Photoelectric conversion apparatus and image pickup system using photoelectric conversion apparatus

• US 20050110002A1
• Filed: 11/15/2004
• Published: 05/26/2005
• Est. Priority Date: 11/25/2003
• Status: Active Grant

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Noda, Tomoyuki
• Granted Patent: US 7,518,096 B2
• Time in Patent Office: Days
• US Class Current: 257/21
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 27/1462 Coatings
• CPC Class Codes: H01L 27/14621 Colour filter arrangements
• CPC Class Codes: H01L 27/14625 Optical elements or arrangements associated with the device
• CPC Class Codes: H01L 27/14627 Microlenses
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers
• CPC Class Codes: H01L 31/02161 for devices characterised by at least one potential jump barrier or surface barrier
• CPC Class Codes: H01L 31/02162 for filtering or shielding light, e.g. multicolour filters for photodetectors

Abstract

It is a main object of the present invention to suppress the differences of color ratios of B/G and R/G when the film thicknesses of antireflective films and insulation films vary at a processing process. The present invention is a photoelectric conversion apparatus including a plurality of light receiving portions arranged on a semiconductor substrate, antireflective films formed on the light receiving portions with insulation films put between them, and color filter layers of a plurality of colors formed on the antireflective films, wherein film thicknesses of the insulation films and/or the antireflective films are changed such that changing directions of spectral transmittances at peak wavelengths of color filters on sides of the shortest wavelengths and at peak wavelengths of color filters on sides of the longest wavelengths after transmission of infrared cutting filters may be the same before and after changes.

Claims

1. A photoelectric conversion apparatus comprising a plurality of light receiving portions arranged on a semiconductor substrate, antireflective films formed on said light receiving portions, and color filter layers of a plurality of colors, said color filter layers formed on said antireflective films, wherein film thicknesses of said antireflective films are set such that changing directions of spectral transmittances at peak wavelengths of color filters on sides of the shortest wavelengths and at peak wavelengths of color filters on sides of the longest wavelengths are the same before and after changing the film thicknesses.

2. A photoelectric conversion apparatus according to claim 1, wherein an insulation film is formed between each of said light receiving portions and each of said antireflective films.

3. A photoelectric conversion apparatus according to claim 1, wherein said color filters on the sides of the shortest wavelengths are blue and said color filters on the sides of the longest wavelengths are red.

4. A photoelectric conversion apparatus according to claim 2, wherein said insulation films are made of silicon oxide films and said antireflective films are made of silicon nitride films.

5. A photoelectric conversion apparatus according to claim 2, wherein said insulation films are made of silicon oxide films and said antireflective films are made of silicon oxynitride films.

9. An image pickup system comprising a photoelectric conversion apparatus according to any one of claims 1, 6 and 7, an optical system for focusing light on said photoelectric conversion apparatus, and a signal processing circuit for processing an output signal from said photoelectric conversion apparatus.

6. A photoelectric conversion apparatus comprising a plurality of light receiving portions arranged on a semiconductor substrate, antireflective films formed on said light receiving portions, and color filter layers of a plurality of colors, said color filter layers formed on said antireflective films, wherein said antireflective films are severally made of a silicon nitride film having a film thickness within a range from 25 nm to 40 nm, and silicon oxide films each having a film thickness of 8 nm or less are formed between said light receiving portions and said antireflective films.

8. A photoelectric conversion apparatus according to claim 6 or 7, wherein said color filters on the sides of the shortest wavelengths are blue and said color filters on the sides of the longest wavelengths are red.

7. A photoelectric conversion apparatus comprising a plurality of light receiving portions arranged on a semiconductor substrate, antireflective films formed on said light receiving portions, and color filter layers of a plurality of colors, said color filter layers formed on said antireflective films, wherein said antireflective films are severally made of a silicon oxynitride film having a film thickness within a range from 40 nm to 60 nm, and silicon oxide films each having a film thickness of 8 nm or less are formed between said light receiving portions and said antireflective films.