Organic semiconductor device and method for manufacturing the same

• US 20050139823A1
• Filed: 12/15/2004
• Published: 06/30/2005
• Est. Priority Date: 12/26/2003
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Hirakata, Yoshiharu, Ishitani, Tetsuji, Imahayashi, Ryota, Fukai, Shuji
• Granted Patent: US 7,554,121 B2
• Time in Patent Office: Days
• US Class Current: 257/40
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: H10K 10/466 Lateral bottom-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 71/50 Forming devices by joining two substrates together, e.g. lamination techniques
• CPC Class Codes: H10K 85/10 Organic polymers or oligomers
• CPC Class Codes: H10K 85/111 comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
• CPC Class Codes: H10K 85/113 Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
• CPC Class Codes: H10K 85/114 Poly-phenylenevinylene; Derivatives thereof
• CPC Class Codes: H10K 85/143 Polyacetylene; Derivatives thereof
• CPC Class Codes: H10K 85/611 Charge transfer complexes
• CPC Class Codes: H10K 85/621 Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
• CPC Class Codes: H10K 85/761 Biomolecules or bio-macromolecules, e.g. proteins, chlorophyl, lipids or enzymes

Abstract

It is an object of the present invention to provide a method for manufacturing an inexpensive organic TFT which does not depend on an expensive dedicated device and does not expose an organic semiconductor to atmospheric air. Moreover, it is another object of the present invention to provide a method for manufacturing an organic TFT at low temperature so as not to cause a problem of pyrolyzing a material. In view of the foregoing problems, one feature of the present invention is that a film-like protector which serves as a protective film is provided over an organic semiconductor film. The film-like protector can be formed by being fixed to a film-like support body with an adhesive agent or the like.

Claims

1. A semiconductor device comprising:

an insulating film over one surface of a semiconductor film; and

a film-like support body over the other surface of the semiconductor film via an adhesive layer.

18. The semiconductor device according to claim 1, wherein the support body is polyimide, polyester, polyethylene, polyethylene terephthalate (PET), polyethylene naphtalate (PEN), polyethersulfone (PES), or polycarbonate (PC).

24. The semiconductor device according to claim 1, wherein the adhesive layer includes epoxy-based adhesive agent, a urethane-based adhesive agent, an emulsion-based adhesive agent, a synthetic rubber-based adhesive agent, an elastic adhesive agent, or a denatured acrylate based adhesive agent.

30. The semiconductor device according to claim 1, wherein the support body has a thickness of from 0.05 to 0.5 mm.

36. The semiconductor device according to claim 1, wherein the semiconductor film is an organic semiconductor film formed from an organic material.

49. The method for manufacturing a semiconductor device according to claim 1, wherein the support body is polyimide, polyester, polyethylene, polyethylene terephthalate (PET), polyethylene naphtalate (PEN), polyethersulfone (PES), or polycarbonate (PC).

70. The semiconductor device according to claim 1, wherein said semiconductor device is incorporated in at least one selected from the group consisting of a cellular phone, a TV receiver, and an ID card.

2. A semiconductor device comprising:

a substrate having an insulating surface;

a gate electrode provided over the substrate;

a gate insulating film provided over the gate electrode;

a source electrode and a drain electrode provided over the gate insulating film;

a semiconductor film provided over the source electrode and the drain electrode; and

a film-like support body provided over the semiconductor film via an adhesive layer.

13. The semiconductor device according to claim 2, wherein the substrate is a borosilicate glass or a quartz glass.

19. The semiconductor device according to claim 2, wherein the support body is polyimide, polyester, polyethylene, polyethylene terephthalate (PET), polyethylene naphtalate (PEN), polyethersulfone (PES), or polycarbonate (PC).

25. The semiconductor device according to claim 2, wherein the adhesive layer includes epoxy-based adhesive agent, a urethane-based adhesive agent, an emulsion-based adhesive agent, a synthetic rubber-based adhesive agent, an elastic adhesive agent, or a denatured acrylate based adhesive agent.

31. The semiconductor device according to claim 2, wherein the support body has a thickness of from 0.05 to 0.5 mm.

37. The semiconductor device according to claim 2, wherein the semiconductor film is an organic semiconductor film formed from an organic material.

50. The method for manufacturing a semiconductor device according to claim 2, wherein the support body is polyimide, polyester, polyethylene, polyethylene terephthalate (PET), polyethylene naphtalate (PEN), polyethersulfone (PES), or polycarbonate (PC).

71. The semiconductor device according to claim 2, wherein said semiconductor device is incorporated in at least one selected from the group consisting of a cellular phone, a TV receiver, and an ID card.

3. A semiconductor device comprising:

a substrate having an insulating surface;

a gate electrode provided over the substrate;

a gate insulating film provided over the gate electrode;

a semiconductor film provided over the gate insulating film;

a source electrode and a drain electrode provided to cover a part of the semiconductor film;

a film-like support body provided over the semiconductor film, and the source electrode and the drain electrode via an adhesive layer.

14. The semiconductor device according to claim 3, wherein the substrate is a borosilicate glass or a quartz glass.

20. The semiconductor device according to claim 3, wherein the support body is polyimide, polyester, polyethylene, polyethylene terephthalate (PET), polyethylene naphtalate (PEN), polyethersulfone (PES), or polycarbonate (PC).

26. The semiconductor device according to claim 3, wherein the adhesive layer includes epoxy-based adhesive agent, a urethane-based adhesive agent, an emulsion-based adhesive agent, a synthetic rubber-based adhesive agent, an elastic adhesive agent, or a denatured acrylate based adhesive agent.

32. The semiconductor device according to claim 3, wherein the support body has a thickness of from 0.05 to 0.5 mm.

38. The semiconductor device according to claim 3, wherein the semiconductor film is an organic semiconductor film formed from an organic material.

51. The method for manufacturing a semiconductor device according to claim 3, wherein the support body is polyimide, polyester, polyethylene, polyethylene terephthalate (PET), polyethylene naphtalate (PEN), polyethersulfone (PES), or polycarbonate (PC).

72. The semiconductor device according to claim 3, wherein said semiconductor device is incorporated in at least one selected from the group consisting of a cellular phone, a TV receiver, and an ID card.

4. A semiconductor device comprising:

a substrate having an insulating surface,

a switching transistor, a driving transistor, and a light emitting element provided over the substrate,

a film-like support body provided over the switching transistor, the driving transistor, and the light emitting element via an adhesive layer.

15. The semiconductor device according to claim 4, wherein the substrate is a borosilicate glass or a quartz glass.

21. The semiconductor device according to claim 4, wherein the support body is polyimide, polyester, polyethylene, polyethylene terephthalate (PET), polyethylene naphtalate (PEN), polyethersulfone (PES), or polycarbonate (PC).

27. The semiconductor device according to claim 4, wherein the adhesive layer includes epoxy-based adhesive agent, a urethane-based adhesive agent, an emulsion-based adhesive agent, a synthetic rubber-based adhesive agent, an elastic adhesive agent, or a denatured acrylate based adhesive agent.

33. The semiconductor device according to claim 4, wherein the support body has a thickness of from 0.05 to 0.5 mm.

39. The semiconductor device according to claim 4, wherein the semiconductor film is an organic semiconductor film formed from an organic material.

52. The method for manufacturing a semiconductor device according to claim 4, wherein the support body is polyimide, polyester, polyethylene, polyethylene terephthalate (PET), polyethylene naphtalate (PEN), polyethersulfone (PES), or polycarbonate (PC).

73. The semiconductor device according to claim 4, wherein said semiconductor device is incorporated in at least one selected from the group consisting of a cellular phone, a TV receiver, and an ID card.

5. A semiconductor device comprising:

a first conductive film provided over an insulating surface;

an insulating film provided over the first conductive film;

a second conductive film provided over the insulating film;

a semiconductor film provided over the second conductive film; and

a film-like support body provided over the semiconductor film via an adhesive layer.

7. The semiconductor device according to claim 5, wherein the first conductive film serves as a gate electrode.

9. The semiconductor device according to claim 5, wherein the second conductive film serves as a source electrode and a drain electrode.

11. The semiconductor device according to claim 5, wherein the insulating film serves as a gate insulating film.

16. The semiconductor device according to claim 5, wherein the substrate is a borosilicate glass or a quartz glass.

22. The semiconductor device according to claim 5, wherein the support body is polyimide, polyester, polyethylene, polyethylene terephthalate (PET), polyethylene naphtalate (PEN), polyethersulfone (PES), or polycarbonate (PC).

28. The semiconductor device according to claim 5, wherein the adhesive layer includes epoxy-based adhesive agent, a urethane-based adhesive agent, an emulsion-based adhesive agent, a synthetic rubber-based adhesive agent, an elastic adhesive agent, or a denatured acrylate based adhesive agent.

34. The semiconductor device according to claim 5, wherein the support body has a thickness of from 0.05 to 0.5 mm.

40. The semiconductor device according to claim 5, wherein the semiconductor film is an organic semiconductor film formed from an organic material.

53. The method for manufacturing a semiconductor device according to claim 5, wherein the support body is polyimide, polyester, polyethylene, polyethylene terephthalate (PET), polyethylene naphtalate (PEN), polyethersulfone (PES), or polycarbonate (PC).

74. The semiconductor device according to claim 5, wherein said semiconductor device is incorporated in at least one selected from the group consisting of a cellular phone, a TV receiver, and an ID card.

6. A semiconductor device comprising:

a first conductive film provided over an insulating surface;

an insulating film provided over the first conductive film;

a semiconductor film provided over the insulating film;

a second conductive film provided over a part of the semiconductor film; and

a film-like support body provided over the semiconductor film and the second conductive film via an adhesive layer.

8. The semiconductor device according to claim 6, wherein the first conductive film serves as a gate electrode.

10. The semiconductor device according to claim 6, wherein the second conductive film serves as a source electrode and a drain electrode.

12. The semiconductor device according to claim 6, wherein the insulating film serves as a gate insulating film.

17. The semiconductor device according to claim 6, wherein the substrate is a borosilicate glass or a quartz glass.

23. The semiconductor device according to claim 6, wherein the support body is polyimide, polyester, polyethylene, polyethylene terephthalate (PET), polyethylene naphtalate (PEN), polyethersulfone (PES), or polycarbonate (PC).

29. The semiconductor device according to claim 6, wherein the adhesive layer includes epoxy-based adhesive agent, a urethane-based adhesive agent, an emulsion-based adhesive agent, a synthetic rubber-based adhesive agent, an elastic adhesive agent, or a denatured acrylate based adhesive agent.

35. The semiconductor device according to claim 6, wherein the support body has a thickness of from 0.05 to 0.5 mm.

41. The semiconductor device according to claim 6, wherein the semiconductor film is an organic semiconductor film formed from an organic material.

54. The method for manufacturing a semiconductor device according to claim 6, wherein the support body is polyimide, polyester, polyethylene, polyethylene terephthalate (PET), polyethylene naphtalate (PEN), polyethersulfone (PES), or polycarbonate (PC).

75. The semiconductor device according to claim 6, wherein said semiconductor device is incorporated in at least one selected from the group consisting of a cellular phone, a TV receiver, and an ID card.

42. A method for manufacturing a semiconductor device comprising the steps of:

forming an insulating layer over one surface of a semiconductor film; and

fixing a film-like support body to at least cover the other surface of the semiconductor film via an adhesive layer.

55. The method for manufacturing a semiconductor device according to claim 42, wherein the support body is polyimide, polyester, polyethylene, polyethylene terephthalate (PET), polyethylene naphtalate (PEN), polyethersulfone (PES), or polycarbonate (PC).

58. The method for manufacturing the semiconductor device according to claim 42, wherein the adhesive layer includes an epoxy-based adhesive agent, a urethane-based adhesive agent, an emulsion-based adhesive agent, a synthetic rubber-based adhesive agent, an elastic adhesive agent, or a denatured acrylate based adhesive agent.

61. The method for manufacturing a semiconductor device according to claim 42, wherein the support body is fixed over the semiconductor film under reduced pressure.

64. The method for manufacturing a semiconductor device according to claim 42, wherein the semiconductor film is formed by depositing or applying a semiconductor film material.

67. The method for manufacturing a semiconductor device according to claim 42, wherein the semiconductor film is an organic semiconductor film formed from an organic material.

76. The method for manufacturing a semiconductor device according to claim 42, wherein the semiconductor device is incorporated in at least one selected from the group consisting of a cellular phone, a TV receiver, and an ID card.

43. A method for manufacturing a semiconductor device comprising the steps of:

forming a gate electrode over a substrate having an insulating surface;

forming a gate insulating film over the gate electrode;

forming a source electrode and a drain electrode over the gate insulating film;

forming a semiconductor film to be in contact with a part of the gate insulating film and at least with a part of the source electrode and the drain electrode; and

fixing a film-like support body via an adhesive layer to at least cover the semiconductor film.

45. The method for manufacturing a semiconductor device according to claim 43, wherein the gate electrode or the source electrode and the drain electrode is formed from a conductive paste.

47. The method for manufacturing a semiconductor device according to claim 43, wherein the gate electrode or the source electrode and the drain electrode is formed by a screen printing method, a roll coater method, or an ink-jetting method.

56. The method for manufacturing a semiconductor device according to claim 43, wherein the support body is polyimide, polyester, polyethylene, polyethylene terephthalate (PET), polyethylene naphtalate (PEN), polyethersulfone (PES), or polycarbonate (PC).

59. The method for manufacturing the semiconductor device according to claim 43, wherein the adhesive layer includes an epoxy-based adhesive agent, a urethane-based adhesive agent, an emulsion-based adhesive agent, a synthetic rubber-based adhesive agent, an elastic adhesive agent, or a denatured acrylate based adhesive agent.

62. The method for manufacturing a semiconductor device according to claim 43, wherein the support body is fixed over the semiconductor film under reduced pressure.

65. The method for manufacturing a semiconductor device according to claim 43, wherein the semiconductor film is formed by depositing or applying a semiconductor film material.

68. The method for manufacturing a semiconductor device according to claim 43, wherein the semiconductor film is an organic semiconductor film formed from an organic material.

77. The method for manufacturing a semiconductor device according to claim 43, wherein the semiconductor device is incorporated in at least one selected from the group consisting of a cellular phone, a TV receiver, and an ID card.

44. A method for manufacturing a semiconductor device, comprising the steps of:

forming a gate electrode over a substrate having an insulating surface;

forming a gate insulating film over the gate electrode;

forming a semiconductor film over the gate insulating film;

forming a source electrode and a drain electrode to at least cover a part of the semiconductor film; and

fixing a film-like support body via an adhesive layer to at least cover the semiconductor film.

46. The method for manufacturing a semiconductor device according to claim 44, wherein the gate electrode or the source electrode and the drain electrode is formed from a conductive paste.

48. The method for manufacturing a semiconductor device according to claim 44, wherein the gate electrode or the source electrode and the drain electrode is formed by a screen printing method, a roll coater method, or an ink-jetting method.

57. The method for manufacturing a semiconductor device according to claim 44, wherein the support body is polyimide, polyester, polyethylene, polyethylene terephthalate (PET), polyethylene naphtalate (PEN), polyethersulfone (PES), or polycarbonate (PC).

60. The method for manufacturing the semiconductor device according to claim 44, wherein the adhesive layer includes an epoxy-based adhesive agent, a urethane-based adhesive agent, an emulsion-based adhesive agent, a synthetic rubber-based adhesive agent, an elastic adhesive agent, or a denatured acrylate based adhesive agent.

63. The method for manufacturing a semiconductor device according to claim 44, wherein the support body is fixed over the semiconductor film under reduced pressure.

66. The method for manufacturing a semiconductor device according to claim 44, wherein the semiconductor film is formed by depositing or applying a semiconductor film material.

69. The method for manufacturing a semiconductor device according to claim 44, wherein the semiconductor film is an organic semiconductor film formed from an organic material.

78. The method for manufacturing a semiconductor device according to claim 44, wherein the semiconductor device is incorporated in at least one selected from the group consisting of a cellular phone, a TV receiver, and an ID card.