On-wafer electrochemical deposition plating metrology process and apparatus
First Claim
1. A method of controlling copper electrochemical deposition in an electrochemical deposition system in which a wafer is contacted with an electrochemical deposition medium including at least one organic additive, wherein the electrochemical deposition medium has a plating anode in contact therewith to effect plating of copper on the wafer, and the electrochemical deposition is characterizable by at least one dependent variable correlative of efficacy of the copper electrochemical deposition, said method comprising:
- selecting at least one dependent variable correlative of efficacy of the copper electrochemical deposition;
performing a regression analysis or multivariate calibration modeling of the copper electrochemical deposition utilizing a wafer-based independent variable to generate a dependent variable equation for each selected dependent variable correlative of efficacy of the copper electrochemical deposition;
solving the dependent variable equation for each selected dependent variable correlative of efficacy of the copper electrochemical deposition, by regression analysis, to yield a solution value for each selected dependent variable; and
modulating the copper electrochemical deposition in response to the solution value for each selected dependent variable.
1 Assignment
0 Petitions
Accused Products
Abstract
Electrochemical deposition (ECD) processes and systems used in the fabrication of products such as semiconductor devices, and more specifically an on-wafer process and apparatus of such type, in which the workpiece being plated is utilized as an electrode element in the monitoring operation, thereby substantially simplying the analytical monitoring metrology of ECD operation. The invention is usefully employed in copper electrodeposition involving control of organic additives concentrations in the copper plating bath, to achieve highly efficient copper metalizing of wafer substrates.
-
Citations
30 Claims
-
1. A method of controlling copper electrochemical deposition in an electrochemical deposition system in which a wafer is contacted with an electrochemical deposition medium including at least one organic additive, wherein the electrochemical deposition medium has a plating anode in contact therewith to effect plating of copper on the wafer, and the electrochemical deposition is characterizable by at least one dependent variable correlative of efficacy of the copper electrochemical deposition, said method comprising:
-
selecting at least one dependent variable correlative of efficacy of the copper electrochemical deposition;
performing a regression analysis or multivariate calibration modeling of the copper electrochemical deposition utilizing a wafer-based independent variable to generate a dependent variable equation for each selected dependent variable correlative of efficacy of the copper electrochemical deposition;
solving the dependent variable equation for each selected dependent variable correlative of efficacy of the copper electrochemical deposition, by regression analysis, to yield a solution value for each selected dependent variable; and
modulating the copper electrochemical deposition in response to the solution value for each selected dependent variable. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
-
-
14. Apparatus for controlling copper electrochemical deposition in an electrochemical deposition system in which a wafer is contacted with an electrochemical deposition medium including at least one organic additive, wherein the electrochemical deposition medium has a plating anode in contact therewith to effect plating of copper on the wafer, and the electrochemical deposition is characterizable by at least one dependent variable correlative of efficacy of the copper electrochemical deposition, said apparatus comprising:
a computational module constructed and arranged to perform the following steps;
selecting at least one dependent variable correlative of efficacy of the copper electrochemical deposition;
performing a regression analysis or multivariate calibration modeling of the copper electrochemical deposition utilizing a wafer-based independent variable to generate a dependent variable equation for each selected dependent variable correlative of efficacy of the copper electrochemical deposition; and
solving the dependent variable equation for each selected dependent variable correlative of efficacy of the copper electrochemical deposition, by regression analysis, to yield a solution value for each selected dependent variable; and
means for modulating the copper electrochemical deposition in response to the solution value for each selected dependent variable. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30)
Specification