Metal-insulator-metal (MIM) capacitor and fabrication method for making the same
First Claim
1. A metal-insulator-metal (MIM) capacitor, comprising:
- a first metal plate;
a first capacitor dielectric layer disposed on the first metal plate;
a second metal plate stacked on the first capacitor dielectric layer, wherein the first metal plate, the first capacitor dielectric layer, and the second metal plate constitute a lower capacitor;
a second capacitor dielectric layer disposed on the second metal plate; and
a third metal plate stacked on the second capacitor dielectric layer, wherein the second metal plate, the second capacitor dielectric layer, and the third metal plate constitute an upper capacitor;
and wherein the first metal plate and the third metal plate are electrically connected to a first terminal of the MIM capacitor, while the second metal plate is electrically connected to a second terminal of the MIM capacitor.
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Accused Products
Abstract
A metal-insulator-metal (MIM) capacitor includes a first metal plate; a first capacitor dielectric layer disposed on the first metal plate and a second metal plate stacked on the first capacitor dielectric layer. The first metal plate, the first capacitor dielectric layer, and the second metal plate constitute a lower capacitor. A second capacitor dielectric layer is disposed on the second metal plate. A third metal plate is stacked on the second capacitor dielectric layer. The second metal plate, the second capacitor dielectric layer, and the third metal plate constitute an upper capacitor. The first metal plate and the third metal plate are electrically connected to a first terminal of the MIM capacitor, while the second metal plate is electrically connected to a second terminal of the MIM capacitor.
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Citations
9 Claims
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1. A metal-insulator-metal (MIM) capacitor, comprising:
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a first metal plate;
a first capacitor dielectric layer disposed on the first metal plate;
a second metal plate stacked on the first capacitor dielectric layer, wherein the first metal plate, the first capacitor dielectric layer, and the second metal plate constitute a lower capacitor;
a second capacitor dielectric layer disposed on the second metal plate; and
a third metal plate stacked on the second capacitor dielectric layer, wherein the second metal plate, the second capacitor dielectric layer, and the third metal plate constitute an upper capacitor;
and wherein the first metal plate and the third metal plate are electrically connected to a first terminal of the MIM capacitor, while the second metal plate is electrically connected to a second terminal of the MIM capacitor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9-12. -12. (canceled)
Specification
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- Resources
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Current AssigneeUnited Microelectronics Corporation
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Original AssigneeUnited Microelectronics Corporation
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InventorsGau, Jing-Horng
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Application NumberUS10/707,225Publication NumberTime in Patent OfficeDaysField of SearchUS Class Current257/306CPC Class CodesH01L 23/5223 Capacitor integral with wir...H01L 28/60 ElectrodesH01L 2924/00 Indexing scheme for arrange...H01L 2924/0002 Not covered by any one of g...
