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Semiconductor device and method of manufacturing thereof

  • US 20050122748A1
  • Filed: 07/22/2004
  • Published: 06/09/2005
  • Est. Priority Date: 12/09/2003
  • Status: Abandoned Application
First Claim
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1. A semiconductor device comprising an insulated gate semiconductor device and a clamping element for providing voltage clamp between a control electrode and a first current electrode of said insulated gate semiconductor device, said insulated gate semiconductor device and said clamping element being formed on the same chip, said semiconductor device comprising:

  • a first terminal formed on said chip, said first terminal being connected to said control electrode of said insulated gate semiconductor device; and

    a second terminal formed on said chip, said second terminal being connected to one end of said clamping element, wherein said first and second terminals are connected through a bonding wire.

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