Surface wave excitation plasma CVD system
First Claim
1. A surface wave excitation plasma CVD system which introduces microwaves via a dielectric member into a plasma processing chamber, generates surface waves of the microwaves, generates a surface wave excitation plasma by exciting a gas in the plasma processing chamber with the surface waves and deposits a silicon compound upon a substrate with the surface wave excitation plasma, comprising:
- a material gas feeding device which feeds a material gas including silicon element into the plasma processing chamber from a gas feed aperture; and
a process gas feeding device which feeds a process gas which causes chemical reactions to occur to the material gas upon activation by the surface wave excitation plasma into the plasma processing chamber from a gas feed aperture which is provided as separated from the gas feed aperture of the material gas feeding device.
2 Assignments
0 Petitions
Accused Products
Abstract
This surface wave excitation plasma CVD system, along with feeding a material gas including silicon element by feeding the material gas into a chamber 1 from at least one of an upper surface gas introduction conduit and a side surface gas introduction conduit, also activates the material gas with a surface wave excitation plasma and feeds a process gas which initiates chemical reactions within the material gas into the chamber 1 from a process gas introduction conduit 5. A gas feed aperture of the upper surface gas introduction conduit and/or the side surface gas introduction conduit is provided in a position which is closer to the substrate than the gas feed aperture of the process gas introduction conduit.
126 Citations
20 Claims
-
1. A surface wave excitation plasma CVD system which introduces microwaves via a dielectric member into a plasma processing chamber, generates surface waves of the microwaves, generates a surface wave excitation plasma by exciting a gas in the plasma processing chamber with the surface waves and deposits a silicon compound upon a substrate with the surface wave excitation plasma, comprising:
-
a material gas feeding device which feeds a material gas including silicon element into the plasma processing chamber from a gas feed aperture; and
a process gas feeding device which feeds a process gas which causes chemical reactions to occur to the material gas upon activation by the surface wave excitation plasma into the plasma processing chamber from a gas feed aperture which is provided as separated from the gas feed aperture of the material gas feeding device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
-
Specification
-
- Resources
-
Current AssigneeShimadzu Corporation
-
Original AssigneeShimadzu Corporation
-
InventorsSuzuki, Masayasu
-
Granted Patent
-
Time in Patent OfficeDays
-
Field of Search
-
US Class Current118/723.MW
-
CPC Class CodesC23C 16/45508 Radial flowC23C 16/45563 Gas nozzlesC23C 16/45565 Shower nozzlesC23C 16/45589 Movable means, e.g. fansC23C 16/511 using microwave discharges
