Methods of operation of a memory device and system
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Abstract
Methods of operation of a memory device and system are provided in embodiments. Initialization operations are conducted at a first frequency of operation during an initialization sequence. Memory access operations are then performed at a second frequency of operation. The second frequency of operation is higher than the first frequency of operation. Also, the memory access operations include a read operation and a write operation. In an embodiment, information that represents the first frequency of operation and the second frequency of operation is read from a serial presence detect device.
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Citations
79 Claims
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1-24. -24. (canceled)
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25. A method of operation of a memory device having an array of memory cells, the method comprising:
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during an initialization sequence, conducting initialization operations at a first frequency of operation; and
performing memory access operations at a second frequency of operation, wherein the second frequency is higher than the first frequency, wherein the memory access operations include a read operation and a write operation. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42)
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43. A method of controlling a memory device, the method comprising:
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providing to the memory device during an initialization sequence, commands to conduct initialization operations at a first frequency of operation; and
providing a command to the memory device that specifies a memory access operation, wherein the memory access operation is conducted at a second frequency of operation, wherein the second frequency is higher than the first frequency. - View Dependent Claims (44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55)
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56. A method of operation in a system that includes a memory module having a serial presence detect device and a memory device, the method comprising:
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reading from the serial presence detect device, information that represents a first clock frequency used to conduct memory access operations, and a second clock frequency used to conduct initialization operations;
providing a command, at a first clock frequency, to the memory device during an initialization operation; and
providing commands to the memory device that specify memory access operations, wherein the memory access operations are conducted at the second clock frequency. - View Dependent Claims (57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67)
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68. A method of initializing a memory device included on a memory module, the method comprising:
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providing a command, at a first clock frequency, to the memory device during an initialization operation;
reading from a storage area located on the memory module, information that represents a timing parameter that pertains to the memory device;
converting the information that represents the timing parameter to a value expressed in terms of a number of clock cycles at a second clock frequency; and
providing the value to the memory device, wherein the memory device stores the value in a register to configure the memory device for memory access operations at the second clock frequency. - View Dependent Claims (69, 70, 71, 72, 73, 74, 75, 76, 77, 78)
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79. A method of operation of a memory device having an array of memory cells, the method comprising:
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step for conducting initialization operations at a first frequency of operation; and
step for performing memory access operations at a second frequency of operation, wherein the second frequency is higher than the first frequency, wherein the memory access operations include a read operation and a write operation.
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Specification