Light sensing element, array substrate having the same and liquid crystal display apparatus having the same

• US 20050117079A1
• Filed: 10/22/2004
• Published: 06/02/2005
• Est. Priority Date: 10/23/2003
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Pak, Sang-Jin, Uh, Kee-Han, Jeon, Jin, Kim, Hyung-Guel, Jung, Young-Bae, Cho, Jong-Whan
• Granted Patent: US 7,279,730 B2
• Time in Patent Office: Days
• US Class Current: 349/43
• CPC Class Codes: G02F 1/13312 Circuits comprising photodetectors for purposes other than feedback
• CPC Class Codes: G02F 1/13338 Input devices, e.g. touch panels
• CPC Class Codes: G02F 1/133555 Transflectors
• CPC Class Codes: G02F 1/1362 Active matrix addressed cells G02F1/134336, G02F1/134363 take precedence
• CPC Class Codes: H01L 27/14603 Special geometry or disposition of pixel-elements, address-lines or gate-electrodes

Abstract

In a light sensing element having simplified structure, an array substrate having the light sensing element and an LCD apparatus having the light sensing element, the light sensing element includes a first electrode, a control electrode and a second electrode. An alternating bias voltage is applied to the first electrode. An off voltage is applied to the control electrode. The second electrode outputs a light-induced leakage current based on an externally provided light and the bias voltage. Therefore, the array substrate includes one light sensing switching element corresponding to one pixel so that structure of the array substrate is simplified and opening ratio is increased.

Claims

1. A light sensing element comprising:

a first electrode receiving an alternating bias voltage;

a control electrode receiving an off voltage; and

a second electrode outputting a light-induced leakage current based on an externally provided light and the bias voltage.

2. The light sensing element of claim 1, wherein the light sensing element comprises a thin film transistor.

3. The light sensing element of claim 1, wherein the light sensing element comprises a channel layer disposed between the first and second electrodes, and the channel layer corresponds to the control electrode.

4. The light sensing element of claim 3, wherein the channel layer comprises an amorphous silicon layer.

5. The light sensing element of claim 1, wherein the bias voltage alternates between a first level and a second level that is different from the first level.

6. The light sensing element of claim 5, wherein the second level comprises an identical polarity to the first level.

7. The light sensing element of claim 5, wherein the second level comprises an opposite polarity to the first level.

8. The light sensing element of claim 7, wherein the bias voltage alternates between about −

7.5V and about 15V, and the light-induced leakage current corresponds to about 1.3V.

9. A light sensing element comprising:

a first electrode receiving an alternating bias voltage;

a control electrode; and

a second electrode electrically connected to the control electrode, the second electrode outputting a light-induced leakage current based on an externally provided light and the bias voltage.

10. The light sensing element of claim 9, wherein the bias voltage alternates between about −

7.5V and about 15V, and the light-induced leakage current corresponds to about 1.3V.

11. The light sensing element of claim 9, further comprising an amorphous silicon layer disposed between the first and second electrodes.

12. A light sensing element comprising:

a first electrode receiving an alternating bias voltage;

a control electrode electrically connected to the first electrode; and

a second electrode outputting a light-induced leakage current based on an externally provided light and the bias voltage.

13. The light sensing element of claim 12, wherein the bias voltage alternates between about −

7.5V and about 15V, and the light-induced leakage current corresponds to about 1.3V.

14. The light sensing element of claim 12, further comprising an amorphous silicon layer disposed between the first and second electrodes.

15. An array substrate comprising:

a transparent substrate;

a gate line disposed on the transparent substrate to transmit a gate signal;

a data line disposed on the transparent substrate to transmit a data signal;

a switching element formed in a region defined by the gate and data lines, a gate electrode of the switching element being electrically connected to the gate line, a source electrode of the switching element being electrically connected to the data line;

a read out line disposed on the transparent substrate; and

a light sensing element formed in a region defined by the gate, data and read out lines to include a first electrode receiving an alternating bias voltage, a control electrode receiving an off voltage, and a second electrode outputting a light-induced leakage current to the read out line based on an externally provided light and the bias voltage.

16. The array substrate of claim 15, further comprising a first voltage line transmitting the bias voltage.

17. The array substrate of claim 16, further comprising a second voltage line transmitting the off voltage.

18. The array substrate of claim 15, wherein the light sensing element comprises an amorphous thin film transistor.

19. The array substrate of claim 15, further comprising a reflection plate defining a reflection region that reflects a natural light and an opening window transmitting an artificial light, and wherein the read out line and the light sensing element are disposed in the reflection region.

20. An array substrate comprising:

a transparent substrate;

a gate line disposed on the transparent substrate to transmit a gate signal;

a data line disposed on the transparent substrate to transmit a data signal;

a switching element formed in a region defined by the gate and data lines, a gate electrode of the switching element being electrically connected to the gate line, a source electrode of the switching electrode being electrically connected to the data line;

a read out line disposed on the transparent substrate; and

a light sensing element formed in a region defined by the gate, data and read out lines to include a first electrode receiving an alternating bias voltage, a control electrode and a second electrode electrically connected to the control electrode, the second electrode outputting a light-induced leakage current to the read out line based on an externally provided light and the bias voltage.

21. The array substrate of claim 20, further comprising a first voltage line receiving the bias voltage.

22. The array substrate of claim 20, wherein the first electrode is electrically connected to the gate line.

23. An array substrate comprising:

a transparent substrate;

a gate line disposed on the transparent substrate to transmit a gate signal;

a data line disposed on the transparent substrate to transmit a data signal;

a switching element formed in a region defined by the gate and data lines, a gate electrode of the switching element being electrically connected to the gate line, a source electrode of the switching element being electrically connected to the data line;

a read out line disposed on the transparent substrate; and

a light sensing element formed in a region defined by the gate, data and read out lines to include a first electrode receiving an alternating bias voltage, a control electrode electrically connected to the first electrode and a second electrode outputting a light-induced leakage current to the read out line based on an externally provided light and the bias voltage.

24. The array substrate of claim 23, further comprising a first voltage line receiving the bias voltage.

25. A liquid crystal display apparatus comprising:

an upper substrate;

a lower substrate corresponding to the upper substrate to include a light sensing element formed in a region defined by gate, data and read out lines, the light sensing element having a first electrode receiving an alternating bias voltage, a control electrode receiving an off voltage and a second electrode outputting a light-induced leakage current to the read out line based on an externally provided light and the bias voltage; and

a liquid crystal layer interposed between the upper and lower substrates.

26. A liquid crystal display apparatus comprising:

an upper substrate;

a lower substrate corresponding to the upper substrate to include a light sensing element formed in a region defined by gate, data and read out lines, the light sensing element having a first electrode receiving an alternating bias voltage, a control electrode and a second electrode electrically connected to the control electrode, the second electrode outputting a light-induced leakage current to the read out line based on an externally provided light and the bias voltage; and

a liquid crystal layer interposed between the upper and lower substrates.

27. A liquid crystal display apparatus comprising:

an upper substrate;

a lower substrate corresponding to the upper substrate to include a light sensing element formed in a region defined by gate, data and read out lines, the light sensing element having a first electrode receiving an alternating bias voltage, a control electrode electrically connected to the first electrode and a second electrode outputting a light-induced leakage current to the read out line based on an externally provided light and the bias voltage; and

a liquid crystal layer interposed between the upper and lower substrates.