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Closed cell trench metal-oxide-semiconductor field effect transistor

  • US 20050116282A1
  • Filed: 12/02/2003
  • Published: 06/02/2005
  • Est. Priority Date: 12/02/2003
  • Status: Active Grant
First Claim
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1. A closed cell trench metal-oxide-semiconductor field effect transistor (TMOSFET) comprising:

  • a drain region;

    a body region disposed above said drain region;

    a gate region disposed within said body region;

    a gate insulator region disposed about a periphery of said gate region;

    a plurality of source regions disposed along the surface of said body region proximate a periphery of said gate insulator region;

    wherein a first portion of said gate region and a first portion of said gate insulator region are formed as a substantially parallel elongated structure;

    wherein a second portion of said gate region and a second portion of said gate insulator region are formed as a normal-to-parallel structure;

    wherein a first portion of said drain region overlaps said parallel structure; and

    wherein a second portion of said drain region is separated from said normal-to-parallel structure.

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