Semiconductor device and method of manufacturing the same
First Claim
1. A semiconductor device provided with a semiconductor substrate, comprising:
- an active element forming region for forming active elements;
an element isolation region for isolating one element from another element;
an underlayer film including nitrogen formed on a predetermined region on the element isolation region, the predetermined region extending from a border of the active element forming region to the element isolation region side; and
a conductive film formed on the active element forming region and the underlayer film.
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Accused Products
Abstract
A semiconductor device and a method of manufacturing the same are provided. An underlayer film including nitrogen is formed on a predetermined region on an element isolation region, the predetermined region extending from a border of an active element forming region to the element isolation region side. Silicon or a mixed crystal of silicon or germanium is selectively formed on the underlayer film. Then the silicon or the mixed crystal of silicon and germanium is turned into a conductive film by ion implantation of a dopant or further making it to be a silicide. Subsequently, the conductive film formed on the element isolation region is electrically connected to an electrical wiring.
9 Citations
13 Claims
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1. A semiconductor device provided with a semiconductor substrate, comprising:
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an active element forming region for forming active elements;
an element isolation region for isolating one element from another element;
an underlayer film including nitrogen formed on a predetermined region on the element isolation region, the predetermined region extending from a border of the active element forming region to the element isolation region side; and
a conductive film formed on the active element forming region and the underlayer film. - View Dependent Claims (2, 3, 4)
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5. A method of manufacturing a semiconductor device provided with a semiconductor substrate on which an element isolation region and an active element forming region are formed, the method comprising:
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forming one of a silicon nitride film and a silicon oxynitride film as an underlayer film on an entire surface of the semiconductor substrate;
removing the underlayer film except in a predetermined region which extends from a border of the active element forming region to the element isolation region side; and
forming a gate part including a gate insulating film and a gate electrode to the active element forming region;
forming a contact region of a source part and a drain part to the active element forming region by ion implantation;
forming a sidewall made of an insulating film to a side face of the gate part; and
performing a vapor phase selective epitaxial growth including;
forming one of a single crystal silicon film and a single crystal film made of mixed crystal of silicon and germanium to the source part and the drain part; and
forming one of a polysilicon film and a polycrystal film made of the mixed crystal of silicon and germanium on the one of the silicon nitride film and the silicon oxynitride film. - View Dependent Claims (11, 12, 13)
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6. A method of manufacturing a semiconductor device provided with a semiconductor substrate on which an element isolation region and an active element forming region are formed, the method comprising:
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forming a gate part including a gate insulating film and a gate electrode to the active element forming region;
forming one of a silicon nitride film and a silicon oxynitride film as an underlayer film on an entire surface of the semiconductor substrate;
removing the underlayer film except in a predetermined region which extends from a border of the active element forming region to the element isolation region side;
forming a contact region of a source part and a drain part to the active element forming region by ion implantation;
forming a sidewall made of an insulating film to a side face of the gate part; and
performing a vapor phase selective epitaxial growth including;
forming one of a single crystal silicon film and a single crystal film made of mixed crystal of silicon and germanium to the source part and the drain part; and
forming one of a polysilicon film and a polycrystal film made of the mixed crystal of silicon and germanium on the one of silicon nitride film and the silicon oxynitride film.
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7. A method of manufacturing a semiconductor device provided with a semiconductor substrate in which a silicon nitride film is formed on an element isolation region and an active element forming region, the method comprising:
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removing photoresist formed on a desired region on the element isolation region and the silicon nitride film to form an opening by a photolithography method;
implanting a nitrogen ion into an entire surface of the semiconductor substrate so as to form a nitrogen ion implanted region to the element isolation region in the opening;
removing the photoresist and the silicon nitride film;
forming a gate part including a gate insulating film and a gate electrode to the active element forming region;
forming a contact region of a source part and a drain part to the active element forming region by ion implantation;
forming a sidewall to a side face of the gate part; and
performing a vapor phase selective epitaxial growth including;
forming one of a single crystal silicon film and a single crystal film made of mixed crystal of silicon and germanium to the source part and the drain part; and
forming one of a polysilicon film and a polycrystal film made of the mixed crystal of silicon and germanium on the nitrogen ion implanted region.
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8. A method of manufacturing a semiconductor device provided with a semiconductor substrate on which an element isolation region and an active element forming region are formed, the method comprising:
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forming one of a silicon nitride film and a silicon oxynitride film as an underlayer film on an entire surface of the semiconductor substrate;
removing the underlayer film except in a predetermined region which extends from a border of the active element forming region to the element isolation region side;
forming a gate part including a gate insulating film and a gate electrode made of a metal element to the active element forming region;
forming a contact region of a source part and a drain part to the active element forming region by ion implantation;
forming a sidewall made of an insulating film to a side face of the gate part;
performing a vapor phase selective epitaxial growth in a range of 500 degrees centigrade or more to 600 degrees centigrade or less, the vapor phase selective epitaxial growth including;
forming single crystal silicon to the source part and the drain part; and
forming polysilicon on the one of the silicon nitride film and the silicon oxynitride film; and
performing a vapor phase selective epitaxial growth in a range of 500 degrees centigrade or more to 600 degrees centigrade or less, the vapor phase selective epitaxial growth including;
forming a single crystal film made of mixed crystal of silicon and germanium on the single crystal silicon film; and
forming a polycrystal film made of mixed crystal of silicon and germanium on the polysilicon film.
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9. A method of manufacturing a semiconductor device provided with a semiconductor substrate on which an element isolation region and an active element forming region are formed, the method comprising:
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forming a gate part including a gate insulating film and a gate electrode made of a metal element to the active element forming region;
forming one of a silicon nitride film and a silicon oxynitride film as an underlayer film on an entire surface of the semiconductor substrate;
removing the underlayer film except in a predetermined region which extends from a border of the active element forming region to the element isolation region side;
forming a contact region of a source part and a drain part to the active element forming region by ion implantation;
forming a sidewall made of an insulating film to a side face of the gate part;
performing a vapor phase selective epitaxial growth at a range of 500 degrees centigrade or more to 600 degrees centigrade or less, the vapor phase selective epitaxial growth including;
forming single crystal silicon to the source part and the drain part; and
forming polysilicon on the one of the silicon nitride film and the silicon oxynitride film; and
performing a vapor phase selective epitaxial growth at a range of 500 degrees centigrade or more to 600 degrees centigrade or less, the vapor phase selective epitaxial growth including;
forming a single crystal film made of mixed crystal of silicon and germanium on the single crystal silicon film; and
forming a polycrystal film made of the mixed crystal of silicon and germanium on the polysilicon film.
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10. A method of manufacturing a semiconductor device provided with a semiconductor substrate in which a silicon nitride film is formed on an element isolation region and an active element forming region, the method comprising:
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removing photoresist formed on a desired region of the element isolation region and the silicon nitride film to form an opening by a photolithography method;
implanting a nitrogen ion into an entire surface of the semiconductor substrate so as to form a nitrogen ion implanted region to the element isolation region in the opening;
removing the photoresist and the silicon nitride film;
forming a gate part including a gate insulating film and a gate electrode made of a metal element to the active element forming region;
forming a contact region of a source part and a drain part to the active element forming region by ion implantation;
forming a sidewall to a side face of the gate part;
performing a vapor phase selective epitaxial growth at a range of 500 degrees centigrade or more to 600 degrees centigrade or less, the vapor phase selective epitaxial growth including;
forming single crystal silicon to the source part and the drain part; and
forming polysilicon on one of the silicon nitride film and the silicon oxynitride film; and
performing a vapor phase selective epitaxial growth at a range of 500 degrees centigrade or more to 600 degrees centigrade or less, the vapor phase selective epitaxial growth including;
forming a single crystal film made of mixed crystal of silicon and germanium on the single crystal silicon film; and
forming a polycrystal film made of the mixed crystal of silicon and germanium on the polysilicon film.
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Specification