Photoelectric conversion apparatus and image pickup system using photoelectric conversion apparatus
First Claim
1. A photoelectric conversion apparatus comprising a plurality of light receiving portions arranged on a semiconductor substrate, antireflective films formed on said light receiving portions, and color filter layers of a plurality of colors, said color filter layers formed on said antireflective films, wherein film thicknesses of said antireflective films are set such that changing directions of spectral transmittances at peak wavelengths of color filters on sides of the shortest wavelengths and at peak wavelengths of color filters on sides of the longest wavelengths are the same before and after changing the film thicknesses.
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Abstract
It is a main object of the present invention to suppress the differences of color ratios of B/G and R/G when the film thicknesses of antireflective films and insulation films vary at a processing process. The present invention is a photoelectric conversion apparatus including a plurality of light receiving portions arranged on a semiconductor substrate, antireflective films formed on the light receiving portions with insulation films put between them, and color filter layers of a plurality of colors formed on the antireflective films, wherein film thicknesses of the insulation films and/or the antireflective films are changed such that changing directions of spectral transmittances at peak wavelengths of color filters on sides of the shortest wavelengths and at peak wavelengths of color filters on sides of the longest wavelengths after transmission of infrared cutting filters may be the same before and after changes.
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Citations
9 Claims
- 1. A photoelectric conversion apparatus comprising a plurality of light receiving portions arranged on a semiconductor substrate, antireflective films formed on said light receiving portions, and color filter layers of a plurality of colors, said color filter layers formed on said antireflective films, wherein film thicknesses of said antireflective films are set such that changing directions of spectral transmittances at peak wavelengths of color filters on sides of the shortest wavelengths and at peak wavelengths of color filters on sides of the longest wavelengths are the same before and after changing the film thicknesses.
- 6. A photoelectric conversion apparatus comprising a plurality of light receiving portions arranged on a semiconductor substrate, antireflective films formed on said light receiving portions, and color filter layers of a plurality of colors, said color filter layers formed on said antireflective films, wherein said antireflective films are severally made of a silicon nitride film having a film thickness within a range from 25 nm to 40 nm, and silicon oxide films each having a film thickness of 8 nm or less are formed between said light receiving portions and said antireflective films.
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7. A photoelectric conversion apparatus comprising a plurality of light receiving portions arranged on a semiconductor substrate, antireflective films formed on said light receiving portions, and color filter layers of a plurality of colors, said color filter layers formed on said antireflective films, wherein said antireflective films are severally made of a silicon oxynitride film having a film thickness within a range from 40 nm to 60 nm, and silicon oxide films each having a film thickness of 8 nm or less are formed between said light receiving portions and said antireflective films.
Specification