Method for manufacturing an organic semiconductor element

• US 20050140840A1
• Filed: 12/15/2004
• Published: 06/30/2005
• Est. Priority Date: 12/26/2003
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Hirakata, Yoshiharu, Ishitani, Tetsuji, Imahayashi, Ryota, Fukai, Shuji
• Granted Patent: US 7,659,138 B2
• Time in Patent Office: Days
• US Class Current: 349/43
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: G02F 2202/025 thermocurable
• CPC Class Codes: H10K 10/466 Lateral bottom-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 71/10 Deposition of organic active material
• CPC Class Codes: H10K 85/10 Organic polymers or oligomers
• CPC Class Codes: H10K 85/111 comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
• CPC Class Codes: H10K 85/113 Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
• CPC Class Codes: H10K 85/114 Poly-phenylenevinylene; Derivatives thereof
• CPC Class Codes: H10K 85/611 Charge transfer complexes
• CPC Class Codes: H10K 85/621 Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide

Abstract

In manufacturing a device using an organic TFT, it is essential to develop an element in which a channel length is short or a channel width is narrow to downsize a device. Based on the above, it is an object of the present invention to provide an organic TFT in which characteristic is improved. In view of the foregoing problem, one feature of the present invention is that an element is baked after an organic semiconductor film is deposited. More specifically, one feature of the present invention is that the organic semiconductor film is heated under atmospheric pressure or under reduced pressure. Moreover, a baking process may be carried out in an inert gas atmosphere.

Claims

1. A method for manufacturing an organic semiconductor element, comprising the steps of:

forming an organic semiconductor film; and

heating the organic semiconductor film under atmospheric pressure or under reduced pressure.

6. The method for manufacturing an organic semiconductor element according to claim 1,

wherein the organic semiconductor film is heated in an inert gas atmosphere.

11. The method for manufacturing an organic semiconductor element according to claim 1,

wherein the organic semiconductor film is heated at a temperature which is less than the melting point of the organic semiconductor film.

16. The method for manufacturing an organic semiconductor element according to claim 1,

wherein the organic semiconductor film is heated at a temperature of less than 250°

C.

21. The method for manufacturing an organic semiconductor element according to claim 1,

wherein the organic semiconductor film is heated at a temperature in which average value of the grain size of the organic semiconductor film does not grow 10% or more.

26. The method for manufacturing an organic semiconductor element according to claim 1,

wherein the organic semiconductor film is formed by depositing pentacene by using a vacuum vapor deposition method.

31. The method for manufacturing an organic semiconductor element according to claim 1,

wherein the organic semiconductor film is heated in a processing chamber in which the organic semiconductor film is formed.

36. The method for manufacturing an organic semiconductor element according to claim 1,

wherein the gate electrode or the source electrode and the drain electrode is formed by using a sputtering method, an ink-jetting method, a spin coating method, or a vapor deposition method.

41. The method for manufacturing an organic semiconductor element according to claim 1,

wherein the gate electrode or the source electrode and the drain electrode is formed by using a conductive film having tungsten.

46. The method for manufacturing an organic semiconductor element according to claim 1, wherein the organic semiconductor element is applied to an electronic apparatus selected from the group consisting of a cellular phone, a TV receiver, and an ID card.

2. A method for manufacturing an organic semiconductor element, comprising the steps of:

forming a gate electrode;

forming an organic semiconductor film over the gate electrode;

heating the organic semiconductor film under atmospheric pressure or under reduced pressure; and

forming a source electrode and a drain electrode over the organic semiconductor film which is heated.

7. The method for manufacturing an organic semiconductor element according to claim 2,

wherein the organic semiconductor film is heated in an inert gas atmosphere.

12. The method for manufacturing an organic semiconductor element according to claim 2,

wherein the organic semiconductor film is heated at a temperature which is less than the melting point of the organic semiconductor film.

17. The method for manufacturing an organic semiconductor element according to claim 2,

wherein the organic semiconductor film is heated at a temperature of less than 250°

C.

22. The method for manufacturing an organic semiconductor element according to claim 2,

wherein the organic semiconductor film is heated at a temperature in which average value of the grain size of the organic semiconductor film does not grow 10% or more.

27. The method for manufacturing an organic semiconductor element according to claim 2,

wherein the organic semiconductor film is formed by depositing pentacene by using a vacuum vapor deposition method.

32. The method for manufacturing an organic semiconductor element according to claim 2,

wherein the organic semiconductor film is heated in a processing chamber in which the organic semiconductor film is formed.

37. The method for manufacturing an organic semiconductor element according to claim 2,

wherein the gate electrode or the source electrode and the drain electrode is formed by using a sputtering method, an ink-jetting method, a spin coating method, or a vapor deposition method.

42. The method for manufacturing an organic semiconductor element according to claim 2,

wherein the gate electrode or the source electrode and the drain electrode is formed by using a conductive film having tungsten.

47. The method for manufacturing an organic semiconductor element according to claim 2, wherein the organic semiconductor element is applied to an electronic apparatus selected from the group consisting of a cellular phone, a TV receiver, and an ID card.

3. A method for manufacturing an organic semiconductor element, comprising the steps of:

forming a gate electrode;

forming a source electrode or a drain electrode over the gate electrode;

forming an organic semiconductor film over the source electrode and the drain electrode; and

heating the organic semiconductor film under atmospheric pressure or under reduced pressure.

8. The method for manufacturing an organic semiconductor element according to claim 3,

wherein the organic semiconductor film is heated in an inert gas atmosphere.

13. The method for manufacturing an organic semiconductor element according to claim 3,

wherein the organic semiconductor film is heated at a temperature which is less than the melting point of the organic semiconductor film.

18. The method for manufacturing an organic semiconductor element according to claim 3,

wherein the organic semiconductor film is heated at a temperature of less than 250°

C.

23. The method for manufacturing an organic semiconductor element according to claim 3,

wherein the organic semiconductor film is heated at a temperature in which average value of the grain size of the organic semiconductor film does not grow 10% or more.

28. The method for manufacturing an organic semiconductor element according to claim 3,

wherein the organic semiconductor film is formed by depositing pentacene by using a vacuum vapor deposition method.

33. The method for manufacturing an organic semiconductor element according to claim 3,

wherein the organic semiconductor film is heated in a processing chamber in which the organic semiconductor film is formed.

38. The method for manufacturing an organic semiconductor element according to claim 3,

wherein the gate electrode or the source electrode and the drain electrode is formed by using a sputtering method, an ink-jetting method, a spin coating method, or a vapor deposition method.

43. The method for manufacturing an organic semiconductor element according to claim 3,

wherein the gate electrode or the source electrode and the drain electrode is formed by using a conductive film having tungsten.

48. The method for manufacturing an organic semiconductor element according to claim 3, wherein the organic semiconductor element is applied to an electronic apparatus selected from the group consisting of a cellular phone, a TV receiver, and an ID card.

4. A method for manufacturing an organic semiconductor element, comprising the steps of:

forming an organic semiconductor film to be in contact with an inorganic film; and

heating the organic semiconductor film under atmospheric pressure or under reduced pressure.

9. The method for manufacturing an organic semiconductor element according to claim 4,

wherein the organic semiconductor film is heated in an inert gas atmosphere.

14. The method for manufacturing an organic semiconductor element according to claim 4,

wherein the organic semiconductor film is heated at a temperature which is less than the melting point of the organic semiconductor film.

19. The method for manufacturing an organic semiconductor element according to claim 4,

wherein the organic semiconductor film is heated at a temperature of less than 250°

C.

24. The method for manufacturing an organic semiconductor element according to claim 4,

wherein the organic semiconductor film is heated at a temperature in which average value of the grain size of the organic semiconductor film does not grow 10% or more.

29. The method for manufacturing an organic semiconductor element according to claim 4,

wherein the organic semiconductor film is formed by depositing pentacene by using a vacuum vapor deposition method.

34. The method for manufacturing an organic semiconductor element according to claim 4,

wherein the organic semiconductor film is heated in a processing chamber in which the organic semiconductor film is formed.

39. The method for manufacturing an organic semiconductor element according to claim 4,

wherein the gate electrode or the source electrode and the drain electrode is formed by using a sputtering method, an ink-jetting method, a spin coating method, or a vapor deposition method.

44. The method for manufacturing an organic semiconductor element according to claim 4,

wherein the gate electrode or the source electrode and the drain electrode is formed by using a conductive film having tungsten.

49. The method for manufacturing an organic semiconductor element according to claim 4, wherein the organic semiconductor element is applied to an electronic apparatus selected from the group consisting of a cellular phone, a TV receiver, and an ID card.

5. A method for manufacturing an organic semiconductor element, comprising the steps of:

forming an organic semiconductor film to be in contact with a gate insulating film; and

heating the organic semiconductor film under atmospheric pressure or under reduced pressure.

10. The method for manufacturing an organic semiconductor element according to claim 5,

wherein the organic semiconductor film is heated in an inert gas atmosphere.

15. The method for manufacturing an organic semiconductor element according to claim 5,

wherein the organic semiconductor film is heated at a temperature which is less than the melting point of the organic semiconductor film.

20. The method for manufacturing an organic semiconductor element according to claim 5,

wherein the organic semiconductor film is heated at a temperature of less than 250°

C.

25. The method for manufacturing an organic semiconductor element according to claim 5,

wherein the organic semiconductor film is heated at a temperature in which average value of the grain size of the organic semiconductor film does not grow 10% or more.

30. The method for manufacturing an organic semiconductor element according to claim 5,

wherein the organic semiconductor film is formed by depositing pentacene by using a vacuum vapor deposition method.

35. The method for manufacturing an organic semiconductor element according to claim 5,

wherein the organic semiconductor film is heated in a processing chamber in which the organic semiconductor film is formed.

40. The method for manufacturing an organic semiconductor element according to claim 5,

wherein the gate electrode or the source electrode and the drain electrode is formed by using a sputtering method, an ink-jetting method, a spin coating method, or a vapor deposition method.

45. The method for manufacturing an organic semiconductor element according to claim 5,

wherein the gate electrode or the source electrode and the drain electrode is formed by using a conductive film having tungsten.

50. The method for manufacturing an organic semiconductor element according to claim 5, wherein the organic semiconductor element is applied to an electronic apparatus selected from the group consisting of a cellular phone, TV receiver, and an ID card.