Method of manufacturing a substrate for an electronic device by using etchant and electronic device having the substrate

• US 20050127447A1
• Filed: 02/02/2005
• Published: 06/16/2005
• Est. Priority Date: 10/23/1998
• Status: Active Grant

• Current Assignee: LG Display Co., Ltd.
• Original Assignee: LG Philips LCD Company Limited (LG Display Co., Ltd.)
• Inventors: Jo, Gyoo Chul
• Granted Patent: US 7,101,809 B2
• Time in Patent Office: Days
• US Class Current: 257/359
• CPC Class Codes: C23F 1/02 Local etching
• CPC Class Codes: C23F 1/20 for etching aluminium or alloys thereof
• CPC Class Codes: H01L 21/32134 by liquid etching only
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate

Abstract

In the case that a stacked layer, in which another metal layer is stacked on an Al layer or Al alloy layer having a low resistance, is used as a wiring material, an etchant is provided which can etch to a substantially equal etching rate by executing only one etching on the each metal layer composing the stacked layer. A method of manufacturing a substrate for an electronic device uses the etchant, producing an electronic device having the substrate.

In order to achieve the object, the etchant has fluoric acid, periodic acid and sulfuric acid wherein the total weight ratio of the fluoric acid and periodic acid is 0.05˜30 wt %, the weight ratio of the sulfuric acid is 0.05˜20 wt %, the weight ratio of periodic acid to fluoric acid is 0.01˜2 wt %. Also each layer of wiring(5,12,14) formed by stacking Al layer or Al alloy layer and Ti layer or Ti alloy layer can be uniformly etched to substantially equal etching rate by the etchant.

Claims

1-4. -4. (canceled)

5. A method for manufacturing a device, comprising:

forming a stacked wiring layer on a substrate, the stacked wiring layer having a first layer and a second layer, wherein the first layer includes aluminum and the second layer includes titanium.

forming a photoresist pattern on the stacked wiring layer; and

performing a single etching for the stacked wiring layer using an etchant, wherein the etched first layer has substantially the same width as the etched second layer.

6. The method according to claim 5, wherein the second layer is formed on the first layer.

7. The method according to claim 6, wherein an etching rate of the first layer is substantially equal to an etching rate of the second layer.

8. The method according to claim 5, wherein the stacked wiring layer is a gate electrode of a thin film transistor.

9. The method according to claim 8, further comprising a gate insulating layer over the gate electrode.

10. The method according to claim 9, further comprising a silicon layer over the gate insulating layer.

11. The method according to claim 10, further comprising a source electrode and a drain electrode on the silicon layer.

12. The method according to claim 11, further comprising a passivation layer over the source and drain electrodes.

13. The method according to claim 12, further comprising a pixel electrode on the passivation layer.

14. The method according to claim 13, wherein the pixel electrode is electrically connected with the drain electrode through a contact hole.

15. The method according to claim 6, wherein the stacked wiring layer is a pad.

16. The method according to claim 6, wherein the etchant includes a fluoric acid, a periodic acid and a sulfuric acid, in which the total weight ratio of the fluoric acid and the periodic acid is 0.05˜

30 wt. %, the weight ratio of the sulfuric acid is 0.05˜

20 wt. %, the weight ratio of the periodic acid to fluoric acid is 0.01˜

2 wt. %.

17. The method according to claim 6, wherein the etchant produces a first electric potential between the first layer and a standard hydrogen electrode and a second electric potential between the second layer and a standard hydrogen electrode, and the potential difference between the first electric potential and the second electric potential is less than 400 millivolts. 18. The method according to claim 5, wherein the first layer includes aluminum alloy.

19. The method according to claim 5, wherein the second layer includes titanium alloy.