IMPRINT LITHOGRAPHY FOR SUPERCONDUCTOR DEVICES

• US 20050123674A1
• Filed: 05/05/2003
• Published: 06/09/2005
• Est. Priority Date: 05/05/2003
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.)
• Inventors: Stasiak, James, Kornilovich, Pavel
• Granted Patent: US 6,926,921 B2
• Time in Patent Office: Days
• US Class Current: 427/62
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: G03F 7/0002 Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
• CPC Class Codes: G06N 10/00 Quantum computing, i.e. information processing based on quantum-mechanical phenomena
• CPC Class Codes: H10N 60/0912 of Josephson-effect devices
• CPC Class Codes: H10N 69/00 Integrated devices, or assemblies of multiple devices, comprising at least one superconducting element covered by group H10N60/00
• CPC Class Codes: Y10S 505/702 Josephson junction present
• CPC Class Codes: Y10S 977/933 Spintronics or quantum computing
• CPC Class Codes: Y10T 29/49014 Superconductor

Abstract

One aspect of this disclosure relates to a method of building a superconductor device on a substrate, comprising depositing an imprint layer on at least a portion of the substrate. The imprint layer is imprinted to provide an imprinted portion of the imprint layer and a non-imprinted portion of the imprint layer. A superconductor layer is deposited on at least a portion of the imprinted portion of the imprint layer.

Claims

1. A method of building a superconductor device on a substrate, comprising:

depositing an imprint layer on at least a portion of the substrate;

imprinting the imprint layer to provide at least one imprinted recess in the imprint layer and a non-imprinted portion of the imprint layer that at least partially surrounds the imprinted recess in the imprint layer;

depositing a first superconductor layer in at least a portion of the imprinted recess of the imprint layer;

forming a tunnel junction at least partially in contact with the first superconductor layer; and

depositing a second superconductor layer at least partially in contact with the tunnel junction, wherein at least a portion of the second superconductor layer extends beyond a portion of the imprinted recess of the imprint layer in which the first superconductor layer is deposited, wherein the first superconductor layer, the tunnel junction, and the second superconductor layer combine to form the superconductor device.

2. The method of claim 1, wherein the substrate includes a semiconductor.

3. The method of claim 1, wherein the substrate includes a plastic material.

4. The method of claim 1, wherein the substrate includes a glass.

5. The method of claim 1, wherein the substrate includes a metal film.

6. The method of claim 1, wherein the substrate includes a paper.

7. The method of claim 1, wherein the substrate includes a fabric.

8. The method of claim 1, wherein the substrate is formed from a flexible material, in which the material is flexible at least at room temperature.

9. The method of claim 8, wherein the substrate is flexible at superconducting temperature.

10. The method of claim 8, wherein the substrate includes a paper.

11. The method of claim 8, wherein the substrate includes a fabric.

12. The method of claim 8, wherein the substrate includes a polymer.

13. The method of claim 1, wherein the method uses a high temperature superconductor material.

14. The method of claim 1, wherein the method uses a low temperature superconductor material.

15. The method of claim 1, wherein the first superconductor layer includes a curve.

16. The method of claim 1, wherein the first superconductor layer includes a coil.

17. The method of claim 1, wherein the method produces a Josephson junction.

18. The method of claim 1, wherein the method produces a direct current (DC) superconductor quantum interference device (SQUID).

19. The method of claim 1, wherein the method produces a radio frequency (RF) SQUID.

20. The method of claim 1, wherein the method produces a qubit element.

21. The method of claim 1, wherein the method produces a magnetometer.

22. The method of claim 1, wherein the method produces a gradiometer.

23. The method of claim 1, wherein the method produces a susceptometer.

24. The method of claim 1, wherein the method produces a voltmeter.

25. The method of claim 1, wherein the method produces a radio-frequency amplifier.

26. The method of claim 1, wherein the method produces a gravity-wave antenna.

27. The method of claim 1, wherein the method produces an analog-to-digital converter.

28. The method of claim 1, wherein the method produces a multiplexer.

29. The method of claim 1, wherein the method produces a magnet.

30. The method of claim 1, wherein the method produces a hybrid device, consisting of superconductor and non-superconductor elements.

31. The method of claim 1, wherein the method produces an array of superconductor devices.

35. The method of claim 1, wherein the method produces a portion of a quantum computer.

36. The method of claim 1, further comprising lifting-off the second superconductor layer from the non-imprinted portion of the imprint layer.

37. The method of claim 8, further comprising conforming the substrate to an object to be monitored.

38. The method of claim 37, further comprising testing the object.

39. The method of claim 37, wherein the object is a patient.

32. The method of claim 32, wherein the method produces a substantially one-dimensional array of superconductor devices.

33. The method of claim 32, wherein the method produces a substantially two-dimensional array of superconductor devices.

34. The method of claim 32, wherein the method produces a cross-bar array of superconductor devices.

40. (canceled)

41. A method comprising:

forming a substrate from a flexible material;

depositing an imprint layer on at least a portion of the substrate;

imprinting the imprint layer to provide an imprinted recess within the imprint layer and a non-imprinted portion of the imprint layer that at feast partially surrounds the imprinted recess;

depositing a first superconductor layer in at least a portion of the imprinted region of the imprint layer;

forming a tunnel junction at least partially in contact with the first superconductor layer;

depositing a second superconductor layer at least partially in contact with the tunnel junction, wherein at least a portion of the second semiconductor layer extends above the non-imprinted portion of the imprint layer, wherein the first superconductor layer, the tunnel junction, and the second superconductor layer combine to form the superconductor device; and

lifting-off at least a portion of the superconductor device from at least a portion of the non-imprinted portion of the imprint layer to create the portion of the superconductor device that is separate from the substrate.

42. The method of claim 41, further comprising conforming the substrate to a subject to be monitored.

43. The method of claim 41, further comprising connecting electric control circuitry to the superconductor device.

44. The method of claim 41, further comprising controlling the superconductor device.

45. The method of claim 41, further comprising monitoring the subject with the superconductor device.

46. A computer readable medium having computer executable instructions which when executed by a processor causes the processor to perform steps relative to a substrate, comprising:

depositing an imprint layer on at least a portion of the substrate;

imprinting the imprint layer to provide at least one imprinted recess in the imprint layer and a non-imprinted portion of the imprint layer that at least partially surrounds the imprinted recess in the imprint layer;

depositing a first superconductor layer in at least a portion of the imprinted recess of the imprint layer;

forming a tunnel junction at least partially in contact with the first superconductor layer; and

depositing a second superconductor layer at least partially in contact with the tunnel junction, wherein at least a portion of the second superconductor layer extends outside of the portion of the imprinted recess of the imprint layer in which the first superconductor layer is deposited, wherein the first superconductor layer, the tunnel junction, and the second superconductor layer combine to form the superconductor device.

47. (canceled)