Method of forming copper interconnections for semiconductor integrated circuits on a substrate

• US 20050124154A1
• Filed: 12/28/2002
• Published: 06/09/2005
• Est. Priority Date: 12/28/2001
• Status: Abandoned Application

• Current Assignee: ASM Genitech, Inc.
• Original Assignee: ASM Genitech, Inc.
• Inventors: Park, Hyung-Sang, Kang, Sang-Won
• Application Number:
  US10/500,494
• Publication Number:
  US 20050124154A1
• Time in Patent Office: Days
• US Class Current: 438/643
• CPC Class Codes: H01L 21/28562 Selective deposition
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76876 for deposition from the gas phase, e.g. CVD
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A method for forming copper interconnection conductors for interconnecting integrated circuits on a substrate by forming a barrier layer or an adhesion layer or both having excellent adhesion property is disclosed. Ruthenium (Ru) and ruthenium alloys, and rhenium (Re) and rhenium alloys are proposed to use according to the present invention. Other metals proposed to use include nickel (Ni), platinum (Pt), osmium (Os), iridium (Ir) and their alloys, respectively.

Claims

1. A method for forming copper interconnection conductors for interconnecting integrated circuits on a substrate, comprising the steps of;

forming a barrier layer using ruthenium (Ru) or rhenium (Re) or their alloys on the surface of an insulation layer on said substrate by using an atomic layer deposition (ALD) method, and

forming a copper layer on top of said barrier layer.

2. The method of claim 1, wherein said ruthenium (Ru) alloys contain an atomic ratio of at least 50% or more of ruthenium (Ru).

3. The method of claim 1, wherein in place of said atomic layer deposition method, a plasma-enhanced atomic layer deposition (PEALD) method is used.

4. The method of claim 1, wherein said copper layer of thin film is formed using a chemical vapor deposition (CVD) method.

5. The method of claim 1, wherein said copper layer of thin film is formed using a chemical vapor deposition method with a treatment of iodine or iodine compound as a catalyst.

6. The method of claim 1, wherein said copper layer of thin film is formed by using an electroplating method.

7. The method of claim 1, wherein said copper layer of thin film is formed by using a chemical vapor deposition method and an electro-plating method.

8. The method of claim 1, wherein rhenium (Re) or rhenium alloys are used in place of ruthenium (Ru) or ruthenium alloys.

9. The method of claim 8, wherein said rhenium alloys contain an atomic ratio of at least 50% or more of rhenium.

10. A method for forming copper interconnection conductors for interconnecting integrated circuits on a substrate, comprising the steps of;

forming a barrier layer on the surface of a patterned insulation layer on a substrate,

forming an adhesion layer on said barrier layer using ruthenium (Ru) or ruthenium alloys by using an atomic layer deposition method, and

forming a copper layer of thin film on the surface of said adhesion layer.

11. The method of claim 10, wherein said barrier layer is formed using one of the materials including TiN, Ta, TaN, TaNC, WN, WNC, Ti—

Si—

N. and Ta—

Si—

N.

12. The method of claim 10, wherein said ruthenium (Ru) alloys contain an atomic ratio of at least 50% or more of ruthenium.

13. The method of claim 10, wherein in place of said atomic layer deposition method, a plasma-enhanced atomic layer deposition method is used.

14. The method of claim 10, wherein said copper layer of thin film is formed using a chemical vapor deposition (CVD) method.

15. The method of claim 10, wherein said copper layer of thin film is formed using a chemical vapor deposition method with a treatment of iodine or iodine compound as a catalyst.

16. The method of claim 10, wherein said copper layer of thin film is formed by using an electroplating method.

17. The method of claim 10, wherein said copper layer of thin film is formed by using a chemical vapor deposition method and an electroplating method.

18. The method of claim 10, wherein rhenium (Re) or rhenium IS alloys are used in place of ruthenium (Ru) or ruthenium alloys.

19. The method of claim 18, wherein said rhenium alloys contain an atomic ratio of at least 50% or more of rhenium.

20. The method of claim 10, wherein in place of ruthenium (Ru) or ruthenium alloys, one of the materials including nickel (Ni), platinum (Pt), osmium (Os), iridium (Ir) or their alloys of said each metal is used for forming a barrier layer.