Substrate treating apparatus and substrate treating method

• US 20050115671A1
• Filed: 11/29/2004
• Published: 06/02/2005
• Est. Priority Date: 12/02/2003
• Status: Abandoned Application

• Current Assignee: Dainippon Screen Manufacturing Company Limited (SCREEN Holdings Co., Ltd.)
• Original Assignee: Dainippon Screen Manufacturing Company Limited (SCREEN Holdings Co., Ltd.)
• Inventors: Araki, Hiroyuki
• Application Number:
  US10/998,843
• Publication Number:
  US 20050115671A1
• Time in Patent Office: Days
• US Class Current: 156/345.120
• CPC Class Codes: B08B 7/04 by a combination of operations
• CPC Class Codes: H01L 21/02049 with gaseous HF
• CPC Class Codes: H01L 21/02052 Wet cleaning only H01L21/02085 takes precedence
• CPC Class Codes: H01L 21/02071 the processing being a delineation, e.g. RIE, of conductive layers
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/67046 using mainly scrubbing means, e.g. brushes
• CPC Class Codes: H01L 21/67051 using mainly spraying means, e.g. nozzles
• CPC Class Codes: H01L 21/67167 surrounding a central transfer chamber
• CPC Class Codes: H01L 21/67236 the substrates being processed being not semiconductor wafers, e.g. leadframes or chips

Abstract

A substrate treating apparatus includes at least two types of treatment units, and a substrate carrying mechanism for carrying a substrate into/out of at least the two types of treatment units. At least the two types of treatment units are selected out of a chemical liquid treatment unit for supplying a chemical liquid to the substrate, a scrubbing unit for scrubbing a surface of the substrate, a polymer removal unit for supplying a polymer removal liquid to the substrate, a peripheral end surface treatment unit for supplying a treatment liquid to an area including the whole of one surface and a peripheral end surface of the substrate, and a gas phase treatment unit for supplying a vapor to the substrate.

Claims

1. A substrate treating apparatus comprising:

at least two types of treatment units selected from the group consisting of a chemical liquid treatment unit for holding and rotating a substrate by a substrate holding and rotating mechanism as well as supplying a chemical liquid from a chemical liquid nozzle to the substrate to treat the substrate, a scrubbing unit for holding and rotating a substrate by a substrate holding and rotating mechanism to supply deionized water to the substrate as well as scrubbing a surface of the substrate with a scrub brush, a polymer removal unit for holding and rotating a substrate by a substrate holding and rotating mechanism as well as supplying a polymer removal liquid to the substrate to remove a residue on the substrate, a peripheral end surface treatment unit for holding and rotating a substrate by a substrate holding and rotating mechanism as well as supplying a treatment liquid to an area including the whole of one surface and a peripheral end surface of the substrate so as to selectively remove an unnecessary material in the area, and a gas phase treatment unit for supplying a vapor including a chemical liquid or a vapor including a chemical gas to a substrate held in a substrate holding mechanism to treat the substrate; and

a substrate carrying mechanism for carrying a substrate into/out of at least the two types of treatment units.

2. The substrate treating apparatus according to claim 1, further comprising

a reversing unit for reversing the front and back surfaces of the substrate carried by the substrate carrying mechanism from one of at least the two types of treatment units.

3. The substrate treating apparatus according to claim 2, wherein

at least the two types of treatment units include the scrubbing unit, and

the scrubbing unit scrubs the surface of the substrate which has been reversed by the reversing unit.

4. The substrate treating apparatus according to claim 1, wherein

at least the two types of treatment units includes the chemical liquid treatment unit and the scrubbing unit.

5. The substrate treating apparatus according to claim 1, wherein

at least the two types of treatment units includes the chemical liquid treatment unit and the polymer removal unit.

6. The substrate treating apparatus according to claim 5, wherein

the chemical liquid nozzle in the chemical liquid treatment unit includes a nozzle for supplying a resist stripping liquid for stripping the resist film on the surface of the substrate which is held by the substrate holding and rotating mechanism.

7. The substrate treating apparatus according to claim 1, wherein

at least the two types of treatment units include the scrubbing unit and the polymer removal unit.

8. The substrate treating apparatus according to claim 1, wherein

at least the two types of treatment units include the polymer removal unit and the peripheral end surface treatment unit.

9. The substrate treating apparatus according to claim 1, wherein

at least the two types of treatment units include the chemical liquid treatment unit and the gas phase treatment unit.

10. The substrate treating apparatus according to claim 9, wherein

the chemical liquid treatment unit further includes a droplet jet supply section for supplying a jet of droplets of the treatment liquid to the substrate held in the substrate holding and rotating mechanism.

11. A substrate treating method comprising at least two steps selected from the group consisting of:

a chemical liquid treating step for supplying a chemical liquid to a substrate which is held and rotated by a substrate holding and rotating mechanism to treat the substrate;

a scrubbing step for supplying deionized water to a substrate which is held and rotated by a substrate holding and rotating mechanism as well as scrubbing a surface of the substrate with a scrub brush to remove foreign matter on the surface of the substrate;

a polymer removing step for supplying a polymer removal liquid to a substrate which is held and rotated by a substrate holding and rotating mechanism, to remove a residue on the substrate;

a peripheral end surface treating step for supplying a treatment liquid to an area including the whole of one of surfaces and a peripheral end surface of the substrate which is held and rotated by a substrate holding and rotating mechanism, to selectively remove an unnecessary material in the area;

a gas phase treating step for supplying a vapor including a chemical liquid or a vapor including a chemical gas to a substrate held in a substrate holding mechanism to treat the substrate.

12. The substrate treating method according to claim 11, wherein

at least the two steps are continuously carried out through a substrate carrying step for carrying the substrate without accommodating the substrate in an accommodation chamber capable of accommodating a plurality of substrates.

13. The substrate treating method according to claim 11, further comprising

a reversing step for reversing the front and back surfaces of the substrate between at least the two steps.

14. The substrate treating method according to claim 12, further comprising

a reversing step for reversing the front and back surfaces of the substrate between at least the two steps.

15. The substrate treating method according to claim 13, wherein

the scrubbing step is carried out after the reversing step, to subject a non-device formation surface which is opposite to a device formation surface of the substrate to scrubbing treatment.

16. The substrate treating method according to claim 14, wherein

the scrubbing step is carried out after the reversing step, to subject a non-device formation surface which is opposite to a device formation surface of the substrate to scrubbing treatment.

17. The substrate treating method according to claim 11, wherein

at least the two steps include the chemical liquid treating step and the scrubbing step,

the device formation surface of the substrate is subjected to chemical liquid treatment in the chemical liquid treating step, and

a non-device formation surface which is opposite to the device formation surface of the substrate is subjected to scrubbing treatment in the scrubbing step.

18. The substrate treating method according to claim 11, wherein

at least the two steps include the chemical liquid treating step and the polymer removing step,

a chemical liquid is supplied to the device formation surface of the substrate to perform chemical liquid treatment in the chemical liquid treating step, and

the device formation surface of the substrate is subjected to polymer removal treatment in the polymer removing step.

19. The substrate treating method according to claim 18, wherein

the chemical liquid treating step includes the step of supplying a resist stripping liquid as the chemical liquid to the device formation surface of the substrate, to strip the resist film on the device formation surface.

20. The substrate treating method according to claim 11, wherein

at least the two steps include the scrubbing step and the polymer removing step,

the device formation surface of the substrate is subjected to polymer residue removal treatment in the polymer removing step, and

a non-device formation surface which is opposite to the device formation surface of the substrate is subjected to scrubbing treatment in the scrubbing step.

21. The substrate treating method according to claim 11, wherein

at least the two steps include the polymer removing step and the peripheral end surface treating step,

the device formation surface of the substrate is subjected to polymer removal treatment in the polymer removing step, and

unnecessary materials on a non-device formation surface which is opposite to the device formation surface and a peripheral end surface of the substrate are selectively removed in the peripheral end surface treating step.

22. The substrate treating method according to claim 11, wherein

at least the two steps include the gas phase treating step and the chemical liquid treating step,

a thin film on the device formation surface of the substrate is selectively etched in the gas phase treating step, and

the device formation surface of the substrate is subjected to chemical liquid treatment in the chemical liquid treating step.

23. The substrate treating method according to claim 22, wherein

a jet of droplets of the treatment liquid is supplied to the device formation surface in the chemical liquid treating step.

24. A substrate treating apparatus comprising:

a substrate holding and rotating mechanism for holding and rotating a substrate;

a resist stripping liquid nozzle for supplying a resist stripping liquid to a substrate to be treated which is held and rotated by the substrate holding and rotating mechanism; and

a polymer removal liquid nozzle for supplying a polymer removal liquid to a substrate to be treated which is held and rotated by the substrate holding and rotating mechanism.

25. The substrate treating apparatus according to claim 24, wherein

the polymer removal liquid nozzle supplies an inorganic polymer removal liquid.

26. A substrate treating method comprising:

a substrate holding and rotating step for holding and rotating a substrate by a substrate holding and rotating mechanism arranged in a treatment chamber,

a resist stripping step for supplying a resist stripping liquid to the surface of the substrate which is held and rotated in the substrate holding and rotating step, to strip a resist film-on the substrate, and

a polymer removing step for supplying a polymer removal liquid to a surface of the substrate which is held in the substrate holding and rotating step after the resist stripping step.

27. The substrate treating method according to claim 26, wherein

the polymer removing step comprises the step of supplying an inorganic polymer removal liquid to the substrate.