Thin film capacitor and its manufacture method

• US 20050142733A1
• Filed: 02/28/2005
• Published: 06/30/2005
• Est. Priority Date: 08/29/2002
• Status: Active Grant

• Current Assignee: Fujitsu Limited
• Original Assignee: Fujitsu Limited
• Inventors: Shioga, Takeshi, Baniecki, John David, Kurihara, Kazuaki
• Granted Patent: US 7,326,989 B2
• Time in Patent Office: Days
• US Class Current: 438/250
• CPC Class Codes: H01G 4/33 Thin- or thick-film capacitors thin- or thick-film circuits H01L27/00; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor H01L28/40
• CPC Class Codes: H01L 27/0629 in combination with diodes, or resistors, or capacitors
• CPC Class Codes: H01L 27/0805 Capacitors only
• CPC Class Codes: H01L 28/40 Capacitors

Abstract

A thin film capacitor is provided which includes a single crystal high dielectric constant dielectric layer. The thin film capacitor has a single crystal silicon substrate, a single crystal intermediate layer epitaxially grown on the single crystal silicon substrate, a single crystal lower electrode epitaxially grown on the single crystal intermediate layer, a single crystal high dielectric constant dielectric layer epitaxially grown on the lower electrode layer, an upper electrode layer formed above the single crystal high dielectric constant dielectric layer, and a plurality of conductor terminals connected to the lower electrode layer and upper electrode layer at a plurality of positions.

Claims

1. A thin film capacitor comprising:

a single crystal silicon substrate;

a single crystal intermediate layer epitaxially grown on said single crystal silicon substrate;

a single crystal lower electrode epitaxially grown on said single crystal intermediate layer;

a single crystal high dielectric constant dielectric layer epitaxially grown on said lower electrode layer;

an upper electrode layer formed above said single crystal high dielectric constant dielectric layer; and

a plurality of conductor terminals connected to said lower electrode layer and upper electrode layer at a plurality of positions.

2. The thin film capacitor according to claim 1, wherein said single crystal intermediate layer is made of at least one selected from a group consisting of SrTiO₃, CeO₂, ZrO₂, MgAl₂O₄ and TiAlN.

3. The thin film capacitor according to claim 1, wherein said lower electrode includes a lamination of a lower layer made of at least one selected from a group consisting of Ir, Rh and Ru and a Pt layer formed on the lower layer.

4. The thin film capacitor according to claim 1, wherein said high dielectric constant dielectric layer is made of oxide having a perovskite crystal structure.

5. The thin film capacitor according to claim 1, wherein the single crystal silicon substrate has a principal surface of a (100) plane or (111) plane.

6. The thin film capacitor according to claim 1, further comprising a lamination of at least a pair of single crystal intermediate electrode layer and single crystal intermediate high dielectric constant dielectric layer disposed on the single crystal intermediate electrode layer, said lamination layer being disposed between said single crystal high dielectric constant dielectric layer and said upper electrode layer.

7. The thin film capacitor according to claim 1, further comprising a layer formed on a bottom surface of said silicon single crystal substrate, said layer being made of a material having a thermal expansion constant larger than that of silicon.

8. The thin film capacitor according to claim 1, wherein:

said single crystal silicon substrate has through holes; and

the thin film capacitor further comprises;

through conductors formed in said through holes; and

conductive terminals connected to said through conductors.

9. The thin film capacitor according to claim 1, further comprising a multilayer thin film wiring structure formed on said upper electrode layer, said wiring structure including an insulating layer and wirings and a plurality of through conductors buried in said insulating layer.

10. A manufacture method for a thin film capacitor, comprising the steps of:

epitaxially growing an intermediate layer on a surface of a single crystal silicon substrate;

epitaxially growing a lower electrode layer on said intermediate layer;

epitaxially growing a single crystal high dielectric constant dielectric layer on said lower electrode layer; and

forming an upper electrode layer above said single crystal high dielectric constant dielectric layer.