Flip chip type nitride semiconductor light emitting device and manufacturing method thereof
First Claim
1. A flip chip type nitride semiconductor light emitting device comprising:
- a substrate for growing a nitride semiconductor material;
an n-type nitride semiconductor layer formed on the substrate;
an active layer formed on at least a part of the n-type nitride semiconductor layer;
a p-type nitride semiconductor layer formed on the active layer;
a bonding force providing layer formed on the p-type nitride semiconductor layer and adapted to provide a bonding force relative to the p-type nitride semiconductor layer;
a reflective electrode layer formed on the bonding force providing layer, and adapted to reflect light produced in the active layer toward the substrate and to diffuse electric current; and
a cap layer formed on the reflective electrode layer, and adapted to provide a bonding force between the reflective electrode layer and a bonding metal and to reduce contact resistance.
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Accused Products
Abstract
Disclosed herein are a flip chip type nitride semiconductor light emitting device, which comprises a substrate for growing a nitride semiconductor material, an n-type nitride semiconductor layer formed on the substrate, an active layer formed on at least a part of the n-type nitride semiconductor layer, a p-type nitride semiconductor layer formed on the active layer, a bonding force providing layer formed on the p-type nitride semiconductor layer and adapted to provide a bonding force relative to the p-type nitride semiconductor layer, a reflective electrode layer formed on the bonding force providing layer, and adapted to reflect light produced in the active layer toward the substrate and to diffuse electric current, and a cap layer formed on the reflective electrode layer, and adapted to provide a bonding force between the reflective electrode layer and a bonding metal and to reduce contact resistance.
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Citations
13 Claims
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1. A flip chip type nitride semiconductor light emitting device comprising:
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a substrate for growing a nitride semiconductor material;
an n-type nitride semiconductor layer formed on the substrate;
an active layer formed on at least a part of the n-type nitride semiconductor layer;
a p-type nitride semiconductor layer formed on the active layer;
a bonding force providing layer formed on the p-type nitride semiconductor layer and adapted to provide a bonding force relative to the p-type nitride semiconductor layer;
a reflective electrode layer formed on the bonding force providing layer, and adapted to reflect light produced in the active layer toward the substrate and to diffuse electric current; and
a cap layer formed on the reflective electrode layer, and adapted to provide a bonding force between the reflective electrode layer and a bonding metal and to reduce contact resistance. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of manufacturing a flip chip type nitride semiconductor light emitting device comprising the steps of:
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a) preparing a substrate for growing a nitride semiconductor material;
b) successively forming, on the substrate, an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer;
c) removing at least a part of the p-type nitride semiconductor layer and at least a part of the active layer so as to expose a partial region of the n-type nitride semiconductor layer;
d) forming a bonding force providing layer on the p-type nitride semiconductor layer so as to provide a bonding force relative to the p-type nitride semiconductor layer;
e) forming a reflective electrode layer on the bonding force providing layer so as to reflect light produced in the active layer toward the substrate, and to achieve diffusion of electric current; and
f) forming a cap layer on the reflective electrode layer so as to provide a bonding force between the reflective electrode layer and a bonding metal, and to reduce contact resistance. - View Dependent Claims (9, 10, 11, 12, 13)
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Specification