Process for producing light-emitting semiconductor device

• US 20050148105A1
• Filed: 12/17/2004
• Published: 07/07/2005
• Est. Priority Date: 12/19/2003
• Status: Active Grant

• Current Assignee: Nitto Denko Corporation
• Original Assignee: Nitto Denko Corporation
• Inventors: Hotta, Yuji, Harada, Noriaki, Suehiro, Ichirou, Sadayori, Naoki
• Granted Patent: US 7,189,591 B2
• Time in Patent Office: Days
• US Class Current: 438/22
• CPC Class Codes: B29C 43/021 characterised by the shape of the surface
• CPC Class Codes: B29C 43/203 Making multilayered articles
• CPC Class Codes: B29L 2011/00 Optical elements, e.g. lenses, prisms
• CPC Class Codes: B29L 2011/0016 Lenses
• CPC Class Codes: C08G 18/025 the polymeric products containing carbodiimide groups
• CPC Class Codes: C08G 18/71 Monoisocyanates or monoisothiocyanates
• CPC Class Codes: C08G 18/7607 Compounds of C08G18/7614 and of C08G18/7657
• CPC Class Codes: C09D 175/00 Coating compositions based on polyureas or polyurethanes; Coating compositions based on derivatives of such polymers
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

The invention provides a process for producing a light-emitting semiconductor device, which comprises: (1) forming a polycarbodiimide-containing layer on a light takeout side of a light-emitting semiconductor element; and (2) forming irregularities on the surface of the polycarbodiimide-containing layer.

Claims

1. A process for producing a light-emitting semiconductor device, which comprises:

(1) forming a polycarbodiimide-containing layer on a light takeout side of a light-emitting semiconductor element; and

(2) forming irregularities on the surface of the polycarbodiimide-containing layer.

2. The process for producing a light-emitting semiconductor device of claim 1, wherein the polycarbodiimide-containing layer contains a polycarbodiimide represented by general formula (1):

R¹—

N═

C═

N

R—

N═

C═

N

_nR¹  

 

(1)

wherein R represents a diisocyanate residue, R¹ represents a monoisocyanate residue, and n is an integer of 1 to 100.

3. The process for producing a light-emitting semiconductor device of claim 1, wherein the polycarbodiimide-containing layer before the formation of surface irregularities has a thickness of 0.5 to 10 μ

m.

4. The process for producing a light-emitting semiconductor of claim 1, wherein the polycarbodiimide-containing layer has a refractive index of 1.7 or higher.

5. The process for producing a light-emitting semiconductor of claim 1, wherein the polycarbodiimide-containing layer has a modulus of elasticity at 150°

C. of 0.2 to 3 GPa.

6. The process for producing a light-emitting semiconductor of claim 1, wherein the formation of the irregularities is carried out by pressing the polycarbodiimide-containing layer with a die having irregularities under application of heat.

7. The process for producing a light-emitting semiconductor of claim 1, wherein the irregularities comprise protrusions having a height of 1 to 5 μ

m.

8. The process for producing a light-emitting semiconductor of claim 7, wherein the protrusions each have a semispherical shape.