Semiconductor device and manufacturing method thereof
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Abstract
In a semiconductor device including a plurality of element regions and an element isolation region based on STI (shallow trench isolation) which electrically isolates the element regions from each other, each of the element regions includes; a channel region; source/drain regions formed to sandwich the channel region in a horizontal direction; a gate insulation film which is formed on the channel region and in which an angle of a bird'"'"'s beak is 1 degree or smaller, the bird'"'"'s beak being formed from a side of the element isolation region on a surface opposite a surface facing the channel region in a horizontal direction substantially perpendicular to the direction in which the source/drain region sandwich the channel region; and a gate electrode layer formed on the gate insulation film.
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Citations
12 Claims
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1-9. -9. (canceled)
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10. A semiconductor device manufacturing method, comprising:
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forming a gate insulation film on a substrate;
forming a gate electrode layer on the gate insulation film;
forming a trench structured to pass through the gate electrode layer and the gate insulation film and to dig into the substrate; and
burying an insulation film in the trench to be in direct contact with a side surface of the gate electrode layer in the trench and a side surface of the substrate in the trench. - View Dependent Claims (11, 12)
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Specification