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Predictive applications for devices with thin dielectric regions

  • US 20050111155A1
  • Filed: 08/30/2004
  • Published: 05/26/2005
  • Est. Priority Date: 11/21/2003
  • Status: Active Grant
First Claim
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1. A process for taking an action on an electronic device comprising a field effect transistor with a gate dielectric of thickness 50 Å

  • or less, said process comprising the steps of performing a predictive application, wherein said predictive application comprises taking an action predicated on a prediction of the time to failure of said device dependent on measurement of a breakdown dependent current.

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