Semiconductor device and method for forming the same
First Claim
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1. A display device comprising:
- a thin film transistor comprising source and drain regions wherein each of said source and drain regions comprises silicon;
a multi-layer film electrically connected to one of said source and drain regions, wherein said multi-layer film comprises a chromium layer and an aluminum layer;
a pixel electrode electrically connected to said one of the source and drain regions through said multi-layer film.
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Abstract
A low temperature process for fabricating a high-performance and reliable semiconductor device in high yield, comprising forming a silicon oxide film as a gate insulator by chemical vapor deposition using TEOS as a starting material under an oxygen, ozone, or a nitrogen oxide atmosphere on a semiconductor coating having provided on an insulator substrate; and irradiating a pulsed laser beam or an intense light thereto to remove clusters of such as carbon and hydrocarbon to thereby eliminate trap centers from the silicon oxide film. Also claimed is a process comprising implanting nitrogen ions into a silicon oxide film and annealing the film thereafter using an infrared light, to thereby obtain a silicon oxynitride film as a gate insulator having a densified film structure, a high dielectric constant, and an improved-withstand voltage.
115 Citations
122 Claims
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1. A display device comprising:
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a thin film transistor comprising source and drain regions wherein each of said source and drain regions comprises silicon;
a multi-layer film electrically connected to one of said source and drain regions, wherein said multi-layer film comprises a chromium layer and an aluminum layer;
a pixel electrode electrically connected to said one of the source and drain regions through said multi-layer film. - View Dependent Claims (2, 3, 4, 5, 7, 8, 9, 10, 12, 13, 14, 15, 55)
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6. A display device comprising:
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a thin film transistor comprising source and drain regions wherein each of said source and drain regions comprises silicon;
a multi-layer film electrically connected to one of said source and drain regions, wherein said multi-layer film comprises a chromium layer and an aluminum layer formed on said chromium layer;
a pixel electrode electrically connected to said one of the source and drain regions through said multi-layer film. - View Dependent Claims (56)
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11. A display device comprising:
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a thin film transistor comprising source and drain regions wherein each of said source and drain regions comprises silicon;
a multi-layer film electrically connected to one of said source and drain regions, wherein said multi-layer film comprises a chromium layer and an aluminum layer formed on said chromium layer;
a pixel electrode electrically connected to said one of the source and drain regions through said multi-layer film, wherein said chromium layer contacts both said one of the source and drain regions and said pixel electrode. - View Dependent Claims (57)
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16. A display device comprising:
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a thin film transistor comprising source and drain regions wherein each of said source and drain regions comprises silicon;
an electrode electrically connected to one of said source and drain regions and having a multi-layer structure including a first conductive layer comprising chromium and a second conductive layer comprising aluminum;
a pixel electrode electrically connected to said one of the source and drain regions through said electrode. - View Dependent Claims (17, 18, 19, 20, 58)
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21. A display device comprising:
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a thin film transistor comprising source and drain regions wherein each of said source and drain regions comprises silicon;
an electrode electrically connected to one of said source and drain regions and having a multi-layer structure including a first conductive layer comprising chromium and a second conductive layer comprising aluminum, wherein said second conductive layer is formed on said first conductive layer;
a pixel electrode electrically connected to said one of the source and drain regions through said electrode having the multi-layer structure. - View Dependent Claims (22, 23, 24, 25, 59)
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26. A display device comprising:
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a thin film transistor comprising source and drain regions wherein each of said source and drain regions comprises silicon;
an electrode electrically connected to one of said source and drain regions and having a multi-layer structure including a first conductive layer comprising chromium and a second conductive layer comprising aluminum, wherein said second conductive layer is formed on said first conductive layer;
a pixel electrode electrically connected to said one of the source and drain regions through said electrode having the multi-layer structure, wherein said first conductive layer contacts both said one of the source and drain regions and said pixel electrode. - View Dependent Claims (27, 28, 29, 30, 60)
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31. A display device comprising:
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a thin film transistor comprising source and drain regions wherein each of said source and drain regions comprises silicon;
a multi-layer film electrically connected to one of said source and drain regions, wherein said multi-layer film comprises a chromium layer and an aluminum layer;
an interlayer insulator comprising a resin formed over said thin film transistor; and
a pixel electrode formed on said interlayer insulator and electrically connected to said one of the source and drain regions through said multi-layer film. - View Dependent Claims (32, 33, 34, 35, 36, 61)
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37. A display device comprising:
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a thin film transistor comprising source and drain regions wherein each of said source and drain regions comprises silicon;
a multi-layer film electrically connected to one of said source and drain regions, wherein said multi-layer film comprises a chromium layer and an aluminum layer formed on said chromium layer;
an interlayer insulator comprising a resin formed over said thin film transistor; and
a pixel electrode formed on said interlayer insulator and electrically connected to said one of the source and drain regions through said multi-layer film. - View Dependent Claims (38, 39, 40, 41, 42, 62, 65)
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43. A display device comprising:
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a thin film transistor comprising source and drain regions wherein each of said source and drain regions comprises silicon;
an electrode electrically connected to one of said source and drain regions and having a multi-layer structure including a first conductive layer comprising chromium and a second conductive layer comprising aluminum, wherein said second conductive layer is formed on said first conductive layer;
an interlayer insulator comprising a resin formed over said thin film transistor; and
a pixel electrode formed on said interlayer insulator and electrically connected to said one of the source and drain regions through said electrode having the multi-layer structure. - View Dependent Claims (44, 45, 46, 47, 48, 63)
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49. A display device comprising:
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a thin film transistor comprising source and drain regions wherein each of said source and drain regions comprises silicon;
an electrode electrically connected to one of said source and drain regions and having a multi-layer structure including a first conductive layer comprising chromium and a second conductive layer comprising aluminum, wherein said second conductive layer is formed on said first conductive layer;
an interlayer insulator comprising a resin formed over said thin film transistor; and
a pixel electrode formed on said interlayer insulator and electrically connected to said one of the source and drain regions through said electrode having the multi-layer structure, wherein said first film contacts both said one of the source and drain regions and said pixel electrode. - View Dependent Claims (50, 51, 52, 53, 54, 64, 66)
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67. A display device comprising:
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a thin film transistor comprising source and drain regions wherein each of said source and drain regions comprises silicon;
a multi-layer film electrically connected to one of said source and drain regions, wherein said multi-layer film comprises a chromium layer and an aluminum layer;
a pixel electrode electrically connected to said one of the source and drain regions through said multi-layer film, wherein a thickness of said chromium layer is from 20 to 200 nm and a thickness of said aluminum layer is from 100 to 2000 nm. - View Dependent Claims (68, 69, 70, 71, 72, 117)
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73. A display device comprising:
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a thin film transistor comprising source and drain regions wherein each of said source and drain regions comprises silicon;
a multi-layer film electrically connected to one of said source and drain regions, wherein said multi-layer film comprises a chromium layer and an aluminum layer formed on said chromium layer;
a pixel electrode electrically connected to said one of the source and drain regions through said multi-layer film, wherein a thickness of said chromium layer is from 20 to 200 nm and a thickness of said aluminum layer is from 100 to 2000 nm. - View Dependent Claims (74, 75, 76, 77, 78, 118)
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79. A display device comprising:
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a thin film transistor comprising source and drain regions wherein each of said source and drain regions comprises silicon;
an electrode electrically connected to one of said source and drain regions and having a multi-layer structure including a first conductive layer comprising chromium and a second conductive layer comprising aluminum;
a pixel electrode electrically connected to said one of the source and drain regions through said electrode, wherein a thickness of said first conductive layer is from 20 to 200 nm and a thickness of said second conductive layer is from 100 to 2000 nm. - View Dependent Claims (80, 81, 82, 83, 84, 119)
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85. A display device comprising:
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a thin film transistor comprising source and drain regions wherein each of said source and drain regions comprises silicon;
an electrode electrically connected to one of said source and drain regions and having a multi-layer structure including a first conductive layer comprising chromium and a second conductive layer comprising aluminum, wherein said second conductive layer is formed on said first conductive layer;
a pixel electrode electrically connected to said one of the source and drain regions through said electrode having the multi-layer structure, wherein a thickness of said first conductive layer is from 20 to 200 nm and a thickness of said second conductive layer is from 100 to 2000 nm. - View Dependent Claims (86, 87, 88, 89, 90, 120)
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91. A display device comprising:
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a thin film transistor comprising source and drain regions wherein each of said source and drain regions comprises silicon;
a multi-layer film electrically connected to one of said source and drain regions, wherein said multi-layer film comprises a first conductive layer and an aluminum layer;
a pixel electrode electrically connected to said one of the source and drain regions through said multi-layer film. - View Dependent Claims (92, 93, 94, 95, 96, 121)
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97. A display device comprising:
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a thin film transistor comprising source and drain regions wherein each of said source and drain regions comprises silicon;
a multi-layer film electrically connected to one of said source and drain regions, wherein said multi-layer film comprises a first conductive layer and an aluminum layer;
a pixel electrode electrically connected to said one of the source and drain regions through said multi-layer film, wherein a thickness of said first conductive layer is from 20 to 200 nm and a thickness of said aluminum layer is from 100 to 2000 nm. - View Dependent Claims (98, 99, 100, 101, 102, 103, 122)
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104. A display device comprising:
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a thin film transistor comprising source and drain regions wherein each of said source and drain regions comprises silicon;
an electrode electrically connected to one of said source and drain regions and having a multi-layer structure including a first conductive layer and a second conductive layer comprising aluminum;
a pixel electrode electrically connected to said one of the source and drain regions through said electrode. - View Dependent Claims (105, 106, 107, 108, 109)
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110. A display device comprising:
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a thin film transistor comprising source and drain regions wherein each of said source and drain regions comprises silicon;
an electrode electrically connected to one of said source and drain regions and having a multi-layer structure including a first conductive layer and a second conductive layer comprising aluminum;
a pixel electrode electrically connected to said one of the source and drain regions through said electrode, wherein a thickness of said first conductive layer is from 20 to 200 nm and a thickness of said second conductive layer is from 100 to 2000 nm. - View Dependent Claims (111, 112, 113, 114, 115, 116)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsYamazaki, Shunpei, Zhang, Hongyong
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Granted Patent
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Time in Patent OfficeDays
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Field of Search
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US Class Current257/347
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CPC Class CodesH01L 21/0214 the material being a silico...H01L 21/02164 the material being a silico...H01L 21/02211 the compound being a silane...H01L 21/02266 deposition by physical abla...H01L 21/02274 in the presence of a plasma...H01L 21/02332 into an oxide layer, e.g. c...H01L 21/02345 treatment by exposure to ra...H01L 21/02348 treatment by exposure to UV...H01L 21/02354 using a coherent radiation,...H01L 21/28158 Making the insulatorH01L 21/3144 on siliconH01L 29/66757 Lateral single gate single ...
