Laser irradiation apparatus, laser irradiation method and method for manufacturing semiconductor device
First Claim
1. A laser irradiation apparatus comprising:
- a pulsed laser oscillator, wherein the pulsed laser oscillator has a pulse repetition rate of 10 MHz or more.
1 Assignment
0 Petitions
Accused Products
Abstract
The object of the present invention is to provide a laser irradiation apparatus being able to enlarge the beam spot to a large degree compared with that of the CW laser, to suppress the thermal damage to the glass substrate, and to form an aggregation of crystal grains including a single crystal extending long in a scanning direction by growing the crystal continuously in the scanning direction. The laser irradiation of the present invention comprises a pulsed laser oscillator, a non-linear optical element for converting the wavelength of the laser light emitted from the pulsed laser oscillator, and an optical system for condensing the laser light whose wavelength is converted on a semiconductor film, wherein the pulsed laser oscillator has a repetition rate in the range of 10 MHz to 100 GHz.
100 Citations
92 Claims
-
1. A laser irradiation apparatus comprising:
-
a pulsed laser oscillator, wherein the pulsed laser oscillator has a pulse repetition rate of 10 MHz or more. - View Dependent Claims (53, 54)
-
-
2. A laser irradiation apparatus comprising:
-
a pulsed laser oscillator, wherein the pulsed laser oscillator has a pulse repetition rate from 10 MHz to 100 GHz. - View Dependent Claims (55, 56)
-
-
3. A laser irradiation apparatus comprising:
-
a pulsed laser oscillator;
a non-linear optical element for converting a wavelength of laser light emitted from the pulsed laser oscillator; and
an optical system for condensing the laser light whose wavelength is converted on a processing object, wherein the pulsed laser oscillator has a pulse repetition rate of 10 MHz or more. - View Dependent Claims (7, 35, 57, 58)
-
-
4. A laser irradiation apparatus comprising:
-
a pulsed laser oscillator;
a non-linear optical element for converting a wavelength of laser light emitted from the pulsed laser oscillator; and
an optical system for condensing the laser light whose wavelength is converted on a processing object, wherein the pulsed laser oscillator has a pulse repetition rate from 10 MHz to 100 GHz. - View Dependent Claims (24, 36, 59, 60)
-
-
5. A laser irradiation apparatus comprising:
-
a pulsed laser oscillator;
a non-linear optical element for converting a wavelength of laser light emitted from the pulsed laser oscillator; and
an optical system for condensing the laser light whose wavelength is converted on a processing object, wherein the pulsed laser oscillator has a pulse repetition rate from 10 MHz to 100 GHz; and
wherein an inequality of ct<
2nd is satisfied where c is a speed of light in vacuum, n is a refractive index of a substrate with the processing object formed thereover, d is a thickness of the substrate, and t is a pulse width of the laser light. - View Dependent Claims (25, 37, 61, 62)
-
-
6. A laser irradiation apparatus comprising:
-
a pulsed laser oscillator;
a non-linear optical element for converting a wavelength of laser light emitted from the pulsed laser oscillator; and
an optical system for condensing the laser light whose wavelength is converted on a processing object, wherein the pulsed laser oscillator has a pulse repetition rate from 10 MHz to 100 GHz; and
wherein an inequality of ct<
4nd is satisfied where c is a speed of light in vacuum, n is a refractive index of a substrate with the processing object formed thereover, d is a thickness of the substrate, and t is a pulse width of the laser light. - View Dependent Claims (26, 38, 63, 64)
-
- 8. A laser irradiation method comprising the step of irradiating a processing object with pulsed laser light at a pulse repetition rate of 10 MHz or more.
- 9. A laser irradiation method comprising the step of irradiating a processing object with pulsed laser light at a pulse repetition rate from 10 MHz to 100 GHz.
-
10. A laser irradiation method comprising the steps of:
-
converting a wavelength of laser light emitted from a pulsed laser oscillator using a non-linear optical element; and
irradiating a processing object with the laser light whose wavelength is converted, wherein a pulse repetition rate is 10 MHz or more. - View Dependent Claims (15, 41, 69, 70)
-
-
11. A laser irradiation method comprising the steps of:
-
converting a wavelength of laser light emitted from a pulsed laser oscillator using a non-linear optical element; and
irradiating a processing object with the laser light whose wavelength is converted, wherein a pulse repetition rate is from 10 MHz to 100 GHz. - View Dependent Claims (27, 42, 71, 72)
-
-
12. A laser irradiation method comprising the steps of:
-
converting a wavelength of laser light emitted from a pulsed laser oscillator using a non-linear optical element; and
irradiating a processing object with the laser light whose wavelength is converted, wherein a pulse repetition rate is from 10 MHz to 100 GHz; and
wherein an inequality of ct<
2nd is satisfied where c is a speed of light in vacuum, n is a refractive index of a substrate with the processing object formed thereover, d is a thickness of the substrate, and t is a pulse width of the laser light. - View Dependent Claims (28, 43, 73, 74)
-
-
13. A laser irradiation method comprising the steps of:
-
converting a wavelength of laser light emitted from a pulsed laser oscillator using a non-linear optical element; and
irradiating a processing object with the laser light whose wavelength is converted, wherein a pulse repetition rate is from 10 MHz to 100 GHz; and
wherein an inequality of ct<
4nd is satisfied where c is a speed of light in vacuum, n is a refractive index of a substrate with the processing object formed thereover, d is a thickness of the substrate, and t is a pulse width of the laser light. - View Dependent Claims (29, 44, 75, 76)
-
-
14. A laser irradiation method comprising the steps of:
-
converting a wavelength of laser light emitted from a pulsed laser oscillator using a non-linear optical element; and
irradiating a processing object with the laser light whose wavelength is converted, wherein a pulse repetition rate is from 10 MHz to 100 GHz; and
wherein a region of the processing object is irradiated simultaneously with both the laser light being incident thereinto and the laser light reflected on a rear surface of the substrate with the processing object formed thereover for a time corresponding to 10% or less of a pulse width of the laser light. - View Dependent Claims (30, 45, 77, 78)
-
- 16. A method for manufacturing a semiconductor device comprising the step of irradiating a processing object with pulsed laser light at a pulse repetition rate of 10 MHz or more.
- 17. A method for manufacturing a semiconductor device comprising the step of irradiating a processing object with pulsed laser light at a pulse repetition rate from 10 MHz to 100 GHz.
-
18. A method for manufacturing a semiconductor device comprising the steps of:
-
converting a wavelength of laser light emitted from a pulsed laser oscillator using a non-linear optical element; and
irradiating a processing object with laser light whose wavelength is converted, wherein a pulse repetition rate is 10 MHz or more. - View Dependent Claims (23, 48, 83, 84)
-
-
19. A method for manufacturing a semiconductor device comprising the steps of:
-
converting a wavelength of laser light emitted from a pulsed laser oscillator using a non-linear optical element; and
irradiating a processing object with laser light whose wavelength is converted, wherein a pulse repetition rate is from 10 MHz to 100 GHz. - View Dependent Claims (31, 49, 85, 86)
-
-
20. A method for manufacturing a semiconductor device comprising the steps of:
-
converting a wavelength of laser light emitted from a pulsed laser oscillator using a non-linear optical element; and
irradiating a processing object with laser light whose wavelength is converted, wherein a pulse repetition rate is from 10 MHz to 100 GHz; and
wherein an inequality of ct<
2nd is satisfied where c is a speed of light in vacuum, n is a refractive index of a substrate with the processing object formed thereover, d is a thickness of the substrate, and t is a pulse width of the laser light. - View Dependent Claims (32, 50, 87, 88)
-
-
21. A method for manufacturing a semiconductor device comprising the steps of:
-
converting a wavelength of laser light emitted from a pulsed laser oscillator using a non-linear optical element; and
irradiating a processing object with laser light whose wavelength is converted, wherein a pulse repetition rate is from 10 MHz to 100 GHz; and
wherein an inequality of ct<
4nd is satisfied where c is a speed of light in vacuum, n is a refractive index of a substrate with the processing object formed thereover, d is a thickness of the substrate, and t is a pulse width of the laser light. - View Dependent Claims (33, 51, 89, 90)
-
-
22. A method for manufacturing a semiconductor device comprising the steps of:
-
converting a wavelength of laser light emitted from a pulsed laser oscillator using a non-linear optical element; and
irradiating a processing object with the laser light whose wavelength is converted, wherein the pulsed laser oscillator has a pulse repetition rate from 10 MHz to 100 GHz; and
wherein a region of the processing object is irradiated simultaneously with both the laser light being incident thereinto and the laser light reflected on a rear surface of the substrate with the processing object formed thereover for a time corresponding to 10% or less of a pulse width of the laser light. - View Dependent Claims (34, 52, 91, 92)
-
Specification