Method for producing a luminescence diode chip
First Claim
1. A method for producing a luminescence diode chip, comprising:
- providing a semiconductor body having an epitaxially grown semiconductor layer sequence having an active zone and a radiation coupling-out area, the active zone emitting an electromagnetic radiation during operation of the luminescence diode, which electromagnetic radiation, at least in part, is coupled out via the radiation coupling-out area; and
providing a radiation-transmissive covering body having a first main area, a second main area opposite to the first main area, and also side areas connecting the first and second main areas; and
applying the covering body to the radiation coupling-out area such that the first main area faces the radiation coupling-out area, the application of the covering body being preceded by the application of a first conversion layer, having a luminescence conversion material, to the first and/or the second main area of the covering body.
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Abstract
A method for producing a luminescence diode chip, in which provision is made of a semiconductor body is provided having an epitaxially grown semiconductor layer sequence having an active zone and a radiation coupling-out area, the active zone emitting an electromagnetic radiation during operation of the luminescence diode, a large part of said electromagnetic radiation being coupled out via the radiation coupling-out area. A luminescence conversion material is arranged downstream of the radiation coupling-out area in an emission direction of the semiconductor body. A radiation-transmissive covering body having a first main area, a second main area opposite to the first main area, and also side areas connecting the first and second main areas. The covering body is applied to the radiation coupling-out area of the semiconductor layer sequence in such a way that the first main area faces the radiation coupling-out area. The application of the covering body is preceded by the application of a first conversion layer, having a luminescence conversion material, to the first main area of the covering body.
32 Citations
16 Claims
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1. A method for producing a luminescence diode chip, comprising:
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providing a semiconductor body having an epitaxially grown semiconductor layer sequence having an active zone and a radiation coupling-out area, the active zone emitting an electromagnetic radiation during operation of the luminescence diode, which electromagnetic radiation, at least in part, is coupled out via the radiation coupling-out area; and
providing a radiation-transmissive covering body having a first main area, a second main area opposite to the first main area, and also side areas connecting the first and second main areas; and
applying the covering body to the radiation coupling-out area such that the first main area faces the radiation coupling-out area, the application of the covering body being preceded by the application of a first conversion layer, having a luminescence conversion material, to the first and/or the second main area of the covering body. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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Specification