Photo mask and method for fabricating the same

• US 20050142461A1
• Filed: 12/30/2004
• Published: 06/30/2005
• Est. Priority Date: 12/31/2003
• Status: Abandoned Application

• Current Assignee: DONGBU ELECTRONICS CO., LTD. (DB HiTek Co., Ltd.)
• Original Assignee: Dongbuanam Semiconductor, Inc. (DB HiTek Co., Ltd.)
• Inventors: Lee, Jun Seok
• Application Number:
  US11/024,793
• Publication Number:
  US 20050142461A1
• Time in Patent Office: Days
• US Class Current: 430/5
• CPC Class Codes: G03F 1/32 Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion,; Preparation thereof

Abstract

A photo mask and a method for fabricating the same are described, in which a transparent substrate is covered with a phase inversion light-transmitting layer, a plurality of small sized light-transmitting holes are aggregately formed at dense intervals in an isolated pattern hole region of the phase inversion light-transmitting layer, and lights transmitting the light-transmitting holes and the phase inversion light-transmitting layer are guided to cause a series of interference phenomena such as sidelobe phenomena, so that the isolated pattern hole can sufficiently receive lights as the light intensity increases by way of the sidelobe phenomena. If the sidelobe phenomena regarded as a defect factor are used to allow the isolated pattern hole to sufficiently receive lights after aggregately forming the small sized light-transmitting holes in the isolated pattern hole region of the transparent substrate, the step of additionally forming serif holes is naturally skipped, thereby improving yield of the product and controlling increase of the production cost.

Claims

1. A photo mask comprising:

a transparent substrate;

a phase inversion light-transmitting layer covering an entire surface of the transparent substrate; and

a plurality of small sized light-transmitting holes, each separated from a next closest hole by a predetermined interval and each formed as a separate hole through a predetermined region of the phase inversion light-transmitting layer, wherein

light passing through the plurality of holes cooperates to form a common exposure region to form one feature in a target material, and

light shifted in phase by said phase inversion light-transmitting layer adding in phase with light passing through at least one of said plurality of holes in said common exposure region.

2. The photo mask of claim 1, wherein the phase inversion light-transmitting layer comprises a material that attenuates light passing therethrough by a predetermined amount.

3. The photo mask of claim 1, wherein the phase inversion light-transmitting layer has a light-transmitting ratio of 3% to 12%.

4. The photo mask of claim 1, wherein the phase inversion light-transmitting layer is disposed between the respective plurality of holes so as to separate one hole from another, and a material comprising the phase inversion light-transmitting layer between the respective plurality of holes has a light-transmitting ratio greater than that of the phase inversion light-transmitting layer arranged outside the light-transmitting holes.

5. The photo mask of claim 4, wherein the phase inversion light-transmitting layer disposed between the respective light-transmitting holes has a light-transmitting ratio of 5% to 12% while the phase inversion light-transmitting layer arranged outside the light-transmitting holes has a light-transmitting ratio of 3% to 7%.

6. The photo mask of claim 4, wherein the phase inversion light-transmitting layer arranged between the respective light-transmitting holes includes a single layered structure of Cr while the phase inversion light-transmitting layer arranged outside the light-transmitting holes includes a multi-layered structure selected from any one of Cr/MoSiN, Cr/Si₃N₄, and Cr/SiO₂.

7. The photo mask of claim 1, wherein the light-transmitting holes are separated from a nearest neighboring hole at a single common interval.

8. The photo mask of claim 1, wherein the light-transmitting holes have a size of 0.02 μ

m to 0.06 μ

m.

9. A method for fabricating a photo mask comprising:

forming a phase inversion light-transmitting layer on an entire surface of a transparent substrate; and

forming a plurality of small sized light-transmitting holes, each separated from a next closest hole by a predetermined interval and each formed as a separate hole through a predetermined region of the phase inversion light-transmitting layer, wherein

light passing through the plurality of holes cooperates to form a common exposure region to form one feature in a target material, and

light shifted in phase by said phase inversion light-transmitting layer adding in phase with light passing through at least one of said plurality of holes in said common exposure region.

10. A method for fabricating a photo mask comprising:

sequentially depositing first and second phase inversion light-transmitting layers on an entire surface of a transparent substrate;

forming a plurality of small sized light-transmitting holes each separated from a next closest hole by a predetermined interval and each formed as a separate hole through a predetermined region of the phase inversion light-transmitting layers; and

removing the second phase inversion light-transmitting layer arranged between the respective light-transmitting holes.