Predictive applications for devices with thin dielectric regions

• US 20050111155A1
• Filed: 08/30/2004
• Published: 05/26/2005
• Est. Priority Date: 11/21/2003
• Status: Active Grant

• Current Assignee: Bell Semiconductor, LLC (Hilco Inc. (d/b/a Hilco Global))
• Original Assignee: Agere Systems Incorporated (Broadcom, Inc.)
• Inventors: Smith, Robert Kent, Alam, Muhammad Ashraful, Mason, Philip W.
• Granted Patent: US 7,230,812 B2
• Time in Patent Office: Days
• US Class Current: 361/100
• CPC Class Codes: G01R 31/2621 for testing field effect transistors, i.e. FET's
• CPC Class Codes: G01R 31/2642 Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
• CPC Class Codes: G01R 31/3008 Quiescent current [IDDQ] test or leakage current test

Abstract

It is possible to predict with acceptable accuracy the time to failure of a device having a thin gate dielectric in a field effect transistor. Such prediction is based on the realization that for such thin dielectric multiple dielectric breakdown occurs before device failure ensues and that measurement of the device quiescent current flow provides the information necessary for such prediction. The ability to make reliable prediction allows improvement of device design, manufacture, and use.

Claims

1. A process for taking an action on an electronic device comprising a field effect transistor with a gate dielectric of thickness 50 Å

or less, said process comprising the steps of performing a predictive application, wherein said predictive application comprises taking an action predicated on a prediction of the time to failure of said device dependent on measurement of a breakdown dependent current.

2. The process of claim 1 wherein said predictive application comprises providing an expedient that displays a warning of impending failure of said electronic device based on said measurement.

3. The process of claim 2 wherein said measurement is made on a test structure.

4. The process of claim 1 wherein said predictive application comprises establishing characteristics of the structures of said electronic device.

5. The process of claim 1 wherein said measurement is employed to determine η

and β

where η

is the time to first breakdown of said gate dielectric and β

is the Weibull slope.

6. The process of claim 1 wherein said breakdown dependent current comprises the quiescent current.

7. The process of claim 1 wherein said predictive application comprises determining a condition to which said device was subjected.