Semiconductor device and method of manufacturing thereof

• US 20050122748A1
• Filed: 07/22/2004
• Published: 06/09/2005
• Est. Priority Date: 12/09/2003
• Status: Abandoned Application

• Current Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Tomomatsu, Yoshifumi, Tadokoro, Chihiro
• Application Number:
  US10/895,823
• Publication Number:
  US 20050122748A1
• Time in Patent Office: Days
• US Class Current: 363/40
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/4813 Connecting within a semiconductor or solid-state body, i.e. fly wire, bridge wire
• CPC Class Codes: H01L 2224/4911 the connectors being bonded to at least one common bonding area, e.g. daisy chain
• CPC Class Codes: H01L 2224/85399 Material
• CPC Class Codes: H01L 24/06 of a plurality of bonding areas
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01004 Beryllium [Be]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01021 Scandium [Sc]
• CPC Class Codes: H01L 2924/01023 Vanadium [V]
• CPC Class Codes: H01L 2924/01024 Chromium [Cr]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01068 Erbium [Er]
• CPC Class Codes: H01L 2924/01082 Lead [Pb]
• CPC Class Codes: H01L 2924/12035 Zener diode
• CPC Class Codes: H01L 2924/12036 : PN diode
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H03K 17/08128 : in composite switches

Abstract

The gate of an IGBT is connected to a gate terminal. One end of a clamping element is connected to an anode terminal. A voltage higher than a clamping voltage is applied between the gate and the emitter, to thereby test the dielectric breakdown voltage of a gate insulating film of the IGBT. The IGBT is eliminated which has a gate insulating film at a dielectric breakdown voltage failing to fall within its proper distribution range. Thereafter, a gate terminal and an anode terminal are wire bonded in the normal IGBT.

Claims

1. A semiconductor device comprising an insulated gate semiconductor device and a clamping element for providing voltage clamp between a control electrode and a first current electrode of said insulated gate semiconductor device, said insulated gate semiconductor device and said clamping element being formed on the same chip, said semiconductor device comprising:

a first terminal formed on said chip, said first terminal being connected to said control electrode of said insulated gate semiconductor device; and

a second terminal formed on said chip, said second terminal being connected to one end of said clamping element,

wherein said first and second terminals are connected through a bonding wire.

2. The semiconductor device according to claim 1,

wherein said clamping element has a series connection of a plurality of first diodes.

3. The semiconductor device according to claim 2,

wherein said clamping element further has a series connection of a plurality of second diodes, said plurality of second diodes having an inverse-parallel connection to said plurality of first diodes.

4. A method of manufacturing a semiconductor device, said semiconductor device comprising an insulated gate semiconductor device and a clamping element for providing voltage clamp between a control electrode and a first current electrode of said insulated gate semiconductor device, said insulated gate semiconductor device and said clamping element being formed on the same chip, said semiconductor device comprising:

a first terminal formed on said chip, said first terminal being connected to said control electrode of said insulated gate semiconductor device; and

a second terminal formed on said chip, said second terminal being connected to one end of said clamping element,

wherein said first and second terminals are connected through a bonding wire,

said method comprising the steps of;

applying a voltage of a predetermined level between said control electrode and said first current electrode; and

after said step of applying a voltage, providing wire bonding between said first and second terminals.