Gas-assisted rapid thermal processing

• US 20050112907A1
• Filed: 11/24/2004
• Published: 05/26/2005
• Est. Priority Date: 11/08/2001
• Status: Active Grant

• Current Assignee: Woo Sik Yoo
• Original Assignee: Woo Sik Yoo
• Inventors: Yoo, Woo Sik
• Granted Patent: US 7,358,200 B2
• Time in Patent Office: Days
• US Class Current: 438/795
• CPC Class Codes: F27B 17/0025 Especially adapted for treating semiconductor wafers
• CPC Class Codes: H01L 21/67109 mainly by convection

Abstract

A system, method and apparatus for processing a semiconductor device including a processing chamber and a heating assembly positioned within the processing chamber. The heating assembly including at least a plate defining an internal cavity configured to receive gas. The gas enters the internal cavity through a first passage at a first temperature, and exits the internal cavity at a second temperature through a second passage.

Claims

1. A method for processing a semiconductor device, comprising:

providing a first heatable member between heating elements of a processing chamber, the first heatable member including a first internal cavity and means for heating the first internal cavity;

introducing a first gas into the first internal cavity;

heating the first gas substantially to a preselected temperature; and

impinging a semiconductor wafer with the heated gas to change the temperature of the semiconductor wafer.

2. The method of claim 1, wherein the first gas is selected from the group consisting of N₂, He, H₂, O₂, Ar, and gas mixtures containing N₂, He, H₂, O₂, and Ar.

3. The method of claim 1, wherein the preselected temperature is between about 100°

C. and about 1300°

C.

4. The method of claim 1, wherein the first gas is heated substantially to the preselected temperature with a resistive heating element.

5. The method of claim 1, wherein the first gas is heated substantially to the preselected temperature with a radiant heat source.

6. The method of claim 1, wherein the first internal cavity is configured to receive the first gas through a first passage and to emit the first gas through a second passage.

7. The method of claim 6, wherein the second passage includes a plurality of holes.

8. The method of claim 7, wherein the heated gas passes through the plurality of holes to impinge the surface of the semiconductor wafer.

9. The method of claim 6, wherein the semiconductor wafer is provided adjacent the second passage.

10. The method of claim 1, further comprising providing a second heatable member adjacent the first heatable member.

11. The method of claim 10, wherein the first and second heatable members are between the heating elements of the processing chamber.

12. The method of claim 11, wherein the semiconductor wafer is provided between the first and second heatable members.

13. A method for processing a semiconductor device, comprising:

providing first and second heatable members between heating elements of a processing chamber, the first heatable member including a first internal cavity and means for heating the first internal cavity, and the second heatable member including a second internal cavity and means for heating the second internal cavity;

providing a semiconductor wafer between the first and second heatable members;

introducing a first gas into the first internal cavity;

introducing a second gas into the second internal cavity;

heating the first gas substantially to a first preselected temperature;

heating the second gas substantially to a second preselected temperature; and

impinging the semiconductor wafer with the heated first and second gases to change the temperature of the semiconductor wafer.

14. The method of claim 13, wherein the first and second gases are the same.

15. The method of claim 13, wherein the first and second gases are different.

16. The method of claim 13, wherein the first and second gases are selected from the group consisting of N₂, He, H₂, O₂, Ar, and gas mixtures containing N₂, He, H₂, O₂, and Ar.

17. The method of claim 13, wherein the first and second preselected temperatures are the same.

18. The method of claim 13, wherein the first and second preselected temperatures are different.

19. The method of claim 13, wherein the first and second preselected temperatures are between about 100°

C. and about 1300°

C.

20. The method of claim 13, wherein the first internal cavity is configured to receive the first gas through a first passage and to emit the first gas through a second passage, and wherein the second internal cavity is configured to receive the second gas through a third passage and to emit the second gas through a fourth passage.

21. The method of claim 20, wherein the second and fourth passages include a plurality of holes.

22. The method of claim 21, wherein the heated gases pass through the plurality of holes to impinge the semiconductor wafer.

23. A method for processing a semiconductor device, comprising:

providing a first temperature control member in a process chamber, the first temperature control member including a first internal cavity and means for heating the first internal cavity;

providing a vacuum means operably coupled to the first internal cavity;

introducing a first gas into the first internal cavity;

heating the first gas substantially to a preselected temperature;

impinging a semiconductor wafer with the heated first gas to heat the semiconductor wafer; and

flowing a second gas over the semiconductor wafer from the process chamber and into the first internal cavity to cool the semiconductor wafer.

24. The method of claim 23, wherein the first and second gases are the same.

25. The method of claim 23, wherein the first and second gases are different.

26. The method of claim 23, wherein the first and second gases are selected from the group consisting of N₂, He, H₂, O₂, Ar, and gas mixtures containing N₂, He, H₂, O₂, and Ar.

27. The method of claim 23, wherein the second gas is ambient air.

28. The method of claim 23, wherein a cooling rate of the semiconductor wafer is between about 5°

C./sec and about 20°

C./sec.

29. The method of claim 23, further comprising providing a second temperature control member adjacent the first temperature control member.

30. The method of claim 29, wherein the semiconductor wafer is provided between the first and second temperature control members.