Transflective type liquid crystal display device and method for fabricating the same

• US 20050140871A1
• Filed: 10/20/2004
• Published: 06/30/2005
• Est. Priority Date: 12/29/2003
• Status: Active Grant

• Current Assignee: LG Display Co., Ltd.
• Original Assignee: LG Philips LCD Company Limited (LG Display Co., Ltd.)
• Inventors: Hwang, Han Wook
• Granted Patent: US 7,852,438 B2
• Time in Patent Office: Days
• US Class Current: 349/114
• CPC Class Codes: G02F 1/133555 Transflectors
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence

Abstract

A transflective type LCD device includes a substrate having gate and data lines crossing each other to define pixel regions, a reflective part and a transmitting part in each pixel region, a pixel electrode in the reflective part and the transmitting part of the pixel region, a reflective electrode in the reflective part of the pixel region, a thin film transistor having source and drain regions at a crossing of the gate and data lines for transmitting a signal of the data line to the pixel electrode in accordance with a signal of the gate line, and an electrode electrically connecting the source region of the thin film transistor with a data electrode of the data line.

Claims

1. A transflective type LCD device comprising:

a substrate having gate and data lines crossing each other to define pixel regions;

a reflective part and a transmitting part in each pixel region;

a pixel electrode in the reflective part and the transmitting part of the pixel region;

a reflective electrode in the reflective part of the pixel region;

a thin film transistor having source and drain regions at a crossing of the gate and data lines for transmitting a signal of the data line to the pixel electrode in accordance with a signal of the gate line; and

an electrode electrically connecting the source region of the thin film transistor with a data electrode of the data line.

2. The transflective type LCD device of claim 1, further comprising a common electrode line located on the reflective part of the pixel region in parallel with the gate line.

3. The transflective type LCD device of claim 1, wherein the reflective electrode is formed of one of aluminum (Al) and aluminum neodymium (AlNd).

4. The transflective type LCD device of claim 1, further comprising an organic insulating layer disposed below the reflective electrode, having a transmitting hole exposing a portion of the transmitting part, and having a data contact hole, a source contact hole, and a drain contact hole exposing portions of the data electrode, the source region, and the drain region, respectively.

5. The transflective type LCD device of claim 4, wherein the organic insulating layer has an uneven surface on which the reflective electrodes have an uneven surface.

6. The transflective type LCD device of claim 4, further comprising a buffer layer on an entire surface of the substrate to prevent the surface of the substrate from being damaged when the transmitting hole is formed therein.

7. The transflective type LCD device of claim 6, wherein the buffer layer includes one of silicon nitride (SiN_x) and silicon nitro-oxide (SiNxOy).

8. The transflective type LCD device of claim 1, wherein the pixel electrode is disposed on the reflective electrode.

9. The transflective type LCD device of claim 1, wherein the electrode includes the reflective electrode.

10. The transflective type LCD device of claim 1, wherein the electrode includes the pixel electrode.

11. The transflective type LCD device of claim 4, further comprising a gate insulating layer between the gate line and a semiconductor layer of the thin film transistor, a data insulating layer between the semiconductor layer and the data line, and an insulating interlayer between the organic insulating layer and the gate insulating layer.

12. The transflective type LCD device of claim 1, wherein the pixel electrode directly contact the drain region.

13. The transflective type LCD device of claim 1, wherein the reflective electrode directly contact the drain region.

14. A method for fabricating a transflective type LCD device, comprising:

preparing a substrate having pixel regions, each pixel region having a reflective part and a transmitting part;

forming a pixel electrode in the reflective part and the transmitting part of the pixel region;

forming a reflective electrode in the reflective part of the pixel region;

forming a thin film transistor having source and drain regions at a crossing of the gate and data lines for transmitting a signal of the data line to the pixel electrode in accordance with a signal of the gate line; and

forming an electrode electrically connecting the source region of the thin film transistor with a data electrode of the data line.

15. The method of claim 14, further comprising forming a common electrode line located on the reflective part of the pixel region in parallel with the gate line.

16. The method of claim 14, further comprising forming an organic insulating layer disposed below the reflective electrode, having a transmitting hole exposing a portion of the transmitting part, and having a data contact hole, a source contact hole, and a drain contact hole exposing portions of the data electrode, the source region, and the drain region, respectively.

17. The method of claim 16, wherein the organic insulating layer has an uneven surface on which the reflective electrodes have an uneven surface.

18. The method of claim 16, further comprising forming a buffer layer on an entire surface of the substrate to prevent the surface of the substrate from being damaged when the transmitting hole is formed therein.

19. The method of claim 14, wherein the pixel electrode is disposed on the reflective electrode.

20. The method of claim 14, wherein the electrode includes the reflective electrode.

21. The method claim 14, wherein the electrode includes the pixel electrode.

22. The method claim 14, further comprising forming a gate insulating layer between the gate line and a semiconductor layer of the thin film transistor, a data insulating layer between the semiconductor layer and the data line, and an insulating interlayer between the organic insulating layer and the gate insulating layer.

23. The method of claim 14, wherein the pixel electrode directly contact the drain region.

24. The method of claim 14, wherein the reflective electrode directly contact the drain region.