Power module with heat exchange

• US 20050128706A1
• Filed: 12/16/2003
• Published: 06/16/2005
• Est. Priority Date: 12/16/2003
• Status: Abandoned Application

• Current Assignee: Ballard Power Systems Corporation (Superior Plus Corporation)
• Original Assignee: Ballard Power Systems Corporation (Superior Plus Corporation)
• Inventors: Rodriguez, Pablo, Ahmed, Sayeed, Patwardhan, Ajay V., Maly, Douglas K., Chen, Kanghua, Jimenez, Gerardo
• Application Number:
  US10/738,926
• Publication Number:
  US 20050128706A1
• Time in Patent Office: Days
• US Class Current: 361/699
• CPC Class Codes: F28F 3/046 the deformations being linear, e.g. corrugations
• CPC Class Codes: F28F 3/12 Elements constructed in the shape of a hollow panel, e.g. with channels F28D1/02, F28D1/03 take precedence
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/49111 the connectors connecting two common bonding areas, e.g. Litz or braid wires
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 23/427 Cooling by change of state, e.g. use of heat pipes by liquefied gas H01L23/445
• CPC Class Codes: H01L 23/473 by flowing liquids H01L23/4332, H01L23/4338 take precedence
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 25/072 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 Silicon [Si]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/014 Solder alloys
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19042 : being an inductor
• CPC Class Codes: H05K 7/20927 : Liquid coolant without phase change
• CPC Class Codes: H05K 7/20936 : Liquid coolant with phase change

Abstract

A power module comprises first and second substrates carrying semiconductor devices and coupled to respective pluralities of heat exchange members without intervening thermally insulative structures. One or more heat exchange loops circulate a heat exchange medium thermally coupled to the heat exchange members. Substrates may function as integral bus bars.

Claims

1. A power module, comprising:

a housing of electrically insulative material, the housing comprising an interior and an exterior;

a first plurality of heat exchange members coupled to the housing;

a second plurality of heat exchange members coupled to the housing and electrically isolated from the first plurality of heat exchange members;

a first substrate of electrically and thermally conductive material received in the interior of the housing and thermally coupled to the first plurality of heat exchange members without any intervening thermally insulative structures;

a second substrate of electrically and thermally conductive material received in the interior of the housing and thermally coupled to the second plurality of heat exchange members without any intervening thermally insulative structures, the second substrate electrically isolated from the first substrate;

a first set of semiconductor devices each comprising at least a first terminal and a second terminal, each of the semiconductor devices of the first set surface mounted to the first substrate to electrically couple the first terminal of the semiconductor device to the first substrate and to thermally couple the semiconductor devices to the first plurality of heat exchange members via the first substrate; and

a second set of semiconductor devices each comprising at least a first terminal and a second terminal, each of the semiconductor devices of the second set surface mounted to the second substrate to electrically couple the first terminal of the semiconductor device to the second substrate and to thermally couple the semiconductor devices to the second plurality of heat exchange members via the second substrate.

2. The power module of claim 1, further comprising:

a third substrate received in the housing and electrically isolated from the first substrate, the third substrate electrically coupled to the second substrate via at least one wire bond.

3. The power module of claim 2 wherein the first, the second and the third substrates each comprise a coupling structure to electrically couple the first and the third substrates to an external power source and to electrically couple the second substrate to an external load.

4. The power module of claim 3 wherein the coupling structures comprise a respective hole formed through each of the first, the second, and the third substrates.

5. The power module of claim 3 wherein the coupling structures comprise a respective threaded hole formed through the first, the second, and the third substrates.

6. The power module of claim 2 wherein the second terminals of the semiconductor devices of the second set of semiconductor devices are electrically coupled to the third substrate by at least one wire bond and the second terminals of the semiconductor devices of the first set of semiconductor devices are electrically coupled to the second substrate via at least one wire bond.

7. The power module of claim 6 wherein the first set of semiconductor devices comprises at least one transistor and one diode coupled in anti-parallel with the transistor and the second set of semiconductor devices comprises at least one transistor and one diode coupled in anti-parallel with the transistor.

8. The power module of claim 1 wherein the first set of semiconductor devices comprises at least one transistor selected from the group consisting of an insulated gate bipolar transistor and a metal oxide semiconductor transistor.

9. The power module of claim 1 wherein the first and the second plurality of heat exchange members are received in the interior of the housing.

10. The power module of claim 1, further comprising:

a first heat transfer loop carrying a first heat transfer medium in thermal contact with the first and the second plurality of heat exchange members.

11. The power module of claim 10, further comprising:

a second heat transfer loop carrying a second heat transfer medium thermally coupled to the first heat transfer medium.

12. The power module of claim 11, further comprising:

at least one of a fan, a heat exchanger and a pump operable to circulate at least one of the first and the second heat transfer mediums in the respective one of the first and the second heat transfer loops.

13. A power module, comprising:

a housing of electrically insulative material, the housing comprising an interior and an exterior;

a first plurality of heat exchange members coupled to the housing;

a second plurality of heat exchange members coupled to the housing and electrically isolated from the first plurality of heat exchange members;

a first substrate of electrically and thermally conductive material received in the interior of the housing and thermally coupled to the first plurality of heat exchange members without any intervening thermally insulative structures;

a second substrate of electrically and thermally conductive material received in the interior of the housing and thermally coupled to the second plurality of heat exchange members without any intervening thermally insulative structures, the second substrate electrically isolated from the first substrate;

a third substrate received in the housing and electrically isolated from the first substrate, the third substrate electrically coupled to the second substrate via at least one wire bond;

a first set of semiconductor devices comprising at least one transistor and at least one diode, each of the semiconductor devices of the first set surface mounted to the first substrate to electrically couple a first terminal of the semiconductor device to the first substrate and to thermally couple the semiconductor devices to the first plurality of heat exchange members via the first substrate, wherein a second terminal of the semiconductor devices of the first set of semiconductor devices is electrically coupled to the second substrate; and

a second set of semiconductor devices comprising at least one transistor and at least one diode, each of the semiconductor devices of the second set surface mounted to the second substrate to electrically couple a first terminal of the semiconductor device to the second substrate and to thermally couple the semiconductor devices to the second plurality of heat exchange members via the second substrate, wherein a second terminal of the semiconductor devices of the second set of semiconductor devices is electrically coupled to the third substrate, the first and the second set of semiconductor devices forming a half bridge inverter.

14. The power module of claim 13 wherein the first, the second and the third substrates each comprise a coupling structure to electrically couple the first and the third substrates to at least one of an external DC load and an external DC source and to electrically couple the second substrate to at least one of an external AC source and an external AC load.

15. The power module of claim 13 wherein the first plurality of heat exchange members comprises a plurality of fins extending from a first metal plate and the first substrate is soldered directly to the first metal plate.

16. The power module of claim 13, further comprising:

a first heat transfer loop carrying a first heat transfer medium in thermal contact with the first and the second plurality of heat exchange members; and

a second heat transfer loop carrying a second heat transfer medium thermally coupled to the first heat transfer medium.

17. A power module, comprising:

a housing;

a first heat exchange loop;

a first set of semiconductor devices comprising at least a first transistor and at least a first diode;

a second set of semiconductor devices comprising at least a first transistor and a first diode, the first and the second sets of semiconductor devices electrically coupled as a half bridge inverter;

first means for thermally coupling the first set of semiconductor devices to the first heat exchange loop without any intervening thermally insulative structures;

second means for thermally coupling the second set of semiconductor devices to the first heat exchange loop without any intervening thermally insulative structures, the second means electrically isolated from the first means.

18. The power module of claim 17 wherein the first means comprises a first substrate soldered to a first plate from which a plurality of heat exchange members project and to which the first set of semiconductor devices is electrically and thermally coupled.

19. The power module of claim 18 wherein the second means comprises a second substrate soldered to a second plate from which a second plurality of heat exchange members project and to which the second set of semiconductor devices is electrically and thermally coupled, the second substrate electrically isolated from the first substrate.

20. The power module of claim 19 wherein the first substrate comprises a first coupling structure, the second substrate comprises a second coupling structure, and further comprising:

a third substrate electrically coupled to the second substrate via a number of wire bonds.

21. A power module, comprising:

a housing of electrically insulative material, the housing comprising an interior and an exterior;

a first substrate of electrically and thermally conductive material received in the interior of the housing, the first substrate comprising a coupling structure to selectively electrically couple to a first pole of an external DC device located in the exterior;

a second substrate of electrically and thermally conductive material received in the interior of the housing and electrically isolated from the first substrate;

a third substrate received in the housing and electrically isolated from the first substrate, the third substrate electrically coupled to the second substrate via at least one wire bond, the third substrate comprising a coupling structure to selectively electrically couple to a second pole of the external DC device;

a first set of semiconductor devices comprising at least one transistor and at least one diode, each of the semiconductor devices of the first set surface mounted to the first substrate to electrically couple a first terminal of the semiconductor device to the first substrate and to thermally couple the semiconductor devices to the first substrate, wherein a second terminal of the semiconductor devices of the first set of semiconductor devices is electrically coupled to the second substrate; and

a second set of semiconductor devices comprising at least one transistor and at least one diode, each of the semiconductor devices of the second set surface mounted to the second substrate to electrically couple a first terminal of the semiconductor device to the second substrate and to thermally couple the semiconductor devices to the second substrate, wherein a second terminal of the semiconductor devices of the second set of semiconductor devices is electrically coupled to the third substrate, the first and the second set of semiconductor devices forming a half bridge inverter.

22. The power module of claim 21 wherein the second substrate comprises a coupling structure to selectively electrically couple to an AC device external to the housing.

23. The power module of claim 21, further comprising:

a first plurality of heat exchange members coupled to the housing;

a second plurality of heat exchange members coupled to the housing and electrically isolated from the first plurality of heat exchange members, wherein the first substrate is thermally coupled to the first plurality of heat exchange members without any intervening thermally insulative structures and the second substrate is thermally coupled to the second plurality of heat exchange members without any intervening thermally insulative structures.

24. The power module of claim 23 wherein the surface mounting of the first set of semiconductor devices thermally couples each of the semiconductor devices in the first set of semiconductor devices to the first plurality of heat exchange members via the first substrate, and wherein the surface mounting of the second set of semiconductor devices thermally couples each of the semiconductor devices in the second set of semiconductor devices to the second plurality of heat exchange members via the second substrate.