Method of detecting, identifying and correcting process performance

• US 20050118812A1
• Filed: 12/31/2002
• Published: 06/02/2005
• Est. Priority Date: 12/31/2001
• Status: Abandoned Application

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Donohue, John, Yue, Hongyu
• Application Number:
  US10/498,819
• Publication Number:
  US 20050118812A1
• Time in Patent Office: Days
• US Class Current: 438/689
• CPC Class Codes: G05B 19/41875 characterised by quality surveillance of production
• CPC Class Codes: G05B 2219/32018 Adapt process as function of results of quality measuring until maximum quality
• CPC Class Codes: G05B 2219/32201 Build statistical model of past normal proces, compare with actual process
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01L 22/20 Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
• CPC Class Codes: Y02P 90/02 Total factory control, e.g. smart factories, flexible manufacturing systems [FMS] or integrated manufacturing systems [IMS]

Abstract

A method for material processing utilizing a material processing system (1) to perform a process. The method a process, measures a scan of data, and transforms the data scan into a signature including at least one spatial component. The scan of data can include a process performance parameter (14) such as an etch rate, an etch selectivity, a deposition rate, a film property, etc. A relationship can be determined between the measured signature and a set of at least one controllable process parameter (12) using multivariate analysis, and this relationship can be utilized to improve the scan of data corresponding to a process performance parameter. For example, utilizing this relationship to minimize the spatial components of the scan of data can affect an improvement in the process uniformity.

Claims

1. A method of characterizing a material processing system, the method comprising the steps of:

a) varying a controllable process parameter associated with a process performed by said material processing system;

b) measuring a scan of data, said scan of data comprising a measurement of a process performance parameter when said process is performed using the varied controllable process parameter;

c) transforming said scan of data into a number of spatial components; and

d) characterizing said material processing system by identifying a process signature, said process signature comprising at least one of said spatial components.

2. The method according to claim 1, wherein the method further comprises the steps of:

e) varying an additional controllable process parameter associated with said process performed by said material processing system;

f) measuring an additional scan of data, said additional scan of data comprising a measurement of said process performance parameter when said process is performed using the additional varied controllable process parameter;

g) transforming said additional scan of data into an additional number of spatial components; and

h) re-characterizing said material processing system by including an additional process signature comprising said additional number of spatial components.

3. The method according to claim 2, wherein the method further comprises the step of:

i) repeating step e) through step h) at least once.

4. The method according to claim 3, wherein the re-characterizing step comprises building a data matrix, wherein a first column comprises the number of spatial components and additional columns comprise the additional number of spatial components.

5. The method according to claim 1, wherein the method further comprises the steps of:

e) determining a relationship between said process signature and a controllable process parameter; and

f) adjusting said controllable process parameter, wherein said adjusting comprises utilizing said relationship between said signature and said controllable process parameter to affect an improvement to said scan of data.

6. The method according to claim 3, wherein the method further comprises the steps of:

j) determining inter-relationships between the variations in the controllable process parameters and the spatial components using multivariate analysis; and

k) adjusting at least one controllable process parameter, wherein said adjusting comprises utilizing said inter-relationships to affect an improvement to said process.

7. The method according to claim 1, wherein the method further comprises the steps of:

e) comparing said process signature with an ideal signature for said process, wherein said comparing comprises determining a difference signature; and

f) minimizing said difference signature by adjusting said controllable process parameter, wherein said adjusting comprises utilizing said relationship between said signature and said controllable process parameter.

8. The method according to claim 4, wherein the method further comprises the steps of:

j) comparing said data matrix with an ideal matrix for said material processing system, wherein said comparing comprises determining at least one difference signature;

k) determining at least one inter-relationship between a difference signature and at least one controllable process parameter; and

l) minimizing said difference signature by adjusting said at least one controllable process parameter, wherein said adjusting comprises utilizing said at least one inter-relationship between said difference signature and said at least one controllable process parameter.

9. The method according to claim 1, wherein said process comprises processing a substrate.

10. The method according to claim 9, wherein said substrate is at least one of a wafer or a liquid crystal display.

11. The method according to claim 1, wherein said process performance parameter is at least one of etch rate, deposition rate, etch selectivity, etch feature anisotropy, etch feature critical dimension, film property, plasma density, ion energy, concentration of chemical specie, temperature, pressure, mask film thickness, and mask pattern critical dimension.

12. The method according to claim 1, wherein said number of spatial components are Fourier harmonics.

13. The method according to claim 6, wherein said multivariate analysis comprises principal components analysis.

14. The method according to claim 6, wherein said multivariate analysis comprises design of experiment.

15. The method according to claim 1, wherein said controllable process parameter comprises at least one of process pressure, RF power, gas flow rate, cooling gas pressure, focus ring, electrode spacing, temperature, film material viscosity, film material surface tension, exposure intensity, and depth of focus.

16. The method according to claim 1, wherein said scan of data is a multi-dimensional scan of data.

17. The method according to claim 6, wherein said improvement comprises an improvement of a spatial uniformity of said scan of data.

18. The method according to claim 6, wherein said improvement comprises an improvement of a temporal uniformity of said scan of data.

19. The method according to claim 6, wherein said improvement comprises a minimization of at least one spatial component.

20. A method of improving a process, the method comprising the steps of

measuring a scan of data, said scan of data comprising a measurement of at least one process performance parameter,

transforming said scan of data into a number of spatial components, identifying a process signature, said signature comprising at least one spatial component,

determining a relationship between said signature and at least one controllable process parameter, said at least one controllable process parameter being measurable during said process, and

adjusting said at least one controllable process parameter, wherein said adjusting comprises utilizing said relationship between said signature and said at least one controllable process parameter to affect an improvement to said scan of data.

21. The method according to claim 20, wherein said at least one process performance parameter is at least one of etch rate, deposition rate, etch selectivity, etch feature anisotropy, etch feature critical dimension, film property, plasma density, ion energy, concentration of chemical specie, temperature, pressure, mask film thickness, and mask pattern critical dimension.

22. The method according to claim 20, wherein said at least one spatial component is a Fourier harmonic.

23. The method according to claim 20, wherein said determining said relationship between said signature and said set of controllable process parameters comprises a multivariate analysis.

24. The method according to claim 23, wherein said multivariate analysis comprises principal components analysis.

25. The method according to claim 23, wherein said multivariate analysis comprises design of experiment.

26. The method according to claim 20, wherein said at least one controllable process parameter comprises at least one of process pressure, RF power, gas flow rate, cooling gas pressure, focus ring, electrode spacing, temperature, film material viscosity, film material surface tension, exposure intensity, and depth of focus.

27. The method according to claim 20, wherein said improvement comprises an improvement of a spatial uniformity of said scan of data.

28. The method according to claim 20, wherein said improvement comprises a minimization of at least one spatial component.

29. The method according to claim 20, wherein said scan of data is a multi-dimensional scan of data.

30. The method according to claim 20, wherein said improvement comprises an improvement of a temporal uniformity of said scan of data.

31. A method of material processing, the method comprising the steps of

performing a process,

measuring a scan of data, said scan of data comprising a measurement of at least one process performance parameter,

transforming said scan of data into a number of spatial components,

identifying a signature of said process, said signature comprising at least one spatial component,

determining a relationship between said signature and at least one controllable process parameter, said at least one controllable process parameter being measurable during said process, and

adjusting said at least one controllable process parameter, wherein said adjusting comprises utilizing said relationship between said signature and said at least one controllable process parameter to affect an improvement to said scan of data.

32. The method according to claim 31, wherein said performing a process comprises processing a substrate.

33. The method according to claim 32, wherein said substrate is at least one of a wafer and a liquid crystal display.

34. The method according to claim 31, wherein said at least one process performance parameter is at least one of etch rate, deposition rate, etch selectivity, etch feature anisotropy, etch feature critical dimension, film property, plasma density, ion energy, concentration of chemical specie, temperature, pressure, mask film thickness, and mask pattern critical dimension.

35. The method according to claim 31, wherein said plurality of spatial components are Fourier harmonics.

36. The method according to claim 31, wherein said determining said relationship between said signature and said set of controllable process parameters comprises a multivariate analysis.

37. The method according to claim 36, wherein said multivariate analysis comprises principal components analysis.

38. The method according to claim 36, wherein said multivariate analysis comprises design of experiment.

39. The method according to claim 31, wherein said at least one controllable process parameter comprises at least one of process pressure, RF power, gas flow rate, cooling gas pressure, focus ring, electrode spacing, temperature, film material viscosity, film material surface tension, exposure intensity, and depth of focus.

40. The method according to claim 31, wherein said improvement comprises an improvement of a spatial uniformity of said scan of data.

41. The method according to claim 31, wherein said improvement comprises a minimization of at least one spatial component.

42. The method according to claim 31, wherein said scan of data is a multi-dimensional scan of data.

43. The method according to claim 31, wherein said improvement comprises an improvement of a temporal uniformity of said scan of data.

44. A system for material processing, the system comprising

process chamber,

device for measuring and adjusting at least one controllable process parameter,

device for measuring at least one process performance parameter, and

controller, said controller capable of performing a process, measuring a scan of data using said device for measuring at least one controllable process parameter, said scan of data comprising a measurement of a process performance parameter, transforming said scan of data into a number of spatial components, identifying a signature of said process, said signature comprising at least one spatial component, determining a relationship between said signature and at least one controllable process parameter,

said at least one controllable process parameter being measurable during said process,

and adjusting said at least one controllable process parameter, wherein said adjusting comprises utilizing said relationship between said signature and said at least one controllable process parameter to affect an improvement to said scan of data.

45. The system according to claim 44, wherein said process chamber is an etch chamber.

46. The system according to claim 44, wherein said process chamber is a deposition chamber comprising at least one of chemical vapor deposition and physical vapor deposition.

47. The system according to claim 44, wherein said process chamber is a photoresist coating chamber.

48. The system according to claim 44, wherein said process chamber is a dielectric coating chamber comprising at least one of a spin-on-glass system and a spin-on-dielectric system.

49. The system according to claim 44, wherein said process chamber is a photoresist patterning chamber.

50. The system according to claim 49, wherein said photoresist patterning chamber is an ultraviolet lithography system.

51. The system according to claim 44, wherein said process chamber is a rapid thermal processing chamber.

52. The system according to claim 44, wherein said process chamber is a batch diffusion furnace.

53. A system for material processing, the system comprising process chamber,

device for measuring and adjusting at least one controllable process parameter,

device for measuring at least one process performance parameter, and

controller, said controller capable of performing a process, measuring a scan of data,

said scan of data comprising a measurement of at least one process performance parameter, transforming said scan of data into a number of spatial components, determining a signature of said process, said signature comprising at least one spatial component, determining a relationship between said signature and at least one controllable process parameter, said at least one controllable process parameter measurable during said process, comparing said signature of said process with an ideal signature for said process, wherein said comparing comprises determining a difference signature, and adjusting said at least one controllable process parameter,

wherein said adjusting comprises utilizing said relationship between said signature and said set of controllable process parameters to affect a minimization of said difference signature.

54. The system according to claim 53, wherein said process chamber is an etch chamber.

55. The system according to claim 53, wherein said process chamber is a deposition chamber comprising at least one of chemical vapor deposition and physical vapor deposition.

56. The system according to claim 53, wherein said process chamber is a photoresist coating chamber.

57. The system according to claim 53, wherein said process chamber is a dielectric coating chamber comprising at least one of a spin-on-glass system and a spin-on-dielectric system.

58. The system according to claim 53, wherein said process chamber is a photoresist patterning chamber.

59. The system according to claim 58, wherein said photoresist patterning chamber is an ultraviolet lithography system.

60. The system according to claim 53, wherein said process chamber is a rapid thermal processing chamber.

61. The system according to claim 53, wherein said process chamber is a batch diffusion furnace.