Method and circuit for multiplying signals with a transistor having more than one independent gate structure
First Claim
1. A method for multiplying a first signal and a second signal, comprising:
- providing a substrate and a semiconductor structure over the substrate, the seniiconductor structure having a first sidewall, a second sidewall, and a top surface;
depositing at least one substantially conformal layer over the substrate, wherein the at least one substantially conformal layer comprises at least a layer of gate material, wherein the at least one substantially conformal layer has a top surface at a height over the semiconductor structure;
forming a substantially planar layer over the substrate below the height of the top surface of the at least one substantially conformal layer over the semiconductor structure;
non-abrasively etching through the layer of gate material over the lop surface of the semiconductor structure;
patterning the at least one substantially conformal layer to form a gate structure prior to the forming the substantially planar layer over the substrate, wherein the non-abrasive etching through the layer of gate material over the top surface of the semiconductor structure further includes etching through the layer of gate material of the gate structure over the top surface of the semiconductor structure to form a first gate portion and a second gate portion that are electrically isolated;
forming symmetrical source and drain regions relative to the first and second gate portions such that a channel region will be formed under the first and second gates during operation of the semiconductor structure, wherein there exists plane parallel to the substrate, and wherein a portion of each of the source region, the drain region and the channel region are within the plane;
applying the first signal to the first gate portion, wherein the first signal is time-varying; and
applying the second signal to the second gate portion, wherein the second signal is time-varying.
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Accused Products
Abstract
A double gate semiconductor device (2006) is used beneficially as a multiplier (2000). The double gate semiconductor device (2006) has a lateral fin (105) as the channel region with the gates formed opposite each other on both sides of the fin. The lateral positioning of the fin provides symmetry between the two gates. To increase drive current, multiple transistors are easily connected in parallel by having a continuous fin structure (2106) with alternating source/drain terminals (2120, 2122, 2124, 2126) in which the sources are connected together and the drains are connected together. Gates (2116, 2110) are positioned between each pair of adjacent source/drain terminals and electrically connected together. The multiplier (2000) may also be used as a mixer and further as a phase detector.
262 Citations
31 Claims
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1. A method for multiplying a first signal and a second signal, comprising:
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providing a substrate and a semiconductor structure over the substrate, the seniiconductor structure having a first sidewall, a second sidewall, and a top surface;
depositing at least one substantially conformal layer over the substrate, wherein the at least one substantially conformal layer comprises at least a layer of gate material, wherein the at least one substantially conformal layer has a top surface at a height over the semiconductor structure;
forming a substantially planar layer over the substrate below the height of the top surface of the at least one substantially conformal layer over the semiconductor structure;
non-abrasively etching through the layer of gate material over the lop surface of the semiconductor structure;
patterning the at least one substantially conformal layer to form a gate structure prior to the forming the substantially planar layer over the substrate, wherein the non-abrasive etching through the layer of gate material over the top surface of the semiconductor structure further includes etching through the layer of gate material of the gate structure over the top surface of the semiconductor structure to form a first gate portion and a second gate portion that are electrically isolated;
forming symmetrical source and drain regions relative to the first and second gate portions such that a channel region will be formed under the first and second gates during operation of the semiconductor structure, wherein there exists plane parallel to the substrate, and wherein a portion of each of the source region, the drain region and the channel region are within the plane;
applying the first signal to the first gate portion, wherein the first signal is time-varying; and
applying the second signal to the second gate portion, wherein the second signal is time-varying. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method of multiplying a first signal and a second signal, comprising:
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providing a substrate having a semiconductor structure over the substrate, the semiconductor structure having a first sidewall, a second sidewall, and a top surface;
forming a first dielectric layer on the semiconductor structure;
depositing a first substantially conformal layer of gate material over the substrate after forming the first dielectric layer;
forming a second substantially conformal layer of a material different from the first substantially conformal layer over the first substantially conformal layer;
depositing a substantially planar layer over the substrate after depositing the second substantially conformal layer;
etching through the first substantially conformal layer and the second substantially conformal layer over the top surface of the semiconductor structure to result in a first portion of the first substantially conformal layer on the first sidewall of the semiconductor structure and extending over a first portion of the substrate and a second portion of the first substantially conformal layer on the second sidewall of the semiconductor structure and extending over a second portion of the substrate, wherein the first and second portions are electrically isolated from each other;
forming symmetrical source and drain regions relative to the first and second portions such that a channel region will be formed under the first and second gates during operation of the semiconductor structure, wherein there exists a plane parallel to the substrate, and wherein a portion of each of the source region, the drain region and the channel region are within the plane;
applying the first signal to the first portion; and
applying the second signal to the second portion. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25)
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26. A method of forming a semiconductor structure, comprising:
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providing a substrate;
forming a semiconductor fin on the substrate, the fin having first and second sidewalls;
forming a layer of gate material over the substrate and the fin, the gate material including a first portion adjacent to the first sidewall of the fin and a second portion adjacent the second sidewall of the fin;
removing the layer of gate material over the semiconductor fin to leave a first gate along the first sidewall and a second gate along the second sidewall, wherein the first and second gates are electrically isolated;
forming symmetrical source and drain regions relative to the first and second gates such that a channel region will be formed under the first and second gates during operation of the semiconductor structure, wherein there exists a plane parallel to the substrate, and wherein a portion of each of the source region, the drain region and the channel region are within the plane;
applying a first signal to the first gate; and
applying a second signal to the second gate. - View Dependent Claims (27, 28, 29, 30)
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31-41. -41. (canceled)
Specification