High frequency power amplifier circuit

• US 20050146379A1
• Filed: 12/30/2004
• Published: 07/07/2005
• Est. Priority Date: 01/05/2004
• Status: Active Grant

• Current Assignee: Murata Manufacturing Co Limited
• Original Assignee: Renesas Technology Corporation (Renesas Electronics Corporation)
• Inventors: Sugiyama, Hiroki, Soga, Takashi, Takahashi, Kyoichi, Tomono, Shuji, Shimamune, Yusuke, Furuya, Tomio
• Granted Patent: US 7,333,564 B2
• Time in Patent Office: Days
• US Class Current: 330/133
• CPC Class Codes: H03G 3/3042 in modulators, frequency-changers, transmitters or power amplifiers transmission power control in bidirectional transmission systems H04W52/04
• CPC Class Codes: H03G 3/3047 for intermittent signals, e.g. burst signals

Abstract

The present invention provides a high frequency power amplifier circuit capable of obtaining sufficient detection output even in a range where a request output power level is low and performing a desired output power control by a control loop with the detection output in a radio communication system which detects output power and performs feedback control. An output power detection circuit which detects the level of output power on the basis of an AC signal supplied from a final amplification stage of a high frequency power amplification circuit via a capacitive element has a circuit configuration such that in a state where the output power control voltage is lower than a certain level, current (Isu) according to the output power control voltage is generated and supplied to the output power detection circuit, and detection sensitivity of the output power detection circuit improves according to the current.

Claims

1. A high frequency power amplifier circuit comprising:

a power amplifying circuit which amplifies a high frequency signal in accordance with an output power control voltage; and

an output power detection circuit which detects a level of an output power of the power amplifying circuit,

wherein in a state where said output power control voltage is lower than a predetermined level, said output power detection circuit generates output voltage on the basis of the output power control voltage, and in a state where the output power control voltage is higher than the predetermined level, said output power detection circuit generates the output voltage on the basis of the level of the output power of the power amplifying circuit detected by said output power detection circuit.

2. The high frequency power amplifier circuit according to claim 1, further comprising a current generating circuit for increasing sensitivity which generates current according to said output power control voltage, supplies the generated current to a detector in said output power detection circuit to improve detection sensitivity in a state where said output power control voltage is lower than the predetermined level.

3. The high frequency power amplifier circuit according to claim 2,

said output power detection circuit comprising:

a first transistor having a control terminal to which an alternate current signal supplied from an output part of said power amplifier circuit via a coupling capacitor is applied;

a second transistor connected in series to the first transistor;

a third transistor connected to the second transistor so as to form a current mirror circuit; and

a transistor for current-voltage conversion which is connected in series to the third transistor,

wherein the current generated by said current generating circuit for increasing sensitivity flows to said transistor for current-voltage conversion.

4. The high frequency power amplifier circuit according to claim 3, further comprising:

a bias generating circuit for giving an operation point to the control terminal of said first transistor; and

a subtraction circuit for outputting, as a detection signal, voltage according to the difference between voltage obtained by conversion of said transistor for current-voltage conversion and voltage applied to said first transistor by said bias generating circuit.

5. The high frequency power amplifier circuit according to claim 2,

said current generating circuit for increasing sensitivity comprising:

a constant current generating circuit for generating offset current of predetermined magnitude on the basis of reference voltage;

a variable current generating circuit for generating current proportional to the output power control voltage when the control voltage is equal to or higher than a predetermined level on the basis of said offset current and the output power control voltage; and

a current combining circuit for combining the current generated by the variable current generating circuit with the reference current and outputting current which changes according to a desired characteristic.

6. The high frequency power amplifier circuit according to claim 1, wherein said power amplifier circuit includes a transistor for amplification for amplifying an input high frequency signal, and a bias circuit for applying bias according to said output power control voltage to the control terminal of the transistor for amplification.

7. The high frequency power amplifier circuit according to claim 6, further comprising a control voltage generating circuit for generating said output power control voltage to be supplied to said bias circuit on the basis of the output voltage from said output power detecting circuit and an output level instruction signal supplied from the outside.

8. A high frequency power amplifier circuit comprising:

a power amplifying circuit which includes an amplification transistor for amplifying an input high frequency signal and amplifies a high frequency signal in accordance with output power control voltage;

an output power detection circuit which detects a level of an output power of the power amplifying circuit; and

a bias circuit which gives bias voltage according to said output power control voltage to a control terminal of said amplification transistor,

wherein in a state where said output power control voltage is lower than a predetermined level, said output power detection circuit generates an output voltage on the basis of the bias voltage at the control terminal of said amplification transistor, and in a state where said output power control voltage is higher than the predetermined level, said output power detection circuit generates the output voltage on the basis of the level of the output power of the power amplifying circuit detected by said output power detection circuit.

9. The high frequency power amplifier circuit according to claim 8, wherein said bias circuit takes the form of a resistive dividing circuit which divides said output power control voltage at a resistance ratio, thereby generating bias voltage to be applied to the control terminal of said amplification transistor.

10. The high frequency power amplifier circuit according to claim 8,

said bias circuit comprising:

a voltage-current converter which converts said output power control voltage to current;

a transistor for bias to which said amplification transistor and the control terminal are commonly connected; and

a bias current generator which generates a bias current proportional to current obtained by conversion of said voltage-current converter,

wherein the bias current generated by said bias current generator is made to flow to said transistor for bias, thereby making flow operation current according to said output power control voltage to said amplification transistor.

11. The high frequency power amplifier circuit according to claim 10, further comprising a control voltage generating circuit which generates said output power control voltage to be supplied to said bias circuit on the basis of the output voltage from said output power detection circuit and an output level instruction signal supplied from the outside.

12. The high frequency power amplifier circuit according to claim 8, wherein said output power detection circuit comprises a detection transistor which receives the bias voltage at the control terminal of said amplification transistor by the control terminal and makes current according to the bias voltage flow, and the transistor for detection is a transistor having the same structure as that of said amplification transistor and formed by the same process as that of said amplification transistor.