Dynamic threshold voltage MOSFET on SOI
First Claim
1. A field effect transistor comprising a transistor portion comprising a source, drain and gate formed in a semiconductor layer of a first conductivity type, a body contact to said semiconductor layer, and a body control contact of a conductivity type opposite said first conductivity type and interposed between said gate and said body contact.
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Accused Products
Abstract
Provision of a body control contact adjacent a transistor and between the transistor and a contact to the substrate or well in which the transistor is formed allows connection and disconnection of the substrate of the transistor to and from a zero (ground) or substantially arbitrary low voltage in accordance with control signals applied to the gate of the transistor to cause the transistor to exhibit a variable threshold which maintains good performance at low supply voltages and reduces power consumption/dissipation which is particularly advantageous in portable electronic devices. Floating body effects (when the transistor substrate in disconnected from a voltage source in the “on” state) are avoided since the substrate is discharged when the transistor is switched to the “off” state. The transistor configuration can be employed with both n-type and p-type transistors which may be in complementary pairs.
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Citations
20 Claims
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1. A field effect transistor comprising
a transistor portion comprising a source, drain and gate formed in a semiconductor layer of a first conductivity type, a body contact to said semiconductor layer, and a body control contact of a conductivity type opposite said first conductivity type and interposed between said gate and said body contact.
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9. An integrated circuit comprising
a plurality of transistor portions comprising a source, drain and gate formed in a semiconductor layer of a first conductivity type, a body contact to said semiconductor layer, and a body control contact of a conductivity type opposite said first conductivity type and interposed between said gate and said body contact.
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18. A portable electronic device comprising
a portable power supply, and an integrated circuit, said integrated circuit comprising a plurality of transistor portions comprising a source, drain and gate formed in a semiconductor layer of a first conductivity type, a body contact to said semiconductor layer, and a body control contact of a conductivity type opposite said first conductivity type and interposed between said gate and said body contact.
Specification