Gap-fill depositions in the formation of silicon containing dielectric materials
First Claim
1. A method to form a silicon oxide layer, the method comprising:
- providing a continuous flow of a silicon-containing precursor to a chamber housing a substrate, wherein the silicon-containing precursor is selected from the group consisting of TMOS, TEOS, OMTS, OMCTS, and TOMCATS;
providing a flow of an oxidizing precursor to the chamber;
causing a reaction between the silicon-containing precursor and the oxidizing precursor to form a silicon oxide layer; and
varying over time a ratio of the silicon-containing precursor;
oxidizing precursor flowed into the chamber to alter a rate of deposition of the silicon oxide on the substrate.
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Abstract
A method to form a silicon oxide layer, where the method includes the step of providing a continuous flow of a silicon-containing precursor to a chamber housing a substrate, where the silicon-containing precursor is selected from TMOS, TEOS, OMTS, OMCTS, and TOMCATS. The method may also include the steps of providing a flow of an oxidizing precursor to the chamber, and causing a reaction between the silicon-containing precursor and the oxidizing precursor to form a silicon oxide layer. The method may further include varying over time a ratio of the silicon-containing precursor:oxidizing precursor flowed into the chamber to alter a rate of deposition of the silicon oxide on the substrate.
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Citations
20 Claims
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1. A method to form a silicon oxide layer, the method comprising:
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providing a continuous flow of a silicon-containing precursor to a chamber housing a substrate, wherein the silicon-containing precursor is selected from the group consisting of TMOS, TEOS, OMTS, OMCTS, and TOMCATS;
providing a flow of an oxidizing precursor to the chamber;
causing a reaction between the silicon-containing precursor and the oxidizing precursor to form a silicon oxide layer; and
varying over time a ratio of the silicon-containing precursor;
oxidizing precursor flowed into the chamber to alter a rate of deposition of the silicon oxide on the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A substrate processing apparatus comprising:
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a processing chamber;
a substrate support configured to support a substrate within the processing chamber;
a precursor delivery system configured to receive a silicon-containing precursor and an oxidizing precursor and to deliver the silicon-containing precursor and the oxidizing precursor to the processing chamber, wherein the silicon-containing precursor is selected from the group consisting of TMOS, TEOS, OMTS, OMCTS, and TOMCATS;
a controller configured to control the precursor delivery system and the substrate support, wherein the controller is operable to;
(i) direct the precursor delivery system to introduce the silicon-containing precursor and the oxidizing precursor into processing chamber at a first relative concentration; and
(ii) direct the precursor deliver system to vary the concentration of the silicon-containing precursor relative to the oxidizing precursor over time to deposit silicon oxide on the substrate, as the silicon-containing precursor is continuously flowed into the chamber. - View Dependent Claims (16, 17, 18, 19)
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20. A chemical vapor deposition method for forming a dielectric material in a trench formed on a substrate, the method comprising:
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providing a hydroxyl-containing precursor in the process chamber;
flowing a silicon-containing precursor into a process chamber housing the substrate;
flowing an oxidizing gas into the chamber; and
causing a reaction between the silicon-containing precursor, oxidizing gas and hydroxyl-containing precursor to form the dielectric material in the trench; and
increasing over time a ratio of the silicon-containing precursor to the oxidizing gas flowed into the chamber to alter a rate of deposition of the dielectric material.
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Specification