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Gallium nitride materials including thermally conductive regions

  • US 20050127397A1
  • Filed: 02/03/2005
  • Published: 06/16/2005
  • Est. Priority Date: 02/23/2001
  • Status: Abandoned Application
First Claim
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1. A semiconductor structure comprising:

  • a substrate;

    a gallium nitride material device region having a crack level of less than 0.005 micron/micron2 and formed over the substrate;

    a heat spreading layer formed over the substrate, the heat spreading layer having a greater thermal conductivity than that of the gallium nitride material region and capable of conducting heat generated in the gallium nitride material device region; and

    a heat sink.

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