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High light efficiency of GaN-series of light emitting diode and its manufacturing method thereof

  • US 20050110031A1
  • Filed: 09/27/2004
  • Published: 05/26/2005
  • Est. Priority Date: 11/25/2003
  • Status: Abandoned Application
First Claim
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1. A high light efficiency of GaN-series of light emitting diode comprising:

  • a substrate;

    a semiconductor, which formed on the said substrate that including a n-type semiconductor, a light emitting layer, a p-type semiconductor layer;

    wherein said light emitting layer is between said n-type semiconductor layer and said p-type semiconductor layer, and the surface of said p-type semiconductor layer have a texture that generated from a epitaxial process.

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