Semiconductor device with modified mobility and thin film transistor having the same
First Claim
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1. A semiconductor device comprising a silicon-based active area comprising high and low mobility areas over an electron mobility path.
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Abstract
Provided are a semiconductor device including an active area which is defined as high and low mobility areas and a thin film transistor having the semiconductor device. The mobility of the active area can be lowered to a level enough to satisfy the requirement of the semiconductor device. The lowering of the mobility of the active area can contribute to reducing mobility deviation between semiconductor devices. As a result, the quality of a flat panel display adopting a large-scale semiconductor device can be greatly improved.
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Citations
12 Claims
- 1. A semiconductor device comprising a silicon-based active area comprising high and low mobility areas over an electron mobility path.
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7. A thin film transistor comprising:
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a Si-based channel;
source and drain which are formed beside respective sides of the Si-based channel;
a gate which applies an electric field to the Si-based channel; and
an insulating layer which is interposed between the active area and the gate, wherein the Si-based channel comprises high and low mobility areas over an electron mobility path. - View Dependent Claims (8, 9, 10, 11, 12)
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