Light-emitting diode
First Claim
1. A light-emitting diode (LED) device, comprising:
- a substrate;
a first semiconductor layer, formed on top of the substrate;
an insulating layer, formed on top of the first semiconductor layer;
a mesa area, formed on the insulting layer and exposing the surface of the first semiconductor layer; and
an LED structure formed on the exposed surface of the first semiconductor layer;
where the LED structure being a light-emitting active layer and a p-type GaN III-V group compound layer, the p-type GaN III-V group compound layer being connected to a p-type low-resistance ohm contact, and an n-type GaN III-V group compound layer being connected to an n-type low-resistance ohm contact to provide a forward bias.
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Accused Products
Abstract
A light-emitting diode device is provided with the following manufacturing method: forming an n-GaN layer on a substrate; growing an SiO2 layer on the n-GaN surface, and using the photo-lithography process to expose the n-GaN within the mesa area; using MOCVD to grow an LED structure in the epitaxy within the mesa area, the formed structure being a p-n coplanar structure due to the selective area characteristic; and finally, forming the electrodes on the structure to complete an LED device. The device can be manufactured without the etching process to form the p-n coplanar structure. In comparison to other conventional manufacturing methods, the method simplifies the manufacturing process, and avoids many problems associated with etching, including non-uniform etching, overly rough surface, etching damages, and current leakage. Furthermore, SiO2 is used as a scattering layer to prevent emitted light from internally reflected, and therefore, improves the external quantum efficiency.
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Citations
23 Claims
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1. A light-emitting diode (LED) device, comprising:
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a substrate;
a first semiconductor layer, formed on top of the substrate;
an insulating layer, formed on top of the first semiconductor layer;
a mesa area, formed on the insulting layer and exposing the surface of the first semiconductor layer; and
an LED structure formed on the exposed surface of the first semiconductor layer;
where the LED structure being a light-emitting active layer and a p-type GaN III-V group compound layer, the p-type GaN III-V group compound layer being connected to a p-type low-resistance ohm contact, and an n-type GaN III-V group compound layer being connected to an n-type low-resistance ohm contact to provide a forward bias. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A light-emitting diode (LED) device, comprising:
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a substrate;
a first semiconductor layer, formed on top of the substrate;
a plurality of trenches, formed in a part of area of the first semiconductor layer;
an insulating layer, formed in the trenches; and
an LED structure formed on the exposed surface of the first semiconductor layer;
where the LED structure being a light-emitting active layer and a p-type GaN III-V group compound layer, the p-type GaN III-V group compound layer being connected to a p-type low-resistance ohm contact, and an n-type GaN III-v group compound layer being connected to an n-type low-resistance ohm contact to provide a forward bias. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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Specification