Liquid crystal display and manufacturing method of the same

• US 20050117080A1
• Filed: 12/06/2004
• Published: 06/02/2005
• Est. Priority Date: 12/23/2000
• Status: Active Grant

• Current Assignee: LG Philips LCD Company Limited (LG Display Co., Ltd.)
• Original Assignee: LG Display Co., Ltd.
• Inventors: Lee, Joun Ho
• Granted Patent: US 7,348,196 B2
• Time in Patent Office: Days
• US Class Current: 349/43
• CPC Class Codes: G02F 1/1362 Active matrix addressed cells G02F1/134336, G02F1/134363 take precedence

Abstract

A liquid crystal display includes a plurality of gate lines (GØ-Gn), a plurality of data lines (D1-Dn) formed in a direction crossing the gate lines, a plurality of pixel electrodes formed in a pixel area defined by the gate lines and the data lines, the pixel electrodes indicating pictures by a control of the corresponding gate lines, and a light volume adjusting layer formed on a lower layer of the pixel electrodes controlled by a second one of the gate lines (G1). A method for manufacturing a liquid crystal display includes the steps of: forming gate lines and a gate electrode on a substrate, forming a gate insulating film on the board including the gate electrode, forming a first active layer on the gate insulating film corresponding to an upper portion of the gate electrode and forming a second active layer on the gate insulating film corresponding to a portion where pixel electrodes are formed, forming source/drain electrodes on an upper portion of the first active layer, and forming a passivation film on the whole surface of the active layer including the source/drain electrodes.

Claims

1-3. -3. (canceled)

4. A method for manufacturing a liquid crystal display, the method comprising:

forming gate lines and a gate electrode on a substrate;

forming a gate insulating film on the substrate, including the gate electrode;

forming a first active layer on the gate insulating film corresponding to an upper portion of the gate electrode and forming a second active layer on the gate insulating film corresponding to a portion where pixel electrodes are to be formed;

forming source/drain electrodes on an upper portion of the first active layer; and

forming a passivation film on the whole surface of the active layer including the source/drain electrodes.

5. The method as claimed in claim 4, wherein the first and second active layers are amorphous silicon layers.

6. The method as claimed in claim 4, wherein a thickness of the second active layer is changed according to the transmission of light.

7. The method as claimed in claim 6, wherein the second active layer is adjusted in area according to an etching speed.

8-16. -16. (canceled)