Wiring substrate, semiconductor device, and method for manufacturing thereof

• US 20050121675A1
• Filed: 10/27/2004
• Published: 06/09/2005
• Est. Priority Date: 10/28/2003
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Maekawa, Shinji, Arai, Yasuyuki
• Granted Patent: US 8,263,983 B2
• Time in Patent Office: Days
• US Class Current: 257/72
• CPC Class Codes: G02F 1/136295 Materials; Compositions; Manufacture processes
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 27/1292 using liquid deposition, e.g. printing
• CPC Class Codes: H05K 2201/0116 Porous, e.g. foam
• CPC Class Codes: H05K 2203/013 Inkjet printing, e.g. for printing insulating material or resist
• CPC Class Codes: H05K 3/1208 Pretreatment of the circuit board, e.g. modifying wetting properties; Patterning by using affinity patterns providing shape patterns H05K3/1258; adhesion treatments H05K3/38
• CPC Class Codes: H05K 3/125 by ink-jet printing
• CPC Class Codes: H05K 3/38 Improvement of the adhesion between the insulating substrate and the metal
• CPC Class Codes: H05K 3/386 by the use of an organic polymeric bonding layer, e.g. adhesive

Abstract

It is an object of the present invention to provide a technique for forming a thin wiring in forming a pattern such as wiring by discharging a droplet. In the present invention, a porous (including microporous) substance is formed as a base film in forming pattern by using a droplet discharge method (also referred to as an ink-jetting method). One feature of a wiring substrate according to the present invention provides a porous film and a conductive layer thereon. One feature of a semiconductor device of the present invention provides a thin film transistor in which a gate electrode is formed by the conductive layer having the above-described structure.

Claims

1. A wiring substrate comprising:

a porous film; and

a conductive layer on the porous film.

2. A wiring substrate according to claim 1, wherein the porous film and the conductive layer are laminated on the same region.

3. A wiring substrate according to claim 1,

wherein the porous film has pores,

wherein the conductive layer comprises a conductive material, and

wherein at least one pore is filled with the conductive material.

4. A wiring substrate according to claim 1, wherein the porous film comprises a material selected from the group consisting of an organic material, a porous material having a skeleton by a bond of silicon and oxygen, a porous organic resin material, and a porous silica material.

5. A wiring substrate according to claim 1, wherein the conductive layer comprises one of Ag, Au, Cu, and indium tin oxide.

6. A semiconductor device having a wiring substrate according to claim 1, wherein the conductive layer is used as a gate electrode of a thin film transistor.

7. A camera having a wiring substrate according to claim 1.

8. A personal digital assistant having a wiring substrate according to claim 1.

9. A personal computer having a wiring substrate according to claim 1.

10. A cellular phone having a wiring substrate according to claim 1.

11. A television set having a wiring substrate according to claim 1.

12. A wiring substrate comprising:

an insulating layer;

a porous film over the insulating layer; and

a conductive layer on the porous film.

13. A wiring substrate according to claim 12, wherein the porous film and the conductive layer are laminated on the same region.

14. A wiring substrate according to claim 12,

wherein the porous film has pores,

wherein the conductive layer comprises a conductive material, and

wherein at least one pore is filled with the conductive material.

15. A wiring substrate according to claim 12, wherein the porous film comprises a material selected from the group consisting of an organic material, a porous material having a skeleton by a bond of silicon and oxygen, a porous organic resin material, and a porous silica material:

16. A wiring substrate according to claim 12, wherein the conductive layer comprises one of Ag, Au, Cu, and indium tin oxide.

17. A semiconductor device having a wiring substrate according to claim 12, wherein the conductive layer is used as a gate electrode of a thin film transistor.

18. A camera having a wiring substrate according to claim 12.

19. A personal digital assistant having a wiring substrate according to claim 12.

20. A personal computer having a wiring substrate according to claim 12.

21. A cellular phone having a wiring substrate according to claim 12.

22. A television set having a wiring substrate according to claim 12.

23. A wiring substrate comprising:

a first insulating layer;

a porous film over the first insulating layer;

a conductive layer on the porous film; and

a second insulating layer that covers the porous film and the conductive layer.

24. A wiring substrate according to claim 23, wherein the porous film and the conductive layer are laminated on the '"'"'same region.

25. A wiring substrate according to claim 23,

wherein the porous film has pores,

wherein the conductive layer comprises a conductive material, and

wherein at least one pore is filled with the conductive material.

26. A wiring substrate according to claim 23, wherein the porous film comprises a material selected from the group consisting of an organic material, a porous material having a skeleton by a bond of silicon and oxygen, a porous organic resin material, and a porous silica material.

27. A wiring substrate according to claim 23, wherein at least one of the first insulating layer and the second insulating layer comprises one of an oxide material and a nitride material of silicon.

28. A wiring substrate according to claim 23, wherein the conductive layer comprises one of Ag, Au, Cu, and indium tin oxide.

29. A semiconductor device having a wiring substrate according to claim 23, wherein the conductive layer is used as a gate electrode of a thin film transistor.

30. A camera having a wiring substrate according to claim 23.

31. A personal digital assistant having a wiring substrate according to claim 23.

32. A personal computer having a wiring substrate according to claim 23.

33. A cellular phone having a wiring substrate according to claim 23.

34. A television set having a wiring substrate according to claim 23.

35. A wiring substrate comprising:

a first conductive layer;

a porous film having an opening that reaches the first conductive layer; and

a second conductive layer that is connected to the first conductive layer in the opening.

36. A wiring substrate according to claim 35,

wherein the porous film has pores,

wherein the second conductive layer is formed by a conductive material, and

wherein at least one pore is filled with the conductive material.

37. A wiring substrate according to claim 35, wherein the porous film comprises a material selected from the group consisting of an organic material, a porous material having a skeleton by a bond of silicon and oxygen, a porous organic resin material, and a porous silica material.

38. A wiring substrate according to claim 35, wherein at least one of the first conductive layer and the second conductive layer comprises one of Ag, Au, Cu, and indium tin oxide.

39. A semiconductor device having a wiring substrate according to claim 35, wherein the first conductive layer is used as a gate electrode of a thin film transistor and the second conductive layer is used as at least one of which a source electrode and a drain electrode of the thin film transistor.

40. A camera having a wiring substrate according to claim 35.

41. A personal digital assistant having a wiring substrate according to claim 35.

42. A personal computer having a wiring substrate according to claim 35.

43. A cellular phone having a wiring substrate according to claim 35.

44. A television set having a wiring substrate according to claim 35.

45. A wiring substrate comprising:

a first conductive layer;

an insulating layer over the first conductive layer; and

a porous film over the insulating layer,

wherein the insulating layer and the porous film has an opening that reaches the first conductive layer; and

wherein a second conductive layer that is connected to the first conductive layer in the opening.

46. A wiring substrate according to claim 45,

wherein the porous film has pores;

wherein the second conductive layer is formed by a conductive material; and

wherein at least one pore is filled with the conductive material.

47. A wiring substrate according to claim 45, wherein the porous film comprises a material selected from the group consisting of an organic material, a porous material having a skeleton by a bond of silicon and oxygen, a porous organic resin material, and a porous silica material.

48. A wiring substrate according to claim 45, wherein at least one of the first conductive layer and the second conductive layer comprises one of Ag, Au, Cu, and indium tin oxide.

49. A semiconductor device having a wiring substrate according to claim 45, wherein the first conductive layer is used as a gate electrode of a thin film transistor and the second conductive layer is used as at least one of which a source electrode and a drain electrode of the thin film transistor.

50. A camera having a wiring substrate according to claim 45.

51. A personal digital assistant having a wiring substrate according to claim 45.

52. A personal computer having a wiring substrate according to claim 45.

53. A cellular phone having a wiring substrate according to claim 45.

54. A television set having a wiring substrate according to claim 45.

55. A method for manufacturing a wiring substrate, comprising the steps of:

forming a porous film, and

discharging a composition including a conductive material to form a conductive layer on the porous film.

56. A method according to claim 55, wherein a portion that the porous film is not in contact with the conductive layer is etched.

57. A method according to claim 55,

wherein the porous film is formed to have pores, and

wherein at least one pore is filled with the composition including the conductive material.

58. A method according to claim 55, wherein the porous film comprises a material selected film the group consisting of an organic material, a porous material which has a skeleton formed by a bond of silicon and oxygen, a porous organic resin material, a porous silica material, and the like.

59. A method according to claim 55, wherein the composition includes at least one of Ag, Au, Cu, and indium tin oxide.

60. A method for manufacturing a semiconductor device using a wiring substrate according to claim 55, wherein the conductive layer is used as a gate electrode of a thin film transistor.

61. A method for manufacturing a wiring substrate, comprising the steps of:

forming an insulating layer,

forming a porous film over the insulating-layer, and

discharging a composition including a conductive material to form a conductive layer on the porous film.

62. A method according to claim 61, wherein a portion that the porous film is not in contact with the conductive layer is etched.

63. A method according to claim 61,

wherein the porous film is formed to have pores, and

wherein at least one pore is filled with the composition including the conductive material.

64. A method according to claim 61, wherein the porous film comprises a material selected film the group consisting of an organic material, a porous material which has a skeleton formed by a bond of silicon and oxygen, a porous organic resin material, a porous silica material, and the like.

65. A method according to claim 61, wherein the composition includes at least one of Ag, Au, Cu, and indium tin oxide.

66. A method for manufacturing a semiconductor device using a wiring substrate according to claim 61, wherein the conductive layer is used as a gate electrode of a thin film transistor.

67. A method for manufacturing a wiring substrate, comprising the steps of:

forming a first insulating layer,

forming a porous film over the first insulating layer,

discharging a composition including a conductive material to form a conductive layer on the porous film, and

forming a second insulating layer that covers the porous film and the conductive layer.

68. A method according to claim 67, wherein a portion that the porous film is not in contact with the conductive layer is etched.

69. A method according to claim 67,

wherein the porous film is formed to have pores, and

wherein at least one pore is filled with the composition including the conductive material.

70. A method according to claim 67, wherein the porous film comprises a material selected film the group consisting of an organic material, a porous material which has a skeleton formed by a bond of silicon and oxygen, a porous organic resin material, a porous silica material, and the like.

71. A method according to claim 67, wherein the insulating film comprises one of an oxide material and a nitride material of silicon.

72. A method according to claim 67, wherein the composition includes at least one of Ag, Au, Cu, and indium tin oxide.

73. A method for manufacturing a semiconductor device using a wiring substrate according to claim 67, wherein the conductive layer is used as a gate electrode of a thin film transistor.

74. A method for manufacturing a wiring substrate, comprising the steps of:

forming a first conductive layer,

forming a porous film over the first conductive layer,

forming an opening that reaches the first conductive layer in the porous film,

discharging a composition including a conductive material into the opening, and

forming a second conductive layer to be in contact with the first conductive layer.

75. A method according to claim 74,

wherein the porous film is formed to have pores, and

wherein at least one pore is filled with a composition including a conductive material.

76. A method according to claim 74, wherein the porous film comprises a material selected film the group consisting of an organic material, a porous material which has a skeleton formed by a bond of silicon and oxygen, a porous organic resin material, a porous silica material, and the like.

77. A method according to claim 74, wherein the composition includes at least one of Ag, Au, Cu, and indium tin oxide.

78. A method for manufacturing a semiconductor device using a wiring substrate according to claim 74, wherein the first conductive layer is used as a gate electrode of a thin film transistor and the second conductive layer is used as at least one of which a source electrode and a drain electrode of the thin film transistor.

79. A method for manufacturing a wiring substrate, comprising the steps of:

forming a first conductive layer,

forming an insulating layer over the first conductive layer,

forming a porous film on the insulating layer,

forming an opening that reaches the first conductive layer in the insulating layer and the porous film,

discharging a composition including a conductive material into the opening, and

forming a second conductive layer to be in contact with the first conductive layer.

80. A method according to claim 79,

wherein the porous film is formed to have pores, and

wherein at least one pore is filled with a composition including a conductive material.

81. A method according to claim 79, wherein the porous film comprises a material selected film the group consisting of an organic material, a porous material which has a skeleton formed by a bond of silicon and oxygen, a porous organic resin material, a porous silica material, and the like.

82. A method according to claim 79, wherein the composition includes at least one of Ag, Au, Cu, and indium tin oxide.

83. A method for manufacturing a semiconductor device using a wiring substrate according to claim 79, wherein the first conductive layer is used as a gate electrode of a thin film transistor and the second conductive layer is used as at least one of which a source electrode and a drain electrode of the thin film transistor.