Patent: US 7,700,489 B2
• Time in Patent Office: Days
• US Class Current: 438/689
• CPC Class Codes: C09G 1/02 containing abrasives or grinding agents abrasives as such C09K3/14; polishing of semi-conductors H01L
• CPC Class Codes: H01L 21/31053 involving a dielectric removal step
• CPC Class Codes: H01L 21/31058 of organic layers

Abstract

A method of manufacturing a semiconductor device includes depositing a SiO₂ film on the substrate having formed thereon a wiring pattern; coating a SOG film on the SiO₂ film; and polishing the SOG film using a slurry containing cerium oxide and cationic surfactant with a chemical-mechanical polishing process.

Claims

1. A method of manufacturing a semiconductor device, comprising:

depositing a SiO₂ film on a substrate having a wiring pattern thereon;

coating a Spin on glass film on the SiO₂ film; and

polishing the Spin on glass film using slurry containing cerium oxide and cationic surfactant with a chemical-mechanical polishing process.

2. The method of claim 1, wherein the SiO₂ film is formed from a tetraethoxysilane.

3. The method of claim 1, wherein the Spin on glass is formed from a methyl silsesquioxane.

4. The method of claim 1, wherein the pH value of the slurry is 8 or less.

5. The method of claim 1, wherein the concentration of the cationic surfactant contained in the slurry is in a range of from 0.01 mass % inclusive to 10 mass % inclusive.

6. The method of claim 1, wherein the cationic surfactant contained in the slurry contains a quaternary amrumonium salt.

7. The method of claim 1, wherein the hydrophobic part of the cationic surfactant contained in the slurry is an oligomer or polymer having the mass average molecular weight of 500 or more.

8. The method of claim 1, wherein the polishing is executed, using a polishing pad having an elastic modulus in compression in a range of from 100 MPa and above to 600 MPa, while the substrate and the polishing pad are moved relative to each other.

9. The method of claim 1, wherein the polishing is executed, with the relative speed of the substrate to a polishing pad being in a range from 0.5 m/sec and above to 2.5 m/sec, while the substrate and polishing pad are moved relative to each other.

10. The method of claim 1, wherein the polishing is executed, with a pressure of the substrate with respect to a polishing pad being in a range from 200 gf/cm² and above to 700 gf/cm², while the substrate and polishing pad are moved relative to each other.

11. The method of claim 1, wherein the slurry further contains a second surfactant such that the contact angle with respect to the Spin on glass film is less than 60 degrees.

12. The method of claim 11, wherein the second surfactant is at least one of acetylenediol-based nonionic surfactant or silicon-based nonionic surfactant.

13. The method of claim 11, wherein the concentration of the second surfactant in the slurry is in a range from 0.01 mass % inclusive to 10 mass % inclusive,

14. The method of manufacturing a semiconductor device, comprising:

depositing a SiO₂ film on the substrate having a wiring pattern thereon; and

polishing the SiO₂ film, using slurry containing cerium oxide and a cationic surfactant such that the hydrophobic part of the surfactant is an oligomer or polymer having a mass average molecular weight of 500 or more, with a chemical-mechanical polishing process.

15. The method of claim 14, wherein the SiO₂ film is formed from a tetraethoxysilane.

16. The method of claim 14, wherein the pH value of the slurry is 8 or less.

17. The method of claim 14, wherein the concentration of the cationic surfactant contained in the slurry is from 0.01 mass % inclusive to 10 mass % inclusive.

18. The method of claim 14, wherein the cationic surfactant contained in the slurry contains quaternary ammonium salt.

19. The method of claim 14, wherein the polishing is executed, using a polishing pad having an elastic modulus in compression in a range of from 100 MPa and above to 600 MPa, while the substrate and the polishing pad are moved relative to each other.

20. The method of claim 14, wherein the polishing is executed, with the relative speed of the substrate to a polishing pad being from 0.5 m/sec and above to 2.5 m/sec, while the substrate and polishing pad are moved relative to each other.

21. The method of claim 14, wherein the polishing is executed, with a pressure of the substrate with respect to a polishing pad being in a range from 200 gf/cm² and above to 700 gf/cm², while the substrate and polishing pad are moved relative to each other.