Apparatus, methods and articles of manufacture for a dual mode amplifier

• US 20050134388A1
• Filed: 12/23/2003
• Published: 06/23/2005
• Est. Priority Date: 12/23/2003
• Status: Active Grant

• Current Assignee: Cobham Defense Electronic Systems Corporation (Cobham PLC)
• Original Assignee: M/A Com
• Inventors: Jenkins, Alan Peter
• Granted Patent: US 6,992,529 B2
• Time in Patent Office: Days
• US Class Current: 330/307
• CPC Class Codes: H03F 1/0261 with control of the polarisation voltage or current, e.g. gliding Class A
• CPC Class Codes: H03F 2203/7209 the gated amplifier being switched from a first band to a second band

Abstract

The invention is directed to a system for electromagnetic communications that includes a semiconductor die; at least one amplifier on the die to amplify an input signal and generate an output signal; and an active bias control component on the die for adjusting biasing of the amplifier so that the amplifier is operable in a plurality of frequency bands. In one embodiment, a PCS band and W-CDMA power amplifier may be integrated on the same power amplifier die, and different output power requirements may be addressed by the use of an Si DC-DC converter. Such a converter may provide efficiency enhancements to the overall system through the use of dynamic bias control under active power control situations from the network. In addition, the converter may be used in a voltage up-converter state that allows a W-CDMA optimized power amplifier to operate at PCS frequencies and output power levels.

Claims

1. An apparatus for electromagnetic communications comprising:

a semiconductor die;

at least one amplifier on said die to amplify an input signal and generate an output signal; and

an active bias control component on said die for adjusting biasing of said amplifier so that said amplifier is operable in a plurality of frequency bands.

2. The apparatus of claim 1, further comprising a DC-DC converter on said die for adjusting said biasing of said amplifier by up-converting amplifier bias voltage.

3. The apparatus of claim 2, wherein said DC-DC converter is comprised of Silicon.

4. The apparatus of claim 1, wherein said semiconductor die is contains one or more selected from the group consisting of Gallium, Arsenide, Silicon or Silicon-Germanium.

5. The apparatus of claim 1, wherein said amplifier is optimized for operation with W-CDMA and said active bias control is adjustable for also operating said amplifier in the PCS frequency band.

6. An amplifier comprising a semiconductor die having circuitry to amplify an input signal and generate an output signal and to adjust biasing of said circuitry so that said amplifier is operable in a plurality of frequency bands.

7. The amplifier of claim 6, further comprising DC-DC conversion circuitry on said die for adjusting said biasing of said amplifier by up-converting amplifier bias voltage.

8. The amplifier of claim 7, wherein said DC-DC conversion circuitry is comprised of Silicon.

9. The amplifier of claim 6, wherein said semiconductor die is contains one or more selected from the group consisting of Gallium, Arsenide, Silicon or Silicon-Germanium.

10. The amplifier of claim 6, wherein said amplifier is optimized for operation with W-CDMA and said circuitry is adjustable for also operating said amplifier in the PCS frequency band.

11. A power amplifier comprising a semiconductor die having circuitry to amplify an input signal to generate an output signal and to adjust biasing of said circuitry by up-converting amplifier bias voltage so that said amplifier is operable in a plurality of frequency bands.

12. The power amplifier of claim 11, wherein said portion of said circuitry performing said up-conversion is comprised of Silicon.

13. The power amplifier of claim 11, wherein said semiconductor die is contains one or more selected from the group consisting of Gallium, Arsenide, Silicon or Silicon-Germanium.

14. The power amplifier of claim 11, wherein said power amplifier circuitry is configured for operation with W-CDMA and said circuitry is adjustable for also operating said power amplifier in the PCS frequency band.