Manufacturing method of thin film integrated circuit device and manufacturing method of non-contact type thin film integrated circuit device

• US 20050148121A1
• Filed: 12/09/2004
• Published: 07/07/2005
• Est. Priority Date: 12/19/2003
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Takayama, Toru, Yamazaki, Shunpei, Kanno, Yohei
• Granted Patent: US 7,271,076 B2
• Time in Patent Office: Days
• US Class Current: 438/149
• CPC Class Codes: G06K 19/0704 the battery being rechargeable, e.g. solar batteries
• CPC Class Codes: G06K 19/0723 the record carrier comprising an arrangement for non-contact communication, e.g. wireless communication circuits on transponder cards, non-contact smart cards or RFIDs
• CPC Class Codes: G06K 19/07703 the interface being visual
• CPC Class Codes: G06K 19/07718 the record carrier being manufactured in a continuous process, e.g. using endless rolls
• CPC Class Codes: G06K 19/07745 Mounting details of integrated circuit chips
• CPC Class Codes: G06K 19/07749 the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
• CPC Class Codes: G06K 19/0775 arrangements for connecting the integrated circuit to the antenna
• CPC Class Codes: G06K 19/07758 arrangements for adhering the record carrier to further objects or living beings, functioning as an identification tag
• CPC Class Codes: G06K 19/07779 the inductive antenna being a coil
• CPC Class Codes: G06K 19/07781 the coil being fabricated in a winding process
• CPC Class Codes: G06K 19/07783 the coil being planar
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/68318 Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
• CPC Class Codes: H01L 2221/68359 used as a support during manufacture of interconnect decals or build up layers
• CPC Class Codes: H01L 2221/68368 used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48 of an individual wire connector
• CPC Class Codes: H01L 2224/49171 Fan-out arrangements
• CPC Class Codes: H01L 23/49855 for flat-cards, e.g. credit cards cards per se G06K19/00
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00011 : Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/12044 : OLED
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/3011 : Impedance

Abstract

With non-contact and contact IC chips becoming common, it is necessary to mass-produce enormous amount of IC chips, which are utilizable for human beings, animals and plants, commercial products, banknotes, and the like, at low cost. For example, it is necessary to manufacture IC chips to be applied to commercial products, banknotes, and the like at a cost of 1 to several yen per IC chip, preferably, at a cost less than 1 yen, and it is desired to realize a structure of an IC chip that can be mass-produced at low cost and a manufacturing process of the IC chip. A method of-manufacturing a thin film integrated circuit device according to the present invention includes steps of forming a peel-off layer over a thermally oxidized silicon substrate, forming a plurality of thin film integrated circuit devices over the peel-off layer with a base film interposed therebetween, forming a groove between the plurality of thin film integrated circuit devices, and separating the plurality of thin film integrated circuit devices by introducing one of a gas and a liquid including halogen fluoride into the groove to remove the peel-off layer.

Claims

1. A method of manufacturing a thin film integrated circuit device comprising:

forming a peel-off layer over a semiconductor substrate having an oxide surface;

forming a plurality of thin film integrated circuit devices over the peel-off layer with a base film interposed therebetween;

forming a groove in a boundary region between the plurality of thin film integrated circuit devices; and

separating the plurality of thin film integrated circuit devices by introducing one of a gas or a liquid including halogen fluoride into the groove to remove the peel-off layer.

7. The method according to claim 1, wherein the groove is formed by one of linear laser scribing, dicing, and etching with an insulating film as a mask.

11. The method according to claim 1, wherein one of a heat-resistant insulating film and a heat-resistant tape is formed over the plurality of the thin film integrated circuit devices.

15. The method according to claim 11, wherein the heat-resistant insulating film comprises a material having a skeleton formed by a bond of silicon and oxygen and including at least hydrogen as a substituent or at least one selected from the group consisting of fluoride, an alkyl group, and aromatic hydrocarbon as the substituent.

19. The method according to claim 1, wherein the peel-off layer includes silicon as its main component.

21. The method according to claim 1, wherein the base film includes one of silicon oxide, silicon nitride, and silicon oxynitride.

25. The method according to claim 1, wherein the halogen fluoride is ClF₃ (chlorine trifluoride).

2. A method of manufacturing a thin film integrated circuit device comprising:

forming a peel-off layer over a semiconductor substrate with an oxide surface;

forming a plurality of thin film integrated circuit devices over the peel-off layer with a base film interposed therebetween;

forming a groove in a boundary region between the plurality of thin film integrated circuit devices;

temporarily bonding a jig to upper portions of the plurality of thin film integrated circuit devices;

separating the plurality of thin film integrated circuit devices by introducing one of a gas and a liquid including halogen fluoride into the groove to remove the peel-off layer; and

removing the jig bonded to the plurality of thin film integrated circuit devices.

5. The method according to claim 2, wherein the jig is bonded with an adhesive material which has adhesive force to be reduced or lost by UV light.

8. The method according to claim 2, wherein the groove is formed by one of linear laser scribing, dicing, and etching with an insulating film as a mask.

12. The method according to claim 2, wherein one of a heat-resistant insulating film and a heat-resistant tape is formed over the plurality of the thin film integrated circuit devices.

16. The method according to claim 12, wherein the heat-resistant insulating film comprises a material having a skeleton formed by a bond of silicon and oxygen and including at least hydrogen as a substituent or at least one selected from the group consisting of fluoride, an alkyl group, and aromatic hydrocarbon as the substituent.

20. The method according to claim 2, wherein the peel-off layer includes silicon as its main component.

22. The method according to claim 2, wherein the base film includes one of silicon oxide, silicon nitride, and silicon oxynitride.

26. The method according to claim 2, wherein the halogen fluoride is ClF₃ (chlorine trifluoride).

3. A method of manufacturing a thin film integrated circuit device comprising:

forming a plurality of thin film integrated circuit devices over a SOI substrate including an upper single-crystal silicon layer, a layer including one of silicon oxide and silicon nitride, and a lower single-crystal silicon layer;

forming a groove in a boundary region between the plurality of thin film integrated circuit devices; and

separating the plurality of thin film integrated circuit devices by introducing one of a gas and a liquid including halogen fluoride into the groove to etch at least a surface of the lower single-crystal silicon layer near the thin film integrated circuit devices.

9. The method according to claim 3, wherein the groove is formed by one of linear laser scribing, dicing, and etching with an insulating film as a mask.

13. The method according to claim 3, wherein one of a heat-resistant insulating film and a heat-resistant tape is formed over the plurality of the thin film integrated circuit devices.

17. The method according to claim 13, wherein the heat-resistant insulating film comprises a material having a skeleton formed by a bond of silicon and oxygen and including at least hydrogen as a substituent or at least one selected from the group consisting of fluoride, an alkyl group, and aromatic hydrocarbon as the substituent.

23. The method according to claim 3, wherein the base film includes one of silicon oxide, silicon nitride, and silicon oxynitride.

27. The method according to claim 3, wherein the halogen fluoride is ClF₃ (chlorine trifluoride).

4. A method of manufacturing a thin film integrated circuit device comprising:

forming a plurality of thin film integrated circuit devices over a SOI substrate including an upper single-crystal silicon layer, a layer including one of silicon oxide and silicon nitride, and a lower single-crystal silicon layer;

forming a groove in a boundary between the plurality of thin film integrated circuit devices;

temporarily bonding a jig to upper portions of the plurality of thin film integrated circuit devices;

separating the plurality of thin film integrated circuit devices by introducing one of a gas and a liquid including halogen fluoride into the groove to etch at least a surface of the lower single-crystal silicon layer near the thin film integrated circuit devices; and

removing the jig bonded to the plurality of thin film integrated circuit devices.

6. The method according to claim 4, wherein the jig is bonded with an adhesive material which has adhesive force to be reduced or lost by UV light.

10. The method according to claim 4, wherein the groove is formed by one of linear laser scribing, dicing, and etching with an insulating film as a mask.

14. The method according to claim 4, wherein one of a heat-resistant insulating film and a heat-resistant tape is formed over the plurality of the thin film integrated circuit devices.

18. The method according to claim 14, wherein the heat-resistant insulating film comprises a material having a skeleton formed by a bond of silicon and oxygen and including at least hydrogen as a substituent or at least one selected from the group consisting of fluoride, an alkyl group, and aromatic hydrocarbon as the substituent.

24. The method according to claim 4, wherein the base film includes one of silicon oxide, silicon nitride, and silicon oxynitride.

28. The method according to claim 4, wherein the halogen fluoride is ClF₃ (chlorine trifluoride).

29. A method of manufacturing a non-contact type thin film integrated circuit device comprising:

forming a peel-off layer over a semiconductor substrate with an oxide surface;

forming a plurality of thin film integrated circuit devices over the peel-off layer with a base film interposed therebetween;

forming a groove in a boundary region between the plurality of thin film integrated circuit devices;

separating the plurality of thin film integrated circuit devices by introducing one of a gas or a liquid including halogen fluoride into the groove to remove the peel-off layer; and

forming an antenna around the separated thin film integrated circuit device.

31. The method according to claim 29, wherein the halogen fluoride is ClF₃ (chlorine trifluoride).

33. The method according to claim 29, wherein the antenna includes one element selected from of the group consisting of Ag, Au, Al, Cu, Zn, Sn, Ni, Cr, Fe, Co, and Ti.

35. The method according to claim 29, wherein the antenna is formed over a flexible substrate.

37. A non-contact type ID tag comprising the non-contact type thin film integrated circuit device according to claim 29.

39. A non-contact type ID card comprising the non-contact type thin film integrated circuit device according to claim 29.

30. A method of manufacturing a non-contact type thin film integrated circuit device comprising:

forming a plurality of thin film integrated circuit devices over a SOI substrate including an upper single-crystal silicon layer, a layer including one of silicon oxide and silicon nitride, and a lower single-crystal silicon layer;

forming a groove between the plurality of thin film integrated circuit devices;

separating the plurality of thin film integrated circuit devices by introducing one of a gas and a liquid including halogen fluoride into the groove to etch at least a surface of the lower single-crystal silicon layer near the thin film integrated circuit devices; and

forming an antenna around the separated thin film integrated circuit device.

32. The method according to claim 30, wherein the halogen fluoride is ClF₃ (chlorine trifluoride).

34. The method according to claim 30, wherein the antenna includes one element selected from of the group consisting of Ag, Au, Al, Cu, Zn, Sn, Ni, Cr, Fe, Co, and Ti.

36. The method according to claim 30, wherein the antenna is formed over a flexible substrate.

38. A non-contact type ID tag comprising the non-contact type thin film integrated circuit device according to claim 30.

40. A non-contact type ID card comprising the non-contact type thin film integrated circuit device according to claim 30.