Solid-state imaging device

• US 20050116251A1
• Filed: 11/02/2004
• Published: 06/02/2005
• Est. Priority Date: 11/05/2003
• Status: Active Grant

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Suzuki, Ryoji, Mabuchi, Keiji, Abe, Takashi, Ueno, Takahisa, Haruta, Tsutomu, Iizuka, Testuya
• Granted Patent: US 7,485,903 B2
• Time in Patent Office: Days
• US Class Current: 257/146
• CPC Class Codes: H01L 27/14603 Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers

Abstract

A solid-state imaging device having an arrangement in which well contact is achieved for each pixel is provided. In the solid-state imaging device, a well contact part is formed in an activation region of a photoelectric conversion portion. The well contact part fixes a well in which the photoelectric conversion portion and transistors of the pixel are provided at a predetermined potential.

Claims

1. A solid-state imaging device comprising:

a pixel array area including pixels arranged in wells in a two-dimensional array fashion, each of the pixels including;

a photoelectric conversion portion including an activation region;

a reading portion for reading a signal photo-electrically converted by the photoelectric conversion portion; and

an amplifying portion for amplifying the signal read by the reading portion; and

well potential fixing parts each provided in the activation region of the photoelectric conversion portion in the corresponding pixel, the well potential fixing parts fixing the respective wells at a predetermined potential.

2. The solid-state imaging device according to claim 1, wherein:

the photoelectric conversion portion includes a first impurity region of a first conductivity type and a second impurity region of a second conductivity type provided on the first impurity region; and

each of the well potential fixing parts includes an impurity region of the second conductivity type whose density is higher than the second impurity region.

3. The solid-state imaging device according to claim 1, wherein the wells in the pixel array area are formed integrally and are fixed by the well potential fixing parts at each pixel.

4. A solid-state imaging device comprising:

a pixel array area including pixels arranged in wells in a two-dimensional array fashion, each of the pixels including;

a photoelectric conversion portion;

a reading portion for reading a signal photo-electrically converted by the photoelectric conversion portion; and

an amplifying portion for amplifying the signal read by the reading portion; and

well potential fixing parts each provided for a plurality of pixels in the pixel array area, the well potential fixing parts fixing the respective wells at a predetermined potential.

5. The solid-state imaging device according to claim 4, further comprising a signal processing area for performing correction of a pixel characteristic of a signal of a pixel in which the corresponding well potential fixing part is provided or a signal in a pixel column or a pixel row to which the pixel belongs.

6. The solid-state imaging device according to claim 4, wherein each of the well potential fixing parts is provided in place of a pixel among the plurality of pixels.

7. The solid-state imaging device according to claim 6, further comprising a signal processing area for generating information on the pixel in which the corresponding well potential fixing part is provided in accordance with information on peripheral pixels peripheral to the pixel.

8. The solid-state imaging device according to claim 7, wherein the peripheral pixels are pixels belonging to the same row as the pixel, pixels belonging to the same column as the pixel, or pixels belonging to the same row and the same column as the pixel.

9. A solid-state imaging device comprising a pixel array area including a plurality of pixels each including a photoelectric conversion portion, wherein

the pixel array area includes a well portion and a potential fixing part for fixing the well portion at a predetermined potential.

10. A module-type imaging device comprising a pixel array area including a plurality of pixels each including a photoelectric conversion portion, wherein

the pixel array area includes a well portion;

a potential fixing part for fixing the well portion at a predetermined potential; and

an optical system for guiding incident light to the pixel array area.