Optical semiconductor device

• US 20050127378A1
• Filed: 12/03/2004
• Published: 06/16/2005
• Est. Priority Date: 12/04/2003
• Status: Abandoned Application

• Current Assignee: Nitto Denko Corporation
• Original Assignee: Nitto Denko Corporation
• Inventors: Hotta, Yuji, Kamada, Takashi, Suehiro, Ichirou, Sadayori, Naoki
• Application Number:
  US11/002,278
• Publication Number:
  US 20050127378A1
• Time in Patent Office: Days
• US Class Current: 257/81
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/8592 Applying permanent coating, e.g. protective coating
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin

Abstract

The invention provides an optical semiconductor device which comprises: an optical semiconductor element; a first resin layer encapsulating the optical semiconductor element and comprising a first resin and light-scattering particles; and one or more resin layers sequentially encapsulating the first resin layer and each comprising a resin having a lower refractive index than the first resin. In an embodiment where the optical semiconductor device has a plurality of resin layers over the first resin layer, the plurality of resin layers are disposed such that the refractive indexes of the constituting resins sequentially decrease toward the outermost resin layer.

Claims

1. An optical semiconductor device which comprises:

an optical semiconductor element;

a first resin layer encapsulating said optical semiconductor element and comprising a first resin and light-scattering particles; and

a second resin layer encapsulating said first resin layer and comprising a second resin having a lower refractive index than said first resin.

2. The optical semiconductor device of claim 1, wherein said first resin layer has a thickness of 300 μ

m or smaller.

3. The optical semiconductor device of claim 1, wherein said first resin has a refractive index of 1.6 or higher.

4. The optical semiconductor device of claim 1, wherein said light scattering particles comprises inorganic particles having a refractive index of 1.54 to 2.50.

5. The optical semiconductor device of claim 1, wherein said light scattering particles have an average particle diameter of from 100 nm to 2 μ

m.

6. The optical semiconductor device of claim 1, wherein said first resin layer contains said light scattering particles in an amount of 5 to 75% by volume.

7. The optical semiconductor device of claim 1, wherein said first resin comprises a polycarbodiimide.

8. An optical semiconductor device which comprises:

an optical semiconductor element;

a first resin layer encapsulating said optical semiconductor element and comprising a first resin and light-scattering particles; and

a plurality of resin layers sequentially encapsulating said first resin layer and each comprising a resin having a lower refractive index than said first resin, wherein said plurality of resin layers are disposed such that the refractive indexes of the resins constituting said plurality of resin layers sequentially decrease toward the outermost resin layer.

9. The optical semiconductor device of claim 8, wherein the first resin has a refractive index of 1.6 or higher.

10. The optical semiconductor device of claim 8, wherein the outermost resin layer has a refractive index of less than 1.6.

11. The optical semiconductor device of claim 8, wherein said light scattering particles comprises inorganic particles having a refractive index of 1.54 to 2.50.

12. The optical semiconductor device of claim 8, wherein said light scattering particles have an average particle diameter of from 100 nm to 2 μ

m.

13. The optical semiconductor device of claim 8, wherein said first resin layer contains said light scattering particles in an amount of 5 to 75% by volume.

14. The optical semiconductor device of claim 8, wherein said first resin comprises a polycarbodiimide.

15. The optical semiconductor device of claim 8, wherein the outermost layer further comprises silica particles having an average particle diameter of 1 to 100 nm.