Method and apparatus for forming an SOI body-contacted transistor
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Abstract
A method for forming a silicon-on-insulator transistor (80) includes forming an active region (82) overlying an insulating layer (122), wherein a portion of the active region provides an intrinsic body region (126). A body tie access region (128) is also formed within the active region, overlying the insulating layer and laterally disposed adjacent the intrinsic body region, making electrical contact to the intrinsic body region. A gate electrode (134) is formed overlying the intrinsic body region for providing electrical control of the intrinsic body region, the gate electrode extending over a portion (137) of the body tie access region. The gate electrode is formed having a substantially constant gate length (88) along its entire width overlying the intrinsic body region and the body tie access region to minimize parasitic capacitance and gate electrode leakage. First and second current electrodes (98,100) are formed adjacent opposite sides of the intrinsic body region. In addition, a body tie diffusion (130) is formed within the active region and laterally offset from the body tie access region and electrically coupled to the body tie access region.
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Citations
18 Claims
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1-6. -6. (canceled)
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7. A method for forming a silicon-on-insulator transistor comprising:
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providing an insulating layer;
forming an active region overlying the insulating layer, a portion of the active region providing an intrinsic body region;
forming a body tie access region within the active region and also overlying the insulating layer and laterally adjacent the intrinsic body region, the body tie access region making electrical contact to the intrinsic body region;
forming a gate electrode overlying the intrinsic body region for providing electrical control of the intrinsic body region of the silicon-on-insulator transistor and extending over a portion of the body tie access region to minimize parasitic capacitance and gate electrode leakage;
forming halo/extension implants of dopants into the intrinsic body region while substantially blocking the halo/extension implants of dopants from the body tie access region;
forming a sidewall spacer dielectric material adjacent a substantially constant length of the gate electrode and overlying the body tie access region;
forming first and second current electrodes adjacent opposite sides of the Intrinsic body region; and
forming a body tie diffusion within the active region and laterally offset from the body tie access region and electrically coupled to the body tie access region. - View Dependent Claims (8, 9, 10, 11)
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12. A method of forming a silicon-on-insulator transistor comprising:
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forming an insulating substrate;
defining an active region which defines a location of the silicon-on-insulator transistor;
implanting the active region with a predetermined diffusion material to form an intrinsic body region of desired doping concentration;
defining a body tie access region by forming an opening in a mask overlying the active region;
implanting the active region to form the body tie access region, the body tie access region having a predetermined doping concentration to minimize body tie access resistance;
forming a gate oxide overlying both the intrinsic body region and the body tie access region;
depositing and patterning a substantially constant length gate electrode material overlying the intrinsic body region and a portion of the body tie access region;
forming halo/extension implants of dopants into the intrinsic body region while substantially blocking the halo/extension implants of dopants from the body tie access region;
forming sidewall spacer dielectric material overlying the substantially constant length gate electrode material and body tie access region;
masking a region substantially overlying the body tie access region using a mask;
removing the sidewall spacer dielectric material substantially everywhere except overlying the body tie access region and adjacent the substantially constant length gate electrode material;
forming a source diffusion region and a drain diffusion region; and
forming a body tie diffusion region. - View Dependent Claims (13, 14, 15, 16, 17, 18)
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Specification