×

MOS transistor device

  • US 20050116267A1
  • Filed: 11/24/2004
  • Published: 06/02/2005
  • Est. Priority Date: 11/28/2003
  • Status: Active Grant
First Claim
Patent Images

1. A trench transistor device having an upper region and a lower region, comprising:

  • a gate trench extending through the upper region and the lower region;

    a gate electrode projecting into the gate trench, insulated via an outer gate oxide, the gate electrode having a gate step beginning at a transition from the upper region to the lower region; and

    a mesa region adjacent the gate trench, having a body reinforcement extending through a portion of the upper region, through the transition at a depth below a beginning of the gate step.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×