RECTIFYING CHARGE STORAGE ELEMENT WITH TRANSISTOR

• US 20050133847A1
• Filed: 07/01/2003
• Published: 06/23/2005
• Est. Priority Date: 11/28/2000
• Status: Active Grant

• Current Assignee: Precision Dynamics Corporation (Brady Corporation)
• Original Assignee: Precision Dynamics Corporation (Brady Corporation)
• Inventors: Beigel, Michael L.
• Granted Patent: US 6,933,774 B2
• Time in Patent Office: Days
• US Class Current: 257/303
• CPC Class Codes: G06K 19/0701 at least one of the integrated circuit chips comprising an arrangement for power management
• CPC Class Codes: G06K 19/0723 the record carrier comprising an arrangement for non-contact communication, e.g. wireless communication circuits on transponder cards, non-contact smart cards or RFIDs
• CPC Class Codes: G06K 19/07749 the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card

Abstract

A composite rectifying charge storage device, consisting of a rectifier and a capacitor which share common elements, further includes a transistor.

Claims

1. A rectifying charge storage element, comprising;

a rectifier structure fabricated with a common conductor forming a side of the rectifier structure;

a capacitor structure fabricated as a single unitary structure with the rectifier structure such that the capacitor structure incorporates the common conductor of the rectifier structure as a side of the capacitor structure, the capacitor structure to receive the rectified current from the rectifier structure over the common conductor; and

a transistor incorporating the common conductor as one junction thereof;

wherein said transistor incorporates the common conductor as a gate conductor thereof, said capacitor structure comprises said common conductor, a second conductor, and a dielectric material therebetween, and wherein said second conductor comprises an organic semiconductor device, said transistor further incorporating said second conductor as source and drain conductors thereof, said second conductor forming a channel region for electron transfer between said source and drain conductors.

5. The rectifying charge storage element of claim 1, wherein said rectifier and capacitor structures and said transistor are carried on a common substrate.

6. The rectifying charge storage element of claim 5, wherein said common substrate is a flexible substrate.

7. The rectifying charge storage element of claim 5, wherein said capacitor structure incorporates said common substrate.

2. (canceled)

3. (canceled)

4. (canceled)

8. (canceled)

9. (canceled)

10. A rectifying charge storage element, comprising:

a rectifier structure fabricated with a common conductor forming a side of the rectifier structure;

a capacitor structure fabricated as a single unitary structure with the rectifier structure such that the capacitor structure incorporates the common conductor of the rectifier structure as a side of the capacitor structure the capacitor structure to receive the rectified current from the rectifier structure over the common conductor; and

a transistor incorporating the common conductor as one function thereof;

wherein said transistor incorporates the common conductor as a drain conductor thereof, wherein said capacitor structure comprises said common conductor, a second conductor and a dielectric material therebetween, and wherein said transistor further includes gate and source conductors carried by said dielectric material, and further including an organic semiconductor carried by said dielectric material and forming a channel region for electron transfer between said source and drain conductors.

11. (canceled)

12. A rectifying charge storage element, comprising:

a rectifier structure fabricated with a common conductor forming a side of the rectifier structure;

a capacitor structure fabricated as a single unitary structure with the rectifier structure such that the capacitor structure incorporates the common conductor of the rectifier structure as a side of the capacitor structure, the capacitor structure to receive the rectified current from the rectifier structure over the common conductor, said capacitor structure comprising said common conductor, a second conductor, and a dielectric material therebetween; and

a transistor incorporating the common conductor as one junction thereof;

said transistor incorporating the common conductor as a drain conductor thereof;

wherein said rectifier and capacitor structures and said transistor are carried on a common flexible substrate.

13. The rectifying charge storage element of claim 12, wherein said capacitor structure incorporates said common substrate.

14. (canceled)

15. A rectifying charge storage element, comprising:

a rectifier structure fabricated with a common conductor forming a side of the rectifier structure;

a capacitor structure fabricated as a single unitary structure with the rectifier structure such that the capacitor structure incorporates the common conductor of the rectifier structure as a side of the capacitor structure, the capacitor structure to receive the rectified current from the rectifier structure over the common conductor; and

a transistor incorporating the common conductor as one junction thereof;

wherein said rectifier structure includes a diode having an anode conductor and a cathode junction incorporating said common conductor, and further wherein said capacitor structure comprises said common conductor, a second conductor, and a dielectric material therebetween, said anode conductor and said common conductor being formed from materials having different work functions; and

wherein said second conductor comprises an organic semiconductor device, said transistor incorporates said common conductor as a gate conductor thereof and further incorporates said second conductor as source and drain conductors thereof, said second conductor forms a channel region for electron transfer between said source and drain conductors, and wherein said source and drain conductors are each formed from a material having a work function different from the work function of the material forming said anode conductor.

16. The rectifying charge storage element of claim 15, wherein said rectifier and capacitor structures and said transistor are carried on a common substrate.

17. A rectifying charge storage element, comprising:

a rectifier structure fabricated with a common conductor forming a side of the rectifier structure;

a capacitor structure fabricated as a single unitary structure with the rectifier structure such that the capacitor structure incorporates the common conductor of the rectifier structure as a side of the capacitor structure, the capacitor structure to receive the rectified current from the rectifier structure over the common conductor; and

a transistor incorporating the common conductor as one junction thereof;

wherein said rectifier structure includes a diode having an anode conductor and a cathode junction incorporating said common conductor, and further wherein said capacitor structure comprises said common conductor, a second conductor, and a dielectric material therebetween, said anode conductor and said common conductor being formed from materials having different work functions; and

wherein said transistor incorporates the common conductor as a drain conductor thereof, said transistor further including gate and source conductors carried by said dielectric material, and further including an organic semiconductor carried by said dielectric material and forming a channel region for electron transfer between said source and drain conductors.

18. The rectifying charge storage element of claim 17, wherein said rectifier and capacitor structures and said transistor are carried on a common substrate.

19. The rectifying charge storage element of claim 17, wherein said transistor comprises an FET transistor.

20. A rectifying charge storage element, comprising:

a rectifier;

a common conductor connected to one side of said rectifier;

a capacitor incorporating said common conductor;

said rectifier, common conductor and capacitor comprising a unitary element; and

a transistor incorporating said common conductor as one junction thereof;

wherein said rectifier and capacitor and transistor are carried on a common flexible substrate.

21. The rectifying charge storage element of claim 20, wherein said transistor comprises an FET transistor.

24. The rectifying charge storage element of claim 20, wherein said transistor incorporates the common conductor as a gate conductor thereof.

27. The rectifying charge storage element of claim 20, wherein said transistor incorporates the common conductor as a drain conductor thereof.

22. (canceled)

23. (canceled)

25. A rectifying charge storage element. comprising:

a rectifier;

a common conductor connected to one side of said rectifier;

a capacitor incorporating said common conductor;

said rectifier, common conductor and capacitor comprising a unitary element; and

a transistor incorporating said common conductor as one junction thereof,

wherein said transistor incorporates the common conductor as a gate conductor thereof, and said capacitor comprises said common conductor, a second conductor comprising an organic semiconductor, and a dielectric material therebetween, said transistor further incorporating said second conductor as source and drain conductors thereof, said second conductor forming a channel region for electron transfer between said source and drain conductors.

26. The rectifying charge storage element of claim 25, wherein said capacitor incorporates a common substrate carrying said rectifier, capacitor and transistor.

28. A rectifying charge storage element, comprising:

a rectifier;

a common conductor connected to one side of said rectifier;

a capacitor incorporating said common conductor;

said rectifier common conductor and capacitor comprising a unitary element; and

a transistor incorporating said common conductor as one junction thereof;

wherein said capacitor comprises said common conductor, a second conductor, and a dielectric material therebetween, said transistor further including gate and source conductors carried by said dielectric material, and further including an organic semiconductor carried by said dielectric material and forming a channel region for electron transfer between said source and drain conductors.

29. The rectifying charge storage element of claim 28, wherein said capacitor incorporates a common substrate carrying said rectifier, capacitor and transistor.

30. A rectifying charge storage element, comprising:

a rectifier;

a common conductor connected to one side of said rectifier;

a capacitor incorporating said common conductor;

said rectifier, common conductor and capacitor comprising a unitary element; and

a transistor incorporating said common conductor as one junction thereof;

wherein said rectifier includes a diode having an anode conductor and a cathode junction incorporating said common conductor, and further wherein said capacitor comprises said common conductor, a second conductor, and a dielectric material therebetween, said anode conductor and said common conductor being formed from materials having different work functions.

31. The rectifying charge storage element of claim 30, wherein said second conductor comprises an organic semiconductor device, said transistor incorporates said common conductor as a gate conductor thereof and further incorporates said second conductor as source and drain conductors thereof, said second conductor forms a channel region for electron transfer between said source and drain conductors, and wherein said source and drain conductors are each formed from a material having a work function different from the work function of the material forming said anode conductor.

32. The rectifying charge storage element of claim 31, wherein said capacitor incorporates a common substrate carrying said rectifier, capacitor and transistor.

33. A rectifying charge storage element, comprising:

a rectifier;

a common conductor connected to one side of said rectifier;

a capacitor incorporating said common conductor;

said rectifier, common conductor and capacitor comprising a unitary element; and

a transistor incorporating said common conductor as one junction thereof;

wherein said transistor incorporates the common conductor as a drain conductor thereof, said transistor further including gate and source conductors carried by said dielectric material, and further including an organic semiconductor carried by said dielectric material and forming a channel region for electron transfer between said source and drain conductors.

34. The rectifying charge storage element of claim 33, wherein said capacitor incorporates a common substrate carrying said rectifier, capacitor and transistor.

35. (canceled)

36. (canceled)

37. A rectifying charge storage element, comprising:

a rectifier structure fabricated with a common conductor forming a side of the rectifier structure;

a capacitor structure fabricated as a single unitary structure with the rectifier structure such that the capacitor structure incorporates the common conductor of the rectifier structure as a side of the capacitor structure, the capacitor structure to receive the rectified current from the rectifier structure over the common conductor; and

a transistor incorporating the common conductor as one junction thereof;

wherein said rectifier and capacitor structures and said transistor are carried on a common flexible substrate.

38. The rectifying charge storage element of claim 37, wherein said capacitor structure incorporates said common substrate.

39. The rectifying charge storage element of claim 37, wherein said transistor incorporates the common conductor as a drain conductor thereof.

40. The rectifying charge storage element of claim 39, wherein said capacitor structure comprises said common conductor, a second conductor, and a dielectric material therebetween.

41. The rectifying charge storage element of claim 40, wherein said transistor further includes gate and source conductors carried by said dielectric material, and further including an organic semiconductor carried by said dielectric material and forming a channel region for electron transfer between said source and drain conductors.