×

On-wafer electrochemical deposition plating metrology process and apparatus

  • US 20050109624A1
  • Filed: 11/25/2003
  • Published: 05/26/2005
  • Est. Priority Date: 11/25/2003
  • Status: Abandoned Application
First Claim
Patent Images

1. A method of controlling copper electrochemical deposition in an electrochemical deposition system in which a wafer is contacted with an electrochemical deposition medium including at least one organic additive, wherein the electrochemical deposition medium has a plating anode in contact therewith to effect plating of copper on the wafer, and the electrochemical deposition is characterizable by at least one dependent variable correlative of efficacy of the copper electrochemical deposition, said method comprising:

  • selecting at least one dependent variable correlative of efficacy of the copper electrochemical deposition;

    performing a regression analysis or multivariate calibration modeling of the copper electrochemical deposition utilizing a wafer-based independent variable to generate a dependent variable equation for each selected dependent variable correlative of efficacy of the copper electrochemical deposition;

    solving the dependent variable equation for each selected dependent variable correlative of efficacy of the copper electrochemical deposition, by regression analysis, to yield a solution value for each selected dependent variable; and

    modulating the copper electrochemical deposition in response to the solution value for each selected dependent variable.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×