Magnetic elements with ballistic magnetoresistance utilizing spin-transfer and an MRAM device using such magnetic elements
First Claim
1. A magnetic element comprising:
- a pinned layer having a pinned layer magnetization;
a free layer having a free layer magnetization;
a magnetic current confined layer residing between the pinned layer and the free layer, the magnetic current confined layer having at least one channel in an insulating matrix, the at least one channel being ferromagnetic, conductive, and extending through the insulating matrix between the free layer and the pinned layer, the at least one channel having at least one size that is sufficiently small that charge carriers can give rise to ballistic magnetoresistance in the magnetic current confined layer.
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Abstract
A method and system for providing a magnetic element is disclosed. The method and system include providing a pinned layer, a magnetic current confined layer, and a free layer. The pinned layer is ferromagnetic and has a first pinned layer magnetization. The magnetic current confined layer has at least one channel in an insulating matrix and resides between the pinned layer and the free layer. The channel(s) are ferromagnetic, conductive, and extend through the insulating matrix between the free layer and the pinned layer. The size(s) of the channel(s) are sufficiently small that charge carriers can give rise to ballistic magnetoresistance in the magnetic current confined layer. The free layer is ferromagnetic and has a free layer magnetization. Preferably, the method and system also include providing a second pinned layer and a nonmagnetic spacer layer between the second pinned layer and the free layer. In this aspect, the magnetic element is configured to allow the free layer magnetization to be switched using spin transfer.
162 Citations
39 Claims
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1. A magnetic element comprising:
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a pinned layer having a pinned layer magnetization;
a free layer having a free layer magnetization;
a magnetic current confined layer residing between the pinned layer and the free layer, the magnetic current confined layer having at least one channel in an insulating matrix, the at least one channel being ferromagnetic, conductive, and extending through the insulating matrix between the free layer and the pinned layer, the at least one channel having at least one size that is sufficiently small that charge carriers can give rise to ballistic magnetoresistance in the magnetic current confined layer. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A magnetic element comprising:
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a pinned layer having a pinned layer magnetization;
a free layer having a free layer magnetization;
a magnetic current confined layer residing between the pinned layer and the free layer, the magnetic current confined layer having at least one channel in an insulating matrix, the at least one channel being ferromagnetic, conductive, and extending through the insulating matrix between the free layer and the pinned layer, the at least one channel having at least one size that is sufficiently small that charge carriers can give rise to ballistic magnetoresistance in the magnetic current confined layer;
a second pinned layer having a second pinned layer magnetization; and
a nonmagnetic spacer layer residing between the free layer and the second pinned layer; and
wherein the magnetic element is configured to allow the free layer magnetization to be switched using spin transfer. - View Dependent Claims (8, 9, 10, 11, 12, 13)
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14. A magnetic element comprising:
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a pinned layer having a first pinned layer magnetization;
a first free layer having a first free layer magnetization;
a magnetic current confined layer residing between the pinned layer and the first free layer, the magnetic current confined layer having at least one channel in an insulating matrix, the at least one channel being ferromagnetic, conductive, and extending through the insulating matrix between the first free layer and the pinned layer, the at least one channel having at least one size that is sufficiently small that charge carriers can give rise to ballistic magnetoresistance in the magnetic current confined layer; and
a second free layer having a second free layer magnetization, the second free layer being magnetostatically coupled to the first free layer;
a second pinned layer having a second pinned layer magnetization;
a nonmagnetic spacer layer residing between the second free layer and the second pinned layer;
wherein the second free layer is configured to allow the second free layer magnetization to be switched using spin transfer. - View Dependent Claims (15, 16, 17, 18)
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19. A method for providing a magnetic element comprising:
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(a) providing a pinned layer having a first pinned layer magnetization;
(b) providing a magnetic current confined layer having at least one channel in an insulating matrix, the at least one channel being ferromagnetic and conductive, the at least one channel having at least one size that is sufficiently small that charge carriers can give rise to ballistic magnetoresistance in the magnetic current confined layer; and
(c) providing a free layer having a free layer magnetization, the magnetic current confined layer residing between the pinned layer and the free layer, the at least one channel extending through the insulating matrix between the pinned layer and the free layer;
wherein the free layer is configured to allow the free layer magnetization to be switched using spin transfer. - View Dependent Claims (20, 21, 22, 23, 24, 25)
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26. A method for providing a magnetic element comprising:
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(a) providing a pinned layer having a first pinned layer magnetization;
(b) providing a magnetic current confined layer having at least one channel in an insulating matrix, the at least one channel being ferromagnetic and conductive, the at least one channel having at least one size that is sufficiently small that charge carriers can give rise to ballistic magnetoresistance in the magnetic current confined layer; and
(c) providing a free layer having a free layer magnetization, the magnetic current confined layer residing between the pinned layer and the free layer, the at least one channel extending through the insulating matrix between the pinned layer and the free layer;
(d) providing a second pinned layer having a second pinned layer magnetization; and
(e) providing a nonmagnetic spacer layer residing between the free layer and the second pinned layer;
wherein the free layer is configured to allow the free layer magnetization to be switched using spin transfer. - View Dependent Claims (27, 28, 29, 30, 31, 32, 33)
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34. A method for providing a magnetic element comprising:
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(a) providing a first pinned layer having a first pinned layer magnetization;
(b) providing a magnetic current confined layer having at least one channel in an insulating matrix, the at least one channel being ferromagnetic, and conductive, the at least one channel having at least one size that is sufficiently small that charge carriers can give rise to ballistic magnetoresistance in the at least one current confined layer; and
(c) providing a first free layer having a free layer magnetization, the magnetic current confined layer residing between the pinned layer and the free layer, the at least one channel extending through the insulating matrix between the pinned layer and the first free layer;
(d) providing a second free layer, the second free layer having a second free layer magnetization, the second free layer being magnetostatically coupled to the free layer;
(e) providing a second pinned layer being ferromagnetic and having a second pinned layer magnetization;
(f) providing a nonmagnetic spacer layer residing between the second free layer and the second pinned layer;
wherein the second free layer is configured to be written using spin transfer. - View Dependent Claims (35, 36, 37, 38, 39)
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Specification