Lithographic apparatus, device manufacturing methods, mask and method of characterizing a mask and/or pellicle
First Claim
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1. A lithographic projection apparatus comprising:
- an illumination system for supplying a projection beam of radiation;
a support structure for supporting a patterning device, the patterning device serving to pattern the projection beam according to a desired pattern;
a substrate table for holding a substrate;
a projection system for projecting the patterned beam onto a target portion of the substrate;
a layer, substantially transparent to said projection beam but having a refractive index different than the surrounding medium, in the optical path of said projection beam between said patterning device and said substrate;
a storage device adapted to store information relating to the physical and/or optical characteristics of said layer; and
a controller adapted to control at least one of said projection system, said radiation system, said substrate table and said support structure in response to information stored in said storage device to compensate for imaging aberrations caused by said layer other than a displacement of an apparent mask position along an optical axis of the apparatus.
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Abstract
A thick pellicle is allowed to have a non-flat shape and its shape is characterized to calculate corrections to be applied in exposures to compensate for the optical effects of the pellicle. The pellicle may be mounted so as to adopt a one-dimensional shape under the influence of gravity to make the compensation easier.
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Citations
20 Claims
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1. A lithographic projection apparatus comprising:
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an illumination system for supplying a projection beam of radiation;
a support structure for supporting a patterning device, the patterning device serving to pattern the projection beam according to a desired pattern;
a substrate table for holding a substrate;
a projection system for projecting the patterned beam onto a target portion of the substrate;
a layer, substantially transparent to said projection beam but having a refractive index different than the surrounding medium, in the optical path of said projection beam between said patterning device and said substrate;
a storage device adapted to store information relating to the physical and/or optical characteristics of said layer; and
a controller adapted to control at least one of said projection system, said radiation system, said substrate table and said support structure in response to information stored in said storage device to compensate for imaging aberrations caused by said layer other than a displacement of an apparent mask position along an optical axis of the apparatus. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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- 12. A mask having a pellicle fixed to a frame in spaced relation thereto, wherein said pellicle is fixed to said frame such that in use, it adopts a shape that introduces distortions that are substantially compensatable for by adjustment of available system parameters of a lithographic apparatus with which the mask is to be used.
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16. A method of attaching a pellicle to a mask, comprising:
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measuring the shape of said pellicle;
determining an optimum position of said pellicle relative to said mask; and
attaching said pellicle to said mask substantially at said optimum position.
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17. A method comprising:
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loading a mask into a lithographic projection apparatus;
illuminating the mask with exposure radiation;
projecting an aerial image of the illuminated mask; and
measuring a plane of best focus of the images of a plurality of alignment marks using an image sensor;
wherein said plurality of alignment marks are spaced apart in the scanning direction or the direction of the illumination field of the lithographic apparatus. - View Dependent Claims (18)
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19. A device manufacturing method comprising:
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patterning a projection beam of radiation with a pattern in its cross-section using a mask having a pellicle or fixed relation thereto;
projecting the patterned beam of radiation onto a target portion of a layer of radiation-sensitive material on a substrate; and
prior to an exposure characterizing a shape of the mask by the method of;
measuring the shape of said pellicle;
determining an optimum position of said pellicle relative to said mask;
attaching said pellicle to said mask substantially at said optimum position; and
correcting exposure parameters based on the characterizing.
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20. A device manufacturing method comprising:
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patterning a projection beam of radiation with a pattern in its cross-section using a mask having a pellicle or fixed relation thereto;
projecting the patterned beam of radiation onto a target portion of a layer of radiation-sensitive material on a substrate; and
prior to an exposure characterizing a shape of the mask by the method of;
measuring the shape of said pellicle;
determining an optimum position of said pellicle relative to said mask;
attaching said pellicle to said mask substantially at said optimum position; and
correcting parameters pertaining to at least one of a radiation system, a projection system, a position of the mask and a position of the substrate to compensate for aberrations other than a shift in apparent position of the mask in the direction of the optical axis of said projection system caused by said pellicle, said corrections having been determined from information relating to physical and/or optical characteristics of said pellicle.
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Specification