Method for manufacturing thin gaas die with copper-back metal structures
29 Assignments
0 Petitions
Accused Products
Abstract
A thin GaAs Substrate can be provided with a copper back-metal layer to allow the GaAs Substrate to be packaged using conventional plastic packaging technologies. By providing the GaAs Substrate with a copper back-metal layer, the GaAs Substrate can be made thinner than 2 mils (about 50 microns), thereby reducing heat dissipation problems and allowing the semiconductor die to be compatible with soft-solder technologies. By enabling the semiconductor die to be packaged in a plastic package substantial cost savings can be achieved.
31 Citations
35 Claims
-
1-12. -12. (canceled)
-
13. A method comprising:
-
placing a GaAs die having a thickness of less than approximately 50 microns on a lead frame having a die attach surface comprising a soft solder; and
heating the soft solder to attach the die to the lead frame. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
-
-
21-23. -23. (canceled)
-
24. A method comprising:
-
forming a diffusion barrier layer overlying a backside surface of a GaAs substrate;
forming a stress relief layer overlying the diffusion barrier layer;
forming a copper back-metal layer overlying the stress relief layer; and
forming an oxidation resistant layer overlying the copper-back metal layer. - View Dependent Claims (25, 26, 27, 28, 29)
-
-
30. A method comprising:
-
forming a semiconductor die comprising a GaAs substrate and a copper back-metal layer overlying a backside surface of the GaAs substrate;
disposing the semiconductor die at a soft solder layer of a die attach surface of a lead frame;
reflowing the soft-solder layer so as to form a solder joint between the die attach surface and the semiconductor die;
electrically coupling the semiconductor die to one or more leads of the lead frame; and
encapsulating the semiconductor die and the lead frame in a plastic die package. - View Dependent Claims (31, 32, 33, 34, 35)
-
Specification