Method of manufacturing semiconductor device
First Claim
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1. A method of manufacturing a semiconductor device, comprising:
- forming a semiconductor film having an amorphous structure;
adding a metal element to the semiconductor film having an amorphous structure;
crystallizing the semiconductor film having an amorphous structure to form a semiconductor film having a crystalline structure;
forming an insulating film over the semiconductor film having a crystalline structure;
forming a resist mask over the insulating film;
patterning the insulating film by using the resist mask for forming a mask;
removing the resist mask;
selectively adding a rare gas element to the semiconductor film having a crystalline structure by using the mask to form an impurity region;
gettering the metal element to the impurity region; and
removing the impurity region.
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Abstract
According to the present invention, an impurity region, to which a rare gas element (also called a rare gas) and one kind or a plurality of kinds of elements selected from the group consisting of H, H2, O, O2, and P are added, are formed in a semiconductor film having a crystalline structure, using a mask, and gettering for segregating a metal element contained in the semiconductor film to the impurity region by heat treatment. Thereafter, pattering is conducted using the mask, whereby a semiconductor layer made of the semiconductor film having a crystalline structure is formed.
113 Citations
9 Claims
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1. A method of manufacturing a semiconductor device, comprising:
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forming a semiconductor film having an amorphous structure;
adding a metal element to the semiconductor film having an amorphous structure;
crystallizing the semiconductor film having an amorphous structure to form a semiconductor film having a crystalline structure;
forming an insulating film over the semiconductor film having a crystalline structure;
forming a resist mask over the insulating film;
patterning the insulating film by using the resist mask for forming a mask;
removing the resist mask;
selectively adding a rare gas element to the semiconductor film having a crystalline structure by using the mask to form an impurity region;
gettering the metal element to the impurity region; and
removing the impurity region. - View Dependent Claims (2, 3)
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4. A method of manufacturing a semiconductor device, comprising:
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forming a semiconductor film having an amorphous structure;
adding a metal element to the semiconductor film having an amorphous structure;
crystallizing the semiconductor film having an amorphous structure to form a semiconductor film having a crystalline structure;
forming an insulating film over the semiconductor film having a crystalline structure;
forming a resist mask over the insulating film;
selectively adding a rare gas element to the semiconductor film having a crystalline structure by using the resist mask to form an impurity region;
removing the resist mask;
gettering the metal element to the impurity region;
removing the insulating film; and
removing the impurity region. - View Dependent Claims (5, 6)
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7. A method of manufacturing a semiconductor device, comprising:
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forming a semiconductor film having an amorphous structure;
adding a metal element to the semiconductor film having an amorphous structure;
crystallizing the semiconductor film having an amorphous structure to form a semiconductor film having a crystalline structure;
forming an insulating film over the semiconductor film having a crystalline structure;
forming a resist mask over the insulating film;
patterning the insulating film by using the resist mask for forming a mask;
selectively adding a rare gas element to the semiconductor film having a crystalline structure by using the resist mask and the mask to form an impurity region;
removing the resist mask;
gettering the metal element to the impurity region; and
removing the impurity region. - View Dependent Claims (8, 9)
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Specification